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WAS4735Q

WAS4735Q 数据 模拟开关芯片

器件类别:电源管理   

厂商名称:韦尔(WILLSEMI)

厂商官网:http://www.willsemi.com/

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WAS4735Q
WAS4735Q
4:1 High speed (-3dB bandwidth 1.2GHz) Switch
Http//:www.sh-willsemi.com
Descriptions
The WAS4735Q is a bi-directional, low power,
high-speed 4:1 switch that operates from a single
+2.3V to +5.5V power supply.
The
WAS4735Q
is
designed
for
switching
of
QFN1826-16L
D1- D1+ D2+ D2-
D0+ 13
D0- 14
/OE 15
NC 16
1
2
3
4
12
11
10
9
8
D3+
high-speed
(-3dB bandwidth 1.2GHz)
signals in
handset and consumer applications, such as cell
phones, digital cameras, and notebooks with hubs or
controllers with limited USB I/Os.
The WAS4735Q has low bit-to-bit skew and high
channel-to-channel noise isolation, and is compatible
with various standards, such as high-speed USB 2.0
(480Mbps), MHL video 720p/60fps and 1080i/30fps.
Each switch is bi-directional and offers little attenuation
of the high-speed signals at the outputs. Its bandwidth
is quite marginal to pass high-speed differential signals
(2.4Gbps) with good signal integrity.
The WAS4735Q is featured with special circuitry on
the D+/D-, which allows the device to withstand a
VBUS short to D+ or D- when the USB devices are
either powered off or on.
The WAS4735Q is available in QFN1826-16L package.
Standard products are Pb-Free and halogen-Free.
7 D3-
6
SEL0
5 SEL1
GND D+ D- Vcc
Pin configuration (Top view)
DF*
Marking
DF = Device code
*
= Month (A~Z)
Order information
Applications
Cell phones
MID
Router
Other electronics equipments
Device
WAS4735Q-16/TR
Package
QFN1826-16L
Shipping
3000/Reel&Tape
Features
Supply voltage
-3dB Bandwidth
Off isolation
Crosstalk
: 2.3 ~ 5.5V
: 1.2GHz @ C
L
=0pF
: -50dB @ 250MHz
: -30dB @ 250MHz
Low quiescent current : 60uA typical
Will Semiconductor Ltd.
1
Jun, 2014 - Rev. 1.1
WAS4735Q
Pin descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
GND
D+
D-
Vcc
SEL1
SEL0
D3-
D3+
D2-
D2+
D1+
D1-
D0+
D0-
/OE
NC
Ground
D+ Common Port (HS or FS USB)
D- Common Port (HS or FS USB)
Power Supply
Path Selection Control Input (See Table Below)
Path Selection Control Input (See Table Below)
D- From Fourth Source Path (HS or FS USB)
D+ From Fourth Source Path (HS or FS USB)
D- From Third Source Path (HS or FS USB)
D+ From Third Source Path (HS or FS USB)
D+ From Second Source Path (HS or FS USB)
D- From Second Source Path (HS or FS USB)
D+ From First Source Path (HS or FS USB)
D- From First Source Path (HS or FS USB)
Enable Control Input (See Table Below)
No Connect
Descriptions
Function descriptions
SEL0
/OE
SEL1
1
0
0
0
0
X
0
0
1
1
X
0
1
0
1
D+,D- Switch Paths Open
D+ = D0+, D- = D0-
D+ = D1+, D- = D1-
D+ = D2+, D- = D2-
D+ = D3+, D- = D3-
