WL2803E
WL2803E
Ultra low dropout, 500mA, CMOS LDO
Http://www.sh-willsemi.com
Descriptions
The WL2803E series are ultra low dropout, Low
quiescent current, high PSRR CMOS LDO. The
dropout voltage is 130mV (Typ.) at 500mA load
current.
Using CMOS construction, the quiescent current
consumed by the WL2803E is typically 150uA over the
entire input voltage range, making it attractive for
consumer, networking applications that demand high
output current. The WL2803E series are available in
wide output voltage range version from 1.2V to 3.3V
with 0.1V step.
The WL2803E series offer thermal shutdown (OTP)
and current limit functions, to assure the stability of
chip and power system at wrong condition, and it uses
trimming technique to guarantee output voltage
accuracy within ±2%.
The WL2803E regulators are available in SOT-23-5L
packages.
Standard
products
are
Pb-free
and
Halogen-free.
1
2
3
5
4
VOUT
5
NC
4
SOT-23-5L
1
VIN
2
GND
3
EN
Pin Configuration (Top View)
WS
**
YYWW
Features
Input voltage
Output voltage
Output current
PSRR
Dropout voltage
Output noise
: 2.5V~5.5V
: 1.2V, 1.8V, 3.3V
(Or upon request)
: 500mA
: 65dB @ 1KHz
: 130mV @ I
OUT
=0.5A
: 100uV
WS = Device code
**
= Voltage code (33: 3.3V)
YY = Year code
WW = Week code
Marking
Order Information
For detail information, Please refer to page 9.
Quiescent current : 150μA Typ.
Applications
LCD TV
STB
Computer, Graphic card
Network communication equipments
Others portable electronics devices
May. 2014 – Rev1.6
Will Semiconductor Ltd.
1
WL2803E
Typical Application
Pin Description
PIN
VIN
4.7uF
1
2
3
ON
OFF
4
5
VOUT
4.7uF
1
2
3
4
5
Symbol
VIN
GND
EN
NC
VOUT
Description
Input
Ground
Enable, Active High
Not connect
Output
Block Diagram
VIN
Current
Limit
VOUT
V
REF
EN
Enable
Control
OTP
GND
Will Semiconductor Ltd.
2
May. 2014 – Rev1.6
WL2803E
Absolute Maximum Ratings
Parameter
Input voltage range
Output voltage range
Power dissipation * *
Power dissipation * *
Thermal resistance *
Thermal resistance *
1 3
2 3
1
2
Symbol
V
IN
V
OUT
P
D
R
θJA
T
J
T
L
Tstg
HBM
MM
Value
-0.3½6.5
-0.3½V
IN
0.7
0.5
180
250
150
260
-55 ~ 150
±8000
±400
Unit
V
V
W
W
o
o
C/W
C/W
o
o
o
Junction temperature
Lead temperature(10s)
Storage temperature
ESD Ratings
C
C
C
V
V
Note:
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
*1:
Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper
*2:
Surface mounted on FR-4 board using minimum pad size, 1oz copper
*3: Power dissipation is calculate by P
D
= (V
IN
-V
OUT
) x I
OUT
Recommend Operating Ratings
Parameter
Operating Supply voltage
Operating Temperature Range
Symbol
V
IN
Topr
Value
2.5½5.5
-40½85
Unit
V
o
C
Will Semiconductor Ltd.
3
May. 2014 – Rev1.6
WL2803E
Electronics Characteristics
(Ta=25
o
C, V
IN
=V
OUT
+1V, C
IN
=C
OUT
=4.7uF, unless otherwise noted)
Parameter
Symbol
Condition
V
OUT
<1.5V, V
IN
=2.5V,
I
OUT
=1mA
Output Voltage
V
OUT
V
OUT
≧1.5V,
I
OUT
=1mA
V
OUT
=V
OUT
*0.98,
I
OUT
=1A
V
IN
=5V
V
OUT
=3.3V, V
IN
=4.3~6.0V,
I
OUT
=1mA
V
OUT
=3.3V , I
OUT
=1~500mA
V
OUT
=3.3V, I
OUT
=0
V
EN
= 0V
V
IN
=(V
OUT
+1V)
DC
+0.2V
P-P
Power Supply Ripple Rejection
PSRR
F=1KHz ,I
OUT
=10mA
V
IN
=(V
OUT
+1V)
DC
+0.2V
P-P
F=10KHz, I
OUT
=10mA
Output noise voltage
EN logic high voltage
EN logic low voltage
Thermal shutdown threshold
Thermal shutdown hysteresis
e
NO
V
ENH
V
ENL
T
SD
△
T
SD
10Hz to 100KHz, C
OUT
=4.7
μF
V
IN
=5.5V, I
OUT
=1mA
V
IN
=5.5V, I
OUT
=0mA
165
30
1.2
0.4
0.65
5
10
150
0.1
65
dB
58
100
10
30
200
1.0
Min.
V
OUT
-
30mV
V
OUT
*
0.98
Typ.
V
OUT
Max.
V
OUT
+
30mV
V
OUT
*
1.02
Unit
V
V
OUT
Dropout Voltage
Current Limit
Line Regulation
Load Regulation
Quiescent Current
Shut-down Current
V
DROP
I
LIM
△V
LINE
△V
Load
I
Q
I
SHDN
250
450
mV
A
mV
mV
uA
uA
µV
P-P
V
V
o
o
C
C
Will Semiconductor Ltd.
4
May. 2014 – Rev1.6
WL2803E
Typical characteristics
(Ta=25
o
C, V
IN
=V
OUT
+1V, C
IN
=C
OUT
=4.7uF, unless otherwise noted)
200
190
Quiescent Current: I
Q
(uA)
300
250
200
150
100
50
0
-50
V
OUT
=3.3V
I
OUT
=0mA
-25
0
25
50
75
100 125 150
o
Quiescent Current: I
Q
(uA)
180
170
160
150
140
130
120
110
100
3.0
3.5
4.0
4.5
5.0
Input Voltage: V
IN
(V)
V
OUT
=3.3V
I
OUT
=0mA
5.5
6.0
Ambient Temperature: T
A
( C)
Quiescent current vs. Supply voltage
3.8
I
OUT
=600mA
Quiescent current vs. Ambient temperature
3.8
Output Voltage: V
OUT
(V)
3.7
3.6
Output Voltage: V
OUT
(V)
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
I
OUT
=1mA
-25
0
25
50
75 100 125 150
o
Ambient Temperature: T
A
( C)
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
3.8
4.0
4.2
4.4 4.6 4.8 5.0
Input Voltage: V
IN
(V)
5.2
5.4
2.8
-50
Output voltage vs. Supply voltage
3.8
3.7
3.6
Output Voltage: V
OUT
(V)
Output voltage vs. Ambient temperature
3.8
T
A
= -40 C
Output Voltage: V
OUT
(V)
o
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
T
A
= 25 C
o
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
0
100
200
300
400
500
Output Current: I
OUT
(mA)
600
V
IN
=5.5V
V
IN
=4.2V
V
IN
=3.8V
V
IN
=5.5V
V
IN
=4.2V
V
IN
=3.8V
0
100
200
300
400
500
Output Current: I
OUT
(mA)
600
Output voltage vs. Output current
Output voltage vs. Output current
May. 2014 – Rev1.6
Will Semiconductor Ltd.
5
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