WNM01N10
WNM01N10
Single N-Channel, 100V, 1.7A, Power MOSFET
V
DS
(V)
100
Typical Rds(on) (Ω)
0.235@ V
GS
=10V
0.255@ V
GS
=4.5V
G
D
S
Http://www.sh-willsemi.com
SOT-23
Descriptions
The WNM01N10 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N10 is Pb-free and
Halogen-free.
1
G
D
3
2
S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23
NA
Y
= Device Code
= Year
= Week
Marking
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Device
W
Order information
Package
SOT-23
Shipping
3000/Reel&Tape
WNM01N10-3/TR
Will Semiconductor Ltd.
1
2017/05/03 – Rev. 1.3
WNM01N10
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
b d
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
2.03
1.62
2.27
1.45
1.88
1.5
1.95
1.25
1S
10 S
100
±20
1.70
1.36
1.60
1.02
1.50
1.20
1.25
0.80
7
-55 to 150
260
-55 to 150
1.52
1.21
1.27
0.81
1.34
1.07
1.00
0.64
Steady State
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
t
≤
1s
Junction-to-Ambient Thermal Resistance
a
t
≤
10 s
Steady State
t
≤
1s
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
a
b
c
d
Symbol
R
θJA
Typical
40
60
88
50
Maximum
55
78
108
64
100
125
75
Unit
°C/W
t
≤
10 s
Steady State
Steady State
R
θJA
R
θJC
85
105
60
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380µs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
2017/05/03 – Rev. 1.3
WNM01N10
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
b, c
Forward Trans conductance
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
g
fs
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
td(ON)
tr
td(OFF)
tf
V
SD
V
GS
= 0V, I
D
= 250uA
V
DS
= 80V, V
GS
= 0V
V
DS
= 0 V, V
GS
=±20V
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 10V, I
D
= 1.4A
V
GS
=4.5V, I
D
= 1.3A
V
DS
= 10V, I
D
= 3A
V
GS
= 0 V,
f = 1.0 MHz,
V
DS
= 25 V
V
GS
= 4.5 V,
V
DS
= 50 V,
I
D
= 1.6 A
100
1
±100
1
1.9
235
255
1.1
350
23.6
14.2
3.6
0.7
1.1
1.6
5.2
17.2
23.3
6.6
0.8
1.2
2.5
310
350
V
uA
nA
V
mΩ
S
CAPACITANCES,
Input Capacitance
Output Capacitance
CHARGES
pF
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
nC
V
GS
= 4.5 V,
V
DD
= 50 V,
R
L
= 17
Ω,
I
D
= 3 A
R
G
= 3.3
Ω
V
GS
= 0 V, I
S
= 1A
ns
V
Will Semiconductor Ltd.
3
2017/05/03 – Rev. 1.3
WNM01N10
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
2.0
I
D
- Drain to Source Current(A)
I
D
- Drain to Source Current(A)
8
Vgs=7V
Vgs=10V
Vgs=4.5V
Vgs=4.5V
V
DS
=5V
1.6
6
1.2
T=150
C
T=25
C
4
0.8
T=-50
C
2
0.4
2.0
2.2
2.4
2.6
2.8
3.0
3.2
0
0
1
2
3
4
V
DS
- Drain to Source Voltage(V)
V
GS
- Gate to Source Voltage(V)
Output characteristics
1.0
Transfer characteristics
0.26
V
GS
=4.5V
0.25
V
GS
=5V
0.24
V
GS
=7V
I
D
=1A
RDS(on)- On-Resistance
(
)
R
DS(on)
- On-Resistance(
)
0.8
0.6
T=125
C
0.4
0.23
V
GS
=10V
0.22
0.4
0.8
1.2
1.6
2.0
0.2
T=25
C
0.0
I
DS
- Drain to Source Current(A)
3
4
5
6
7
8
9
10
V
GS
-Gate to Source Voltage(V)
On-Resistance vs. Drain current
2.4
I
D
=2A
2.0
V
GS
=10V
On-Resistance vs. Gate-to-Source voltage
Gate Threshold Voltage Normalized
1.2
I
D
=250uA
1.1
R
DS(on)
- On-Resistance Normalized
1.6
1.0
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
Temperature (
C)
Temperature (
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2017/05/03 – Rev. 1.3
WNM01N10
450
400
350
Ciss
2.0
I
SD
- Source to Drain Current(A)
f=1MHZ
V
GS
=0V
T=25
C
1.5
CAPACITANCE (pF)
300
250
200
150
100
50
0
0
5
10
Crss
Coss
1.0
T=150
C
0.5
T=-50
C
15
20
25
0.0
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
-Drain to Source Voltage (V)
V
SD
- Source to Drain Voltage(V)
Capacitance
Body diode forward voltage
80
T
J(Max)
=150
C
10
I
D
- Drain Current (A)
60
T
A
=25
C
1
1ms
Power(W)
40
0.1
Limited by R
DS(on)
10ms
DC
100ms
1s
10s
20
0.01
Bvdss Limit
1
10
V
DS
- Drain Source Voltage (V)
100
0
1E-4
1E-3
0.01
0.1
1
10
100
Pulse width (S)
*V
GS
>minimum V
GS
at which R
DS(on)
is specified
Single pulse power
Safe operating power
10
9
8
I
D
=1.5A
V
DS
=20V
V
DS
=40V
V
DS
=80V
V
DS
=60V
V
GS
-Gate Voltage (V)
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd.
5
2017/05/03 – Rev. 1.3
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