WPM2037
WPM2037
Single P-Channel, -20V, -3.6A , Power MOSFET
V
DS
(V)
-20
Rds(on) ( )
0.047@ V
GS
=
0.060@ V
GS
=
0.076@ V
GS
=
4.5V
2.5V
1.8V
Http//:www.willsemi.com
Descriptions
D
SOT-23-6L
D
5
S
4
The WPM2037 is P-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
(ON)
6
technology and design to provide excellent R
DS
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2037 is Pb-free.
1
D
2
D
3
G
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Pin configuration (Top view)
6
5
4
2037
YYWW
1
2
3
Extremely Low Threshold Voltage
2037
Small package SOT-23-6L
YY
WW
= Device Code
= Year
= Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Device
WPM2037-6/TR
Marking
Order information
Package
SOT-23-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Dec,2011 - Rev.1.1
WPM2037
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
-3.6
-2.9
1.1
0.7
-3.3
-2.7
0.9
0.6
-20
150
260
-55 to 150
10 S
Steady State
-20
±12
-3.3
-2.7
0.9
0.6
-3.1
-2.4
0.8
0.5
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
t
10 s
10 s
Steady State
Steady State
Steady State
Symbol
R
R
R
JA
Typical
90
112
110
Maximum
108
128
128
152
68
Unit
°C/W
JA
132
50
JC
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Dec,2011 - Rev.1.1
WPM2037
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -3.2A
Drain-to-source On-resistance
R
DS(on)
V
GS
= -2.5V, I
D
= -2.8A
V
GS
= -1.8V, I
D
= -2.3A
Forward Transconductance
g
FS
V
DS
= -5.0 V, I
D
= -3.6A
-0.35
-0.58
47
59
77
10
-1.0
61
71
94
S
m
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
=-16 V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±12V
-20
-1
±100
V
uA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= -1.0A
-0.75
-1.5
V
td(ON)
tr
td(OFF)
tf
V
GS
= -4.5 V, V
DS
= -6 V,
R
L
=3
, R
G
=6
9.5
5.8
54
13
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -4.5 V, V
DS
= -10 V,
I
D
= -2.7A
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
-10 V
1130
120
115
11
0.6
1.3
2.7
nC
pF
Will Semiconductor Ltd.
3
Dec,2011 - Rev.1.1
WPM2037
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
-I
DS
-Drain to Source Current(A)
-I
DS
-Drain-to-Source Current (A)
VGS=-3.0 ~ -4.5V
VGS=-2.5V
15
VGS=-2.0V
10
VGS=-1.5V
5
VGS=-1.0V
0
0
1
2
3
4
5
20
V
DS
= -5V
16
T=-50 C
12
T=125 C
8
T=25 C
4
0
0.0
o
o
o
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-V
DS
-Drain-to-Source Voltage(V)
-V
GS
-Gate-to-Source Voltage(V)
Output characteristics
100
R
DS(on)
- On-Resistance(m )
R
DS(on)
- On-Resistance (m )
80
Transfer