WNM3025
WNM3025
Single N-Channel, 50V, 0.3A, Power MOSFET
Http://www.sh-willsemi.com
G
S
D
V
DS
(V)
50
Typical R
DS(on)
(Ω)
1.3 @V
GS
=10V
1.4 @V
GS
=4.5V
4.0 @V
GS
=1.8V
ESD
Protected
DFN1006-3L
Descriptions
The WNM3025 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3025 is Pb-free.
D
G
S
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN1006-3L
Pin configuration (Top view)
J = Device Code
* = Month(A~z)
Marking
Applications
Order information
DC/DC converters
Device
WNM3025-3/TR
Package
DFN1006-3L
Shipping
10K/Tape&Reel
Power supply converters circuit
Load/Power Switching for portable device
Will Semiconductor Ltd.
1
Jan.2018- Rev.1.1
WNM3025
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
bd
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
10 s
Steady State
50
±
20
Unit
V
0.23
0.18
0.32
0.20
0.22
0.17
0.28
0.18
0.9
0.21
0.17
0.27
0.18
0.20
0.16
0.25
0.16
A
W
A
W
A
°
C
°
C
°
C
-55 to 150
260
-55 to 150
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
a
Symbol
t ≤ 10 s
Steady State
b
Typical
340
390
387
445
240
Maximum
395
455
441
505
285
Unit
R
θJA
R
θJA
R
θJC
t ≤ 10 s
Steady State
Steady State
°
C/W
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°
C.
Will Semiconductor Ltd.
2
Jan.2018- Rev.1.1
WNM3025
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 10V, I
D
= 0.45A
Drain-to-source On-resistance
R
DS(on)
V
GS
= 4.5V, I
D
= 0.25A
V
GS
= 2.5V, I
D
= 0.01A
V
GS
= 1.8V, I
D
= 0.01A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 0.25A
0.8
1.5
V
td(ON)
tr
td(OFF)
tf
V
GS
= 5V, V
DS
= 5V,
R
L
= 500Ω, R
G
= 10Ω,
ID = 10mA
8.6
4
23.8
14.2
ns
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 30V,
I
D
=0.1A
V
DS
= 15V, I
D
= 0.1A
CHARGES, CAPACITANCES AND GATE RESISTANCE
V
GS
= 0 V, f = 1.0MHz, V
DS
=
15 V
23
12
5
1.6
0.25
0.4
0.45
nC
pF
0.8
1.0
1.2
1.4
2
4
0.5
1.5
1.8
2
6
15
S
Ω
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250uA
V
DS
=30V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±20V
50
1
±5
V
uA
uA
Symbol
Test Conditions
Min
Typ
Max
Unit
Will Semiconductor Ltd.
3
Jan.2018- Rev.1.1
WNM3025
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
1.0
0.9
1.0
V
DS
=3.0V
V
GS
=2.5V
V
GS
=4V
V
GS
=4.5V
V
GS
=10V
I
D
- Drain to Source Current(A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.5
1.0
1.5
I
D
- Drain to Source Current(A)
0.8
0.8
-55 C
O
25 C
O
150 C
O
0.6
0.4
0.2
2.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain to Source Voltage(V)
V
GS
- Gate to Source Voltage(V)
Output characteristics
Transfer characteristics
4.0
3.5
3.0
30
25
I
D
=0.25A
25 C
o
150 C
o
R
DS(on)
- On-Resistance(
)
R
DS(on)
- On-Resistance(
)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V
GS
=2.5V
V
GS
=4V
V
GS
=4.5V
V
GS
=10V
20
15
10
5
0.1
0.2
0.3
0.4
0.5
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
-Gate to Source Voltage(V)
I
DS
- Drain to Source Current(A)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Source voltage
2.0
1.8
1.15
Normalized On-Resistance
I
D
=0.25A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Normalized Gate Threshold Voltage
V
GS
=4.5V
1.10
1.05
1.00
0.95
0.90
0.85
0.80
I
D
=250uA
-50
0
50
100
150
-50
0
50
100
150
Temperature(
C)
Temperature (
C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Jan.2018- Rev.1.1
WNM3025
40
1.0
F = 1MHZ
I
SD
- Source to Drain Current(A)
30
Capacitance (pF)
Ciss
0.8
-55 C
O
25 C
O
150 C
O
0.6
20
Coss
Crss
0.4
10
0.2
0
0
5
10
15
20
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
-Drain to Source Voltage (V)
V
SD
- Source to Drain Voltage(V)
Capacitance
Body diode forward voltage
80
70
60
10
T
J(MAX)
=150 C
T
A
=25 C
o
o
I
D
-Drain Current (A)
1
Limit by Rdson
Power (W)
50
40
30
20
10
0
1E-6
0.1
100us
10s
DC
T
A
=25 C
Single Pulse
o
1ms
10ms
0.01
100ms
1s
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1E-3
0.1
Pulse width (S)
V
DS
-Drain to Source Voltage(V)
1
10
100
*V
GS
>minimum V
GS
at which R
DS(ON)
is specified
Single pulse power
Safe operating power
10
8
V
DS
= 30V
I
D
=0.1A
V
GS
-Gate Voltage (V)
6
4
2
0
0.0
0.5
Qg(nC)
1.0
1.5
2.0
Gate charge Characteristics
Will Semiconductor Ltd.
5
Jan.2018- Rev.1.1
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