WNM3013
WNM3013
Small Signal N-Channel, 30V, 0.10A, MOSFET
Http://www.willsemi.com
Descriptions
The WNM3013 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent R
DS(ON)
with
low gate charge. This device is suitable for use in small
signal switch. Standard product WNM3013 is Pb-free.
D
3
SOT-723
1
G
2
S
Features
Pin Configuration
Trench N-Channel
Supper high density cell design for extremely low
Rds(on)
Exceptional ON resistance and maximum DC
current capability
Small package design with SOT-723
1
2
3
KN
KN = Device Code
Applications
Marking
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
Device
Order Information
Package
SOT-723
Shipping
8000/Tape&Reel
WNM3013-3/TR
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.0
WNM3013
Absolute Maximum ratings
Symbol
V
DSS
V
GSS
I
D
P
D
R
T
J
T
SG
JA
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current – Continue
Power Dissipation
Junction-to-Ambient Thermal Resistance
Operation junction temperature range
Storage temperature range
Ratings
30
20
0.10
0.15
833
150
-55~150
Unit
V
V
A
W
°C/W
O
O
C
C
Electronics Characteristics
(T
A
=25
o
C unless otherwise noted)
Symbol
V(
BR
)
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
FS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Test Condition
V
GS
=0V, I
D
=10uA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= 20V
V
DS
= 3V, I
D
=100uA
V
GS
=4V, I
D
=10mA
V
GS
=2.5V, I
D
=1mA
V
DS
= 3V, I
D
= 10mA
Min
30
Typ.
Max
Unit
V
Off Characteristics
1
1
0.8
5
7
20
13
9
4
1.5
8
13
uA
uA
V
ON Characteristics
mS
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=5V,
F=1MHz
V
GS
=0V,
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
=5V,
I
D
=10mA,
V
GS
=5V,
R
L
=500
,
15
35
80
80
ns
R
G
=10
Will Semiconductor Ltd.
2
Nov, 2011 - Rev. 1.0
WNM3013
Typical Performance Graph
Output Characteristics
0.20
200
Transfer Characteristics
V
GS
=3.0V
100
T
a
=25
Pulsed
4.0V
3.5V
(A)
0.15
30
I
D
(mA)
0.10
DRAIN CURRENT
DRAIN CURRENT
V
GS
=2.5V
I
D
0.05
10
3
1
V
GS
=2.0V
0.3
V
DS
=3V
T
a
=25
Pulsed
V
GS
=1.5V
0.00
0
1
2
3
4
5
0.1
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
60
15
R
DS(ON)
—— V
GS
T
a
=25
Pulsed
T
a
=25
Pulsed
( )
R
DS(ON)
40
( )
10
ON-RESISTANCE
ON-RESISTANCE
R
DS(ON)
I
D
=100mA
5
20
V
GS
=2.5V
V
GS
=4V
0
1
3
10
30
100
200
I
D
=50mA
0
0
5
10
15
20
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
200
——
V
SD
V
GS
=0V
100
T
a
=25
Pulsed
30
I
S
(mA)
SOURCE CURRENT
10
3
1
0.3
0.1
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
Will Semiconductor Ltd.
3
Nov, 2011 - Rev. 1.0
WNM3013
Package Outline Dimension
SOT-723
Symbol
A
A1
b
b1
c
D
E
E1
e
Dimension in Millimeters
Min.
0.000
0.170
0.270
1.150
1.150
0.750
0.800 Typ.
7
o
Typ.
Max.
0.500
0.050
0.270
0.370
0.150
1.250
1.250
0.850
Will Semiconductor Ltd.
4
Nov, 2011 - Rev. 1.0
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