d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
e. In this document, any reference to the
Case
represents the body of the
DFN2X2
device and
Foot
is the bump.
1
VBQF2120
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 72 °C/W.
Steady State
Symbol
R
thJA
R
thJF
Typical
31
13
Maximum
42
16
www.VBsemi.com
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 4
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
V
GS
= - 0.1 V, f = 1 MHz
V
DS
= - 6 V, V
GS
= - 5 V, I
D
= - 1 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 1 A
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
2220
865
555
38
35
7.3
5.9
28
14
25
380
240
21
40
570
360
ns
57
53
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= 5 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5
V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1 A
V
GS
= - 2.5 V, I
D
= - 1 A
V
GS
= - 1.8 V, I
D
= - 1 A
V
DS
= - 4 V, I
D
= - 1 A
- 20
0.015
0.021
0.023
8.3
S
- 0.5
- 12
- 13.3
2.4
- 1.5
- 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
2
VBQF2120
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1 A, V
GS
= 0 V
Test Conditions
T
C
= 25 °C
Min.
Typ.
-
8
- 25
- 0.65
311
1.136
116
195
- 1.2
467
1.705
Max.
Unit
Drain-Source Body Diode Characteristics
A
V
ns
µC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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