Function
Logic symbol and typical applications
D0+
D1+
D2+
D3+
D0-
D1-
D2-
D3-
4G
Processor
D+
USB #0
USB Port
WAS4735Q
Vbus
D+
D-
2G
modem
D-
USB #1
Application
Processor
3G
Processor
USB #2
4:1
MUX
GND
USB #3
SEL1
SEL0
Control
/OE
Logic Symbol
Typical Applications (Mobile Phone Example)
Will Semiconductor Ltd.
2
Jun, 2014 - Rev. 1.1
WAS4735Q
Absolute maximum ratings
Parameter
Supply voltage range
Data input/output voltage range
Select input voltage range
Continues output current
Junction temperature range
Lead temperature range
Storage temperature range
Thermal resistance
ESD protection (HBM)
Symbol
VCC
V
DATA
V
SEL
I
OUT
T
J
T
L
T
STG
R
θJA
I/O to VCC, I/O to GND
I/O to I/O
Value
-0.5 ~ 6.5
-0.5 ~ 6.5
-0.5 ~ 6.5
±
50
150
260
-65 ~ 150
250
±
6000
±
4000
o
Unit
V
V
V
mA
o
o
o
C
C
C
C/W
V
V
Recommend operating ratings
Parameter
Supply voltage range
Data input/output voltage range
Select input voltage range
Enable control input voltage range
Operating temperature range
Symbol
VCC
V
DATA
V
SEL
V
OE
T
A
Value
2.3 ~ 5.5
0.0 ~ VCC
0.0 ~ VCC
0.0 ~ VCC
-40 ~ 85
Unit
V
V
V
V
o
C
Will Semiconductor Ltd.
3
Jun, 2014 - Rev. 1.1
WAS4735Q
Electronics Characteristics
(Ta=25
o
C, VCC=4.5V, unless otherwise noted)
Parameter
Select and OE logic high level
Select and OE logic low level
Supply quiescent current
Select input leakage current
Off state switch leakage current
On state switch leakage current
On-Resistance
On-Resistance match
On-Resistance flatness
Propagation delay time
Select input to switch on time
Select input to switch off time
Break-Before-Make time
-3dB Bandwidth
Off isolation
Crosstalk
Charge injection
(Select input to common I/O)
Select pin input capacitance
D1n, D2n,Dn Off capacitance
D1n, D2n,Dn On capacitance
Symbol
V
IH
V
IL
I
CC
I
SEL
I
OFF
I
ON
R
ON
∆ R
ON
R
FLAT(ON)
T
PLH
/ T
PHL
T
ON
T
OFF
T
BBM
BW
OIRR
Xtalk
Qg
C
IN
C
OFF
C
ON
VCC=3.0V,
V
DATA
=0~0.4V,I
OUT
=8mA,
VCC=3.0V,
V
DATA
=0~0.4V,I
OUT
=8mA,
VCC=3.0V,
V
DATA
=0~1.0V,I
OUT
=8mA,
C
L
=10pF, R
L
=50Ω
C
L
=10pF, R
L
=50Ω
C
L
=10pF, R
L
=50Ω
Generated by design
R
L
=50Ω, C
L
=2pF
R
L
=50Ω, F=250MHz
R
L
=50Ω, F=250MHz
C
L
=0.1nF, VCC=3.3V
R
G
=0Ω, V
G
=GND
VCC=0V
VCC=3.3V, OE=3.3V
VCC=3.3V, OE=0V
100
1.2
-50
-30
5
5
5
6.5
5.0
0.15
1.8
0.25
200
100
Conditions
VCC=3.0½4.5
VCC=2.3½3.0
VCC=3.0½4.5
VCC=2.3½3.0
I
OUT
=0,
V
SEL
>1.5V or V
SEL
<0.7V
V
SEL
=VCC
60
Min.
1.7
1.4
0.6
0.4
80
±1.0
±1.0
±1.0
7.5
0.20
2.2
Typ.
Max.
Unit
V
V
V
V
uA
uA
uA
uA
us
us
ns
ns
GHz
dB
dB
pC
pF
pF
pF
Will Semiconductor Ltd.
4
Jun, 2014 - Rev. 1.1
WAS4735Q
Typical Characteristics
(Ta=25
o
C, VCC=4.5V, unless otherwise noted)
Bandwidth
Off isolation
Crosstalk
Will Semiconductor Ltd.
5
Jun, 2014 - Rev. 1.1
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