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US1006FL

1 A, 600 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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US1001FL
THRU
US1008FL
1 Amp
Ultra
Fast Recovery
Features
Low Cost
Ultra fast Recovery
High Reliability
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Recovery
Silicon Rectifier
50 to
1000
Volts
SOD-123FL
A
B
Maximum Ratings
Operating Temperature: -65 C to +150 C
Storage Temperature: -65 C to +150 C
Maximum Thermal Resistance;
180
C/W Junction To Ambient.
MCC
Part
Number
US1001FL
US1002FL
US1003FL
US1004FL
US1006FL
US1007FL
US1008FL
Device
Marking
U1
U2
U3
U4
U5
U6
U7
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
C
E
H
D
G
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
US1001FL-03FL
US1004FL
US1006FL-08L
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
US1001L-03FL
US1004FL
US1006L-07L
US1008FL
Typical Junction
Capacitance
I
F(AV)
I
FSM
1.0A
30A
T
L
=
90
C
8.3ms, half sine
DIM
A
B
C
D
E
G
H
V
F
1.0V
1.40V
1.70V
2
A
20
A
I
FM
= 1.0A;
T
a
= 25 C
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
.037
.053
0.95
1.35
.020
.039
0.50
1.00
.010
-----
0.25
-----
-----
.008
----
.20
SUGGESTED SOLDER
PAD LAYOUT
NOTE
I
R
Ta = 25 C
Ta = 125 C
0.093”
0.048”
T
rr
35ns
50ns
75ns
100ns
20pF
I
F
=
0.5A,I
R
=1.0A,
T
rr
=
0.25Α
0.036”
C
J
Measured at
1.0MHz, V
R
=4.0V
US1001FL THRU US1008FL
Figure 1
Typical Forward Characteristics
20
10
6
4
2
Amps
1
.6
.4
.2
T
J
=25°C
.1
.06
.04
.02
.01
.8
1.0
1.2
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
1.4
1.6
1.8
2.4
2.2
2.0
1.8
1.6
1.4
US1001FL-03FL
US1004FL
Figure 2
Forward Derating Curve
US1006-08FL
1.2
Amps
1.0
.8
.6
.4
Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
0
0
25
50
75
°C
Average Forward Rectified Current - Amperes
versus
Lead Temperature -°C
100
125
150
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
US1006FL-US1008FL
T
J
=25°C;
f=1MHZ
US1001FL-US1004FL
Junction Capacitance - pFversus
Reverse Voltage - Volts
Figure 4
Peak Forward Surge Current
30
25
20
15
Amps
10
5
0
1
4
6
8 10
Cycles
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
20
40
60 80 100
2
Figure 5
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
t
rr
+0.5A
0
25Vdc
Pulse
Generator
Note 2
1Ω
Oscilloscope
Note 1
-0.25
-1.0
1cm
Set Time Base for 20/100ns/cm
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
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