WNM2021
WNM2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
V
DS
(V)
20
Rds(on) ( )
0.220@ V
GS
=4.5V
0.260@ V
GS
=2.5V
0.320@ V
GS
=1.8V
G
S
D
Http://www.sh-willsemi.com
SOT-323
Descriptions
The WNM2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM2021 is Pb-free and
Halogen-free.
1
G
2
S
D
3
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-323
1
3
21*
2
21 = Device Code
*
= Month (A~Z)
Marking
Applications
Device
DC-DC converter circuit
Order information
Package
SOT-323
Shipping
3000/Reel&Tape
WNM2021-3/TR
Small Signal Switch
Load Switch
Level Shift
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.3
WNM2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
0.89
0.71
0.37
0.23
0.78
0.62
0.29
0.18
1.4
150
260
-55 to 150
10 S
Steady State
20
±6
0.82
0.65
0.31
0.20
0.70
0.56
0.23
0.14
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
t
10 s
10 s
Steady State
Steady State
Steady State
Symbol
R
R
R
JA
Typical
275
325
375
Maximum
335
395
430
535
300
Unit
°C/W
JA
445
260
JC
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.3
WNM2021
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250uA
VGS = 4.5V, ID = 0.55A
Drain-to-source On-resistance
R
DS(on)
VGS = 2.5V, ID = 0.45A
VGS = 1.8V, ID = 0.35A
Forward Transconductance
g
FS
VDS = 5 V, ID = 0.55A
0.45
0.58
0.85
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250uA
V
DS
=16 V, V
GS
= 0V
V
DS
= 0 V, V
GS
=±5V
20
1
5
V
uA
uA
Symbol
Test Conditions
Min
Typ
Max
Unit
220
260
320
2.0
310
360
460
S
m
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 0.35A
0.5
0.7
1.5
V
td(ON)
tr
td(OFF)
tf
22
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 0.55A
V
GS
= 0 V, f = 100 kHz, V
DS
=
10 V
50
13
8
1.15
0.06
0.15
0.23
nC
pF
V
DD
=10V,
I
D
=0.55A,
V
GS
=4.5V,
80
700
380
ns
R
G
=6Ω
Will Semiconductor Ltd.
3
2015/08/25 – Rev. 1.3
WNM2021
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
4
IDS-Drain-to-Source Current (A)
2.0
I
DS
-Drain to Source Current(A)
VGS= 2.5V ~5.0V
V
DS
=5V
1.6
3
VGS=2.0V
1.2
T=-50 C
T=25 C
o
o
2
VGS=1.5V
0.8
T=125 C
o
1
0.4
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
VDS-Drain-to-Source Voltage(V)
VGS-Gate-to-Source Voltage(V)
Output characteristics
400
350
300
250
200
150
100
V
GS
=2.5V
V
GS
=1.8V
Transfer characteristics
1600
RDS(on)- On-Resistance (m )
2.0
RDS(on)- On-Resistance(m )
1200
800
V
GS
=4.5V
400
0.4
0.8
1.2
1.6
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IDS-Drain-to-Source Current(A)
VGS-Gate-to-Source Voltage(V)
On-Resistance vs. Drain current
320
On-Resistance vs. Gate-to-Source voltage
0.8
V
GS(TH)
Gate Threshold Voltage (V)
I
D
=250uA
VGS=4.5V, ID=0.55A
R
DS(on)
- On-Resistance (m )
280
0.7
0.6
0.5
0.4
0.3
0.2
-50
240
200
160
120
-50
-25
0
25
50
75 100 125 150
o
Temperature( C)
-25
0
25
50
75 100 125 150
o
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
2015/08/25 – Rev. 1.3
WNM2021
60
50
C - Capacitance(pF)
40
30
20
10
0
Ciss
Coss
Crss
F=100kHz
I
SD
-Source to Drain Current(A)
V
GS
=0V
0.8
0.6
0.4
T=150 C
o
T=25 C
o
0.2
0
2
4
6
8
10
0.1
0.2
V
DS
Drain-to-Source Voltage (V)
0.3 0.4 0.5 0.6 0.7 0.8
V
SD
-Source-to-Drain Voltage(V)
0.9
Capacitance
Body diode forward voltage
10
I
D
- Drain Current (A)
1
10 ms
100 ms
0.1
Limited by R
DS(on)
1s
10 s
0.01
T
A
= 25 °C
Single Pulse
DC
0.001
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
100
Safe operating power
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 325 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.3
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