TZS4678~TZS4713
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristic
3. Zener voltage 1.8V to 30V
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
-65~+200
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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Rev. 3e, 1-Nov-2006
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TZS4678~TZS4713
Zener voltage V
Z
@ I
ZT
=50μA
V
Znom1)
V
ZMin
V
ZMax
V
V
V
TZS4678
1.8
1.71
1.89
TZS4679
2
1.9
2.1
TZS4680
2.2
2.09
2.31
TZS4681
2.4
2.28
2.52
TZS4682
2.7
2.565
2.835
TZS4683
3
2.85
3.15
TZS4684
3.3
3.135
3.465
TZS4685
3.6
3.42
3.78
TZS4686
3.9
3.705
4.095
TZS4687
4.3
4.085
4.515
TZS4688
4.7
4.465
4.935
TZS4689
5.1
4.845
5.355
TZS4690
5.6
5.32
5.88
TZS4691
6.2
5.89
6.51
TZS4692
6.8
6.46
7.14
TZS4693
7.5
7.125
7.875
TZS4694
8.2
7.79
8.61
TZS4695
8.7
8.265
9.135
TZS4696
9.1
8.645
9.555
TZS4697
10
9.5
10.5
TZS4698
11
10.45
11.55
TZS4699
12
11.4
12.6
TZS4700
13
12.35
13.65
TZS4701
14
13.3
14.7
TZS4702
15
14.25
15.75
TZS4703
16
15.20
16.8
TZS4704
17
16.15
17.85
TZS4705
18
17.10
18.9
TZS4707
20
19
21
TZS4711
27
25.65
28.35
TZS4713
30
28.5
31.5
1)
Tolerance and voltage designation(Vz):
for
±1%.
2)
Type
1)
I
R
μA
7.5
5
4
2
1
0.8
7.5
7.5
5
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
at
V
R3)
V
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
15.2
20.4
22.8
I
ZM2)
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29
27.4
26.2
24.8
21.6
20.4
19
17.5
16.3
15.4
14.5
13.2
11.9
8.8
7.9
ΔV
Z4)
V
0.7
0.7
0.75
0.8
0.85
0.9
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.9
0.75
0.5
0.1
0.08
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.2
0.27
0.3
The type numbers shown have a standard tolerance of
±5%
on the nominal zener voltage, C for
±2%,
D
Maximum zener current ratings(I
ZM
):
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC
250 mW rating.
3)
Reverse leakage current(I
R
):
Reverse leakage currents are guaranteed and measured at V
R
as shown on the table.
Maximum voltage change(ΔV
Z
):
Voltage change is equal to the difference between V
Z
at 100μA and V
Z
at 10μA.
4)
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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TZS4678~TZS4713
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1.
Typical Thermal Resistance
Figure 2. Typical Forward Characteristics
Figure 3. Temperature coefficients
(-55℃ to +150℃ temperature range; 90% of the units are in the ranges indicated.)
Figure 4. Effect of zener current on zener impedance
Figure 5. Effect of zener voltage on zener impedance
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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TZS4678~TZS4713
Figure 6. Zener Voltage versus Zener Current – Vz=1 thru 16 Volts
Figure 7. Zener Voltage versus Zener Current – Vz=15 thru 30 Volts
Excel Semiconductor
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Rev. 3e, 1-Nov-2006
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TZS4678~TZS4713
Figure 8. Zener Voltage versus Zener Current – Vz=30 thru 75 Volts
Dimensions in mm
Cathode identification
1.7
Glass
0.3
3.5±0.2
Glass Case
Quadro MELF
Similar to JEDEC DO-213 AA
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
5/5
Φ1.5±0.1
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