WD3119
WD3119
High Efficiency, 40V Step-Up White LED
Driver
Descriptions
The WD3119 is a constant current, high efficiency LED
driver. Internal MOSFET can drive up to 10 white LEDs
in series and 3S9P LEDs with 1.2A current limit and
40V OVP. A Pulse-Width-Modulation (PWM) signal can
be applied to the EN pin for LED dimming. The device
operates with 1MHz fixed switching frequency to
reduce output ripple, improve conversion efficiency,
and allows using small external components.
The WD3119 is available in SOT-23-6L package and
TSOT-23-6L Package. Standard product is Pb-free and
Halogen-free.
FB 3
4 EN
GND 2
5 OVP
LX 1
6 VIN
Http//:www.sh-willsemi.com
SOT-23-6L / TSOT-23-6L
Features
Input voltage range
Open LED Protection
Reference Voltage
Switching frequency
Efficiency
Main switch current limit
PWM Dimming frequency
: 3~5.5V
: 43V (Typ.)
: 200mV (Typ.)
: 1MHz (Typ.)
: Up to 92%
: 1.2A (Typ.)
: (5KHz to200KHz)
6
Pin configuration (Top view)
5
4
6
5
4
3119
YYWW
3119
FCYW
Applications
Smart Phones
Tablets
Portable games
1
2
3
1
2
3
SOT-23-6L
3119 = Device code
YY = Year code
WW = Week code
Marking
TSOT-23-6L
3119 = Device code
FC = Package Code
Y = Year code
W
= Week code
Order information
Device
WD3119E-6/TR
WD3119F-6/TR
Package
SOT-23-6L
TSOT-23-6L
Shipping
3000/Reel&Tape
3000/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014 - Rev. 1.9
WD3119
Typical applications
L1
10uH~22uH
VIN
CIN
2.2uF
6 VIN
LX 1
D1
WSB5503W
COUT
50V/1uF
VOUT
4 EN
OVP 5
WD3119
2 GND
FB 3
RSET
Pin descriptions
Symbol
LX
GND
FB
EN
OVP
VIN
Pin No.
1
2
3
4
5
6
Descriptions
Switch Output
Ground
Feedback
Enable, Active High
OVP Pin, Connect to VOUT
Power Supply
Block diagram
OVP
OVP
PWM
COMP
Current
Sense
Gate
Driver
LX
VIN
UVLO
PWM
Logic
Chip Enable
Bandgap
Reference
200mV
I
SENSE
OCP
1.2A
OSC
1MHz
EN
PWM
Dimming
Logic
Low-Pass
Filter
FB
EA
Soft
Start
V
REF
V
REF
Thermal
Shutdown
GND
Will Semiconductor Ltd.
2
Aug, 2014 - Rev. 1.9
WD3119
Absolute maximum ratings
Parameter
VIN pin voltage range
OVP pin voltage range
EN pin voltage range
LX pin voltage range (DC)
Power Dissipation – SOT-23-6L (Note 1)
Power Dissipation – SOT-23-6L (Note 2)
Junction to Ambient Thermal Resistance – SOT-23-6L (Note 1)
Junction to Ambient Thermal Resistance – SOT-23-6L (Note 2)
Symbol
V
IN
V
OVP
-
-
P
D
R
θJA
T
J
T
L
Topr
Tstg
Value
-0.3½6.5
-0.3½46
-0.3½V
IN
-0.3½46
0.5
0.3
250
416
150
260
-40 ~ 85
-55 ~ 150
Unit
V
V
V
V
W
W
o
o
C/W
C/W
o
o
o
o
Junction temperature
Lead temperature(Soldering, 10s)
Operation temperature
Storage temperature
C
C
C
C
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings”
may cause substantial damage to the device. Functional operation of this device at other conditions beyond
those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device
reliability.
Note 1:
Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper
Note 2:
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Will Semiconductor Ltd.
3
Aug, 2014 - Rev. 1.9
WD3119
Electronics Characteristics
(Ta=25
o
C, V
IN
=3.7V, V
EN
=V
IN
, C
IN
=C
OUT
=1uF, unless otherwise noted)
Parameter
Operation Voltage Range
Under Voltage Lockout
Over-Voltage Threshold
UVLO Hysteresis
Quiescent Current
Supply Current
Shutdown Current
Operation Frequency
Maximum Duty Cycle
PWM Dimming Clock Rate
PWM Dimming Duty Cycle
Feedback Reference
On Resistance
Current Limit
EN Threshold Voltage
EN Sink Current
Thermal Shutdown Temperature
T
SD
Hysteresis
Shutdown Delay
V
REF
R
ON
I
LIM
V
ENL
V
ENH
I
EN
T
SD
T
SD-HYS
t
SHDN
1.5
3
160
30
1
I
LX
=100mA
Symbol
V
IN
V
UVLO
V
OVP
V
UVLO-HYS
I
Q
I
S
I
SD
f
OSC
D
MAX
Recommended
No Switching
Switching
V
EN
< 0.4V
0.8
90
5
3
185
200
0.5
1.2
0.4
1
92
200
100
215
V
IN
Rising
Test Condition
Min
3
1.8
40
Typ
--
2.2
43
0.1
0.3
1.5
1
3
1
1.2
Max
5.5
2.5
46
Units
V
V
V
V
mA
mA
μA
MHz
%
KHz
%
mV
Ω
A
V
V
μA
°
C
°
C
ms
Will Semiconductor Ltd.
4
Aug, 2014 - Rev. 1.9
WD3119
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
100
90
100
90
Efficiency(%)
Efficiency(%)
8LED
80
70
60
50
40
VIN=3.6V L=22uH
VIN=4.2V L=22uH
VIN=5V L=22uH
80
70
60
50
40
10LED
VIN=3.6V L=22uH
VIN=4.2V L=22uH
VIN=5V L=22uH
0
5
10 15 20 25 30 35 40 45 50
0
5
10 15 20 25 30 35 40 45 50
Output Current (mA)
Efficency vs. Output Current
100
90
Output Current (mA)
Efficency vs. Output Current
100
90
Efficiency(%)
70
60
50
40
3S9P LED
VIN=3.6V L=10uH
VIN=4.2V L=10uH
VIN=5V L=10uH
Efficiency(%)
80
80
70
60
50
40
3.0
3S9P LED, L=10uH
IOUT=180mA
0
20 40 60 80 100 120 140 160 180 200
3.5
4.0
4.5
5.0
5.5
Output Current (mA)
Efficency vs. Output Current
21.0
20.8
20.6
20
18
16
Supply Voltage (V)
Efficency vs. Supply Voltage
LED Current(mA)
LED Current(mA)
20.4
20.2
20.0
19.8
19.6
19.4
19.2
19.0
2.5
3.0
3.5
4.0
4.5
ILED=20mA
6LED
8LED
10LED
14
12
10
8
6
4
2
10LED, f=100k, Rset=10
Vin=3.6V
Vin=4.2V
Vin=5V
5.0
5.5
0
10
20
30
40
50
60
70
80
90
Supply Voltage(V)
LED Current vs. Supply Voltage
Duty(%)
LED Current vs. PWM Duty
Will Semiconductor Ltd.
5
Aug, 2014 - Rev. 1.9
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