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US1J

surface mount ultrafast rectifier(voltage - 50 to 800 volts current - 1.0 ampere)

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
DO-214AC
包装说明
ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.7 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.1 µs
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
US1A THRU US1K
SURFACE MOUNT ULTRAFAST RECTIFIER
VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
l
l
l
l
l
l
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Glass passivated junction
High temperature soldering:
260
¢J
/10 seconds at terminals
SMA/DO-214AC
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
¢J
ambient temperature unless otherwise specified.
Resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
US1A
US1B
US1D
US1G
US1J
US1K
UNITS
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T
L
=100
¢J
Peak Forward Surge Current 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
T
A
=55
¢J
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current T
A
=25
¢J
At Rated DC Blocking Voltage T
A
=100
¢J
Maximum Reverse Recovery Time (Note 1) T
J
=25
¢J
Typical Junction capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating and Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
800
560
800
Amps
Amps
30.0
V
F
I
R
T
RR
C
J
R
£KJL
T
J
,T
STG
1.0
10.0
100
50.0
1.4
1.7
Volts
£g
A
nS
P
F
¢J
/W
¢J
100.0
17
30
-50 to +150
NOTES:
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm
2
(.013mm thick) land areas
RATING AND CHARACTERISTIC CURVES
US1A THRU US1K
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
TYPICAL
TJ = 25
¢J
US1A
1.0
AVERAGE FORWARD CURRENT,
AMPERES
IFM, Apk
2.0
US1G
0.1
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
US1K
.01
0
.
2
.4
.
6
25
.8
1.0 1.2
1.4
50
75 100 125 150 175
LEAD TEMPERATURE,
¢J
Fig. 2-FORWARD CHARACTERISTICS
100
Fig. 3-FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
AMPERES
30
25
20
15
10
5
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
JUNCTION CAPACITANCE, pF
TJ = 25
¢J
f = 1.0MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
1
2
5
10
20
50
100
REVERSE VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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