WD3132
WD3132
High Efficiency, 38V Step-Up White LED
Driver for Medium LCD Panel Backlight
Descriptions
The WD3132 is a constant current, high efficiency LED
driver. Internal MOSFET can drive up to 10 white LEDs
in series and 10S4P / 8S5P LEDs with 38V OVP. Peak
inductor current limit is larger than 1.5A. For LED
dimming, a Pulse-Width-Modulation (PWM) signal can
be applied to the EN pin. The device operates at
optimized 600k Hz fixed switching frequency to reduce
output ripple, improve conversion efficiency, and
allows use small external components.
Http//:www.sh-willsemi.com
SOT-23-6L
LX 1
6 VIN
GND 2
5 OVP
The WD3132 is available in SOT-23-6L package.
Standard product is Pb-free and Halogen-free.
FB 3
4 EN
Features
Input voltage range
Open LED Protection
Reference Voltage
Switching frequency
Efficiency
Main switch current limit
PWM Dimming frequency
PWM Dimming Duty
: 3~5.5V
: 38V
: 200mV (±5%)
: 600k Hz (Typ.)
: Up to 92% (10S4P)
: 1.5A (Min.)
: 5KHz to 200KHz
: Min. 4%
Pin configuration (Top view)
6
5
4
3132
EAYW
1
2
3
Applications
Smart Phones
Tablets
Portable games
3132
EA
Y
W
= Device Code
= Package Code
= Year code
= Week code
Marking
Order information
Device
WD3132E-6/TR
Package
SOT-23-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Feb, 2015 - Rev. 2.0
WD3132
Typical applications
VIN
L1
10μH
D1
WSB5508L
VOUT
COUT
2.2μF
VIN
LX
Pin descriptions
Up to 10S4P LEDS
Symbol
LX
GND
FB
Pin No.
1
2
3
4
5
6
Descriptions
Switch Output
Ground
Feedback
Enable, Active High
OVP Pin, Connect
to VOUT
Power Supply
WD3132
CIN
4.7μF
OVP
…
…
…
…
EN
OVP
EN
GND
FB
RSET
VIN
Block diagram
OUT
OVP
Current
Sense
LX
PWM
COMP
VIN
UVLO
PWM
Logic
Gate
Driver
Chip Enable
I
SENSE
Current Limit
Min. 1.5A
OSC
600KHz
EN
PWM
Dimming
Soft
Start
FB
EA
V
REF
Bandgap
Reference
GND
Thermal
Shutdown
Will Semiconductor Ltd.
2
Feb, 2015 - Rev. 2.0
WD3132
Absolute maximum ratings
Parameter
VIN pin voltage range
OVP pin voltage range
EN pin voltage range
LX pin voltage range (DC)
Power Dissipation – SOT-23-6L (Note 1)
Power Dissipation – SOT-23-6L (Note 2)
Junction to Ambient Thermal Resistance – SOT-23-6L (Note 1)
Junction to Ambient Thermal Resistance – SOT-23-6L (Note 2)
Symbol
V
IN
V
OVP
-
-
P
D
R
θJA
T
J
T
L
Topr
Tstg
Value
-0.3½6.5
-0.3½30
-0.3½V
IN
-0.3½30
0.5
0.3
250
416
150
260
-40 ~ 85
-55 ~ 150
Unit
V
V
V
V
W
W
o
o
C/W
C/W
o
o
o
o
Junction temperature
Lead temperature(Soldering, 10s)
Operation temperature
Storage temperature
C
C
C
C
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause
substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the
specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Note 1:
Surface mounted on FR-4 board using 1 square inch pad size, dual side, 1oz copper
Note 2:
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Will Semiconductor Ltd.
3
Feb, 2015 - Rev. 2.0
WD3132
Electrical Characteristics
(Ta=25 C, V
IN
=3.6V, V
EN
=V
IN
, C
IN
=4.7uF, C
OUT
=2.2uF, unless otherwise noted.)
Parameter
Operation Voltage Range
Under Voltage Lockout
UVLO Hysteresis
Over-Voltage Threshold
Quiescent Current
Supply Current
Shutdown Current
Operation Frequency
Maximum Duty Cycle
PWM Dimming Clock Rate
Feedback Reference
On Resistance
Current Limit
EN Threshold Voltage
EN Sink Current
Thermal Shutdown Temperature
T
SD
Hysteresis
Shutdown Delay
V
REF
R
ON
I
LIM
V
ENL
V
ENH
I
EN
T
SD
T
SD-HYS
t
SHDN
1.5
3
160
30
1
I
LX
=100mA
1.5
0.4
Symbol
V
IN
V
UVLO
V
UVLO-HYS
V
OVP
I
Q
I
S
I
SD
f
OSC
D
MAX
Recommended
No Switching
Switching
V
EN
< 0.4V
500
92
5
190
200
0.3
200
210
600
36
V
IN
Rising
Test Condition
Min
3
1.8
Typ
--
2.2
0.1
38
0.3
1.5
40
1
3
1
700
Max
5.5
2.5
Units
V
V
V
V
mA
mA
μA
kHz
%
KHz
mV
Ω
A
V
V
μA
°
C
°
C
ms
o
Will Semiconductor Ltd.
4
Feb, 2015 - Rev. 2.0
WD3132
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
95
90
85
95
90
85
Efficiency ( % )
80
75
70
65
60
55
0
10
20
30
40
L=10uH,10S4P LEDs
VIN = 3.2 V
VIN = 3.6 V
VIN = 4.2 V
VIN = 5 V
Efficiency ( % )
80
75
70
65
60
L=22uH,10S4P LEDs
VIN = 3.2 V
VIN = 3.6 V
VIN = 4.2 V
VIN = 5 V
50
60
70
80
55
0
10
20
30
40
50
60
70
80
LED Current ( mA )
LED Current ( mA )
Efficiency vs. Output Current
Efficiency vs. Output Current
95
90
85
95
90
85
Efficiency ( % )
Efficiency ( % )
80
75
70
65
60
55
0
L=10uH,8S5P LEDs
VIN = 3.2 V
VIN = 3.6 V
VIN = 4.2 V
VIN = 5 V
80
75
70
65
60
55
0
L=22uH,8S5P LEDs
VIN = 3.2 V
VIN = 3.6 V
VIN = 4.2 V
VIN = 5 V
10 20 30 40 50 60 70 80 90 100
LED Current ( mA )
10 20 30 40 50 60 70 80 90 100
LED Current ( mA )
Efficiency vs. Output Current
Efficiency vs. Output Current
84
84
82
LED Current ( mA )
82
LED Current ( mA )
80
80
78
78
L=10 uH
R
SET
=2.5
3.5
4.0
4.5
Supply Voltage ( V )
5.0
5.5
L=10uH
V
IN
=3.6V
R
SET
=2.5
-20
0
20
40
o
Temperature( C)
60
80
76
3.0
76
-40
LED Current vs. Supply Voltage
LED Current vs. Temperature
Will Semiconductor Ltd.
5
Feb, 2015 - Rev. 2.0
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