首页 > 器件类别 > 分立半导体 > 超快恢复二极管

US1J-A

反向恢复时间(trr):75ns 直流反向耐压(Vr):600V 平均整流电流(Io):1A 正向压降(Vf):1.7V @ 1A VR=600V IO=1A VF=1.7V@1A

器件类别:分立半导体    超快恢复二极管   

厂商名称:台湾美丽微(FMS)

厂商官网:http://www.formosagr.com/

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器件参数
参数名称
属性值
反向恢复时间(trr)
75ns
直流反向耐压(Vr)
600V
平均整流电流(Io)
1A
正向压降(Vf)
1.7V @ 1A
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SURFACE MOUNT HIGH EFFCIENCY RECTIFIER
US1A-A THRU US1M-A
1.0A Surface Mount High
Effciency Rectifiers-50-1000V
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
Compliant to RoHS Directive 2011/65/EU
Suffix"-H" indicates Halogen-free part,ex.US1M-A-H
Formosa MS
Package outline
SMA/DO-214AC
0.067 (1.70)
0.051 (1.30)
0.108(2.75)
0.096(2.45)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
Mechanical data
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.002
ounce, 0.07 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
R
θJA
C
J
T
STG
-65
50
15
+150
MIN.
TYP.
MAX.
1.0
30
5.0
50
O
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
A
= 25
O
C
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
NOTE 1
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
200
400
600
800
1000
μA
C/W
pF
O
C
SYMBOLS
US1A-A
US1B-A
US1D-A
US1G-A
US1J-A
US1K-A
US1M-A
V
RMS
*2
(V)
35
70
140
280
420
560
700
*3
V
R
(V)
50
100
200
400
600
800
1000
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
1.00
50
1.40
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=1.0A
1.70
75
*5 Maximum Reverse recovery time, note 2
Note:
1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
2. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.cn
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
FM-3030004
SURFACE MOUNT HIGH EFFCIENCY RECTIFIER
US1A-A THRU US1M-A
Rating and characteristic curves
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
Formosa MS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
£PEAK FORWARD SURGE CURRENT,
AMPERES
30
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
1,000
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
100
1
TJ=100 C
10
0.1
US1A-A-US1D-A
US1G-A
US1J-A-US1M-A
0.01
0.2
0.6
1.0
1.4
1.8
2.0
1
TJ=25 C
0.1
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
100
JUNCTION CAPACITANCE, pF
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
http://www.formosams.cn
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 2
FM-3030004
SURFACE MOUNT HIGH EFFCIENCY RECTIFIER
US1A-A THRU US1M-A
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
2
1
2
1
Marking
Type number
US1A-A
US1B-A
US1D-A
US1G-A
US1J-A
US1K-A
US1M-A
Marking code
US1A
US1B
US1D
US1G
US1J
US1K
US1M
For
Halogen D evice
Example
For
Halogen-free Device
LOGO
LOGO
FMS
US1M
Marking code
FMS
US1M-H
Marking code
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA
A
0.110 (2.80)
B
0.063 (1.60)
C
0.087 (2.20)
http://www.formosams.cn
TEL:886-755-27188611
FAX:886-755-27188568
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 3
FM-3030004
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