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UF1000CT_09

10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

器件类别:半导体    分立半导体   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

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UF1000CT~UF1006CT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
50 to 600 Volts
CURRENT
10.0 Amperes
MECHANCALDATA
• Case: TO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
U F 1 0 0 0 C T U F 1 0 0 1 C T U F 1 0 0 2 C T U F 1 0 0 3 C T U F 1 0 0 4 C T U F 1 0 0 6 C T
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
C
J
t
rr
R
θ
J C
T
J
, T
S T G
60
50
2
-5 5 to +1 5 0
1 .0
1 .0
500
40
100
O
50
35
50
100
70
100
200
140
200
10
125
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1 .3 0
1 .7 0
V
µ
A
pF
ns
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.05.2009
PAGE . 1
UF1000CT~UF1006CT
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT, AMPERES
12.5
JUNCTION CAPACITANCE, pF
180
10.0
7.5
5.0
2.5
0
0
150
O
150
120
90
60
30
600-800V
50-400V
T
J
= 25 C
O
0
50
100
1
2
5
10
20
50 100 200
500
CASE TEMPERATURE, C
REVERSE VOLTAGE, VOLTS
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.2 TYPICAL JUNCTION CAPACITANCES
1000
100
300-400V
INSTANTANEOUS REVERSE CURRENT,uA
INSTANTANEOUS FORWARD CURRENT,
Amperes
10
50-200V
100
T
J
= 125 C
O
600V
1
10
0.1
1.0
T
J
= 25 C
O
T
J
= 25 C
0.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
O
0.1
20
40
60
80
100
120
1 40
FORWARD VOLTAGE, volts
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
Fig.3 FORWARD CHARACTERISTICS
Fig.4 TYPICAL REVERSE CHARACTERISTICS
FORWARD SURGE CURRENT,AMPERES
175
150
125
100
75
50
25
1
10
100
NO. OF CYCLES AT 60Hz
Fig.5 PEAK FORWARD SURGE CURRENT
STAD-MAR.05.2009
PAGE . 2
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