WPM2031
WPM2031
Single P-Channel, -20V, -0.65A, Power MOSFET
Http//:www.willsemi.com
V
DS
(V)
-20
Rds(on) (Ω)
0.495@ V
GS
=–4.5V
0.665@ V
GS
=–2.5V
0.882@ V
GS
=–1.8V
ESD Protected
Descriptions
The WPM2031 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent R
DS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2031 is Pb-free and
Halogen-free.
1
G
SOT-723
D
3
2
S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-723
1
3
1*
2
1
*
=Device Code
= Month(A~Z)
Marking
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Device
Order information
Package
SOT-723
Shipping
8000/Reel&Tape
WPM2031-3/TR
Will Semiconductor Ltd.
1
Sep, 2012 - Rev.1.1
WPM2031
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
-0.65
-0.52
0.42
0.27
-0.55
-0.44
0.30
0.19
-1.0
150
260
-55 to 150
10 S
Steady State
-20
±5
-0.60
-0.48
0.36
0.23
-0.51
-0.41
0.26
0.17
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
≤
10 s
Steady State
t
≤
10 s
Steady State
Steady State
Symbol
R
θJA
R
θJA
R
θJC
Typical
280
345
400
245
280
Maximum
340
410
470
280
340
Unit
°C/W
a
b
c
d
Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR-4 board using minimum pad size, 1oz copper
Pulse width<380µs, Duty Cycle<2%
Maximum junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Sep, 2012 - Rev.1.1
WPM2031
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
b, c
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
V
GS
= 0 V, I
D
= -250uA
V
DS
=-16V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±5V
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -0.45A
V
GS
= -2.5V, I
D
= -0.35A
V
GS
= -1.8V, I
D
= -0.25A
-20
-1
±5
V
uA
uA
-0.44
-0.65
495
665
882
1.25
-0.81
853
1053
1303
V
mΩ
Drain-to-source On-resistance
Forward Transconductance
CAPACITANCES,
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
CHARGES
g
FS
V
DS
= -5 V, I
D
=-0.45A
S
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
td(ON)
tr
td(OFF)
tf
V
SD
V
GS
= 0 V,
f = 100 KHz,
V
DS
= -10 V
V
GS
= -4.5 V,
V
DS
= -10 V,
I
D
= -0.45A
74.5
10.8
10.2
1.67
0.17
0.30
0.59
nC
pF
V
GS
= -4.5 V,
V
DS
= -10 V,
I
D
=-0.45A
R
G
=6
Ω
0.50
1.76
7.0
8.5
-0.75
-1.5
V
us
V
GS
= 0 V, I
S
= -0.15A
Will Semiconductor Ltd.
3
Sep, 2012 - Rev.1.1
WPM2031
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
2.0
1500
-I
DS
_Drain to Source Current (A)
V
GS
= -2.5 ~ -5V
1.5
V
GS
= -2.0V
-I
DS
- Drain Current (A)
1200
V
DS
= -5V
900
T=-50 C
T=25 C
0
0
1.0
V
GS
= -1.5V
600
0.5
300
T=125 C
0.3
0.6
0.9
1.2
1.5
1.8
0
0.0
0
1
2
3
4
5
0
0.0
-V
DS
_Drain to Source Voltage (V)
-V
GS
- Gate to Drain Voltage (V)
Output characteristics
1000
RDS(on)- On-Resistance(m
Ω
)
1500
Transfer characteristics
800
RDS(on)- On-Resistance (m
Ω
)
V
GS
=-2.5V
V
GS
=-4.5V
I
D
=-0.45A
1200
600
900
400
600
300
200
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-I
DS-Drain-to-Source
Current(A)
-V
GS-Gate-to-Source
Voltage(V)
On-Resistance vs. Drain current
700
On-Resistance vs. Gate-to-Source voltage
0.8
-V
GS(TH)
- Threshold Voltage (V)
RDS(on)- On-Resistance (m
Ω
)
V
GS
=-4.5V I
DS
=-0.45A
600
0.7
0.6
0.5
0.4
0.3
0.2
-25
I
DS
= -250uA
500
400
300
-50
0
50
100
0
150
Temperature ( C)
0
25
50
75
0
100
125
150
Temperature ( C)
On-Resistance vs. Junction temperature
Will Semiconductor Ltd.
4
Threshold voltage vs. Temperature
Sep, 2012 - Rev.1.1
WPM2031
120
250
C-Capacitance (pF)
90
V
GS
=0V
f=100KHZ
-I
SD
- Source to Drain Current (A)
200
T=125 C
150
0
60
T=25 C
0
30
Cin
Cout
Crss
100
0
50
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
10
-V
DS
- Drain to Source Voltage (V)
-V
SD
- Source to Drain Voltage(V)
Capacitance
4.5
10
Body diode forward voltage
-V
GS
Gate to Source Voltage(V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
V
DS
=-10V,I
D
=-0.45A
-I
D
- Drain Current (A)
1
10 ms
100 ms
Limited by R
DS(on)
1s
10 s
0.01
T
A
= 25 °C
Single Pulse
DC
0.1
0.2
0.4
0.6
- Qg (nC)
0.8
1.0
1.2
1.4
1.6
1.8
0.001
0.1
1
10
-V
DS
- Drain-to-Source Voltage (V)
100
Gate Charge Characteristics
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Safe operating power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=
345
°C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Sep, 2012 - Rev.1.1
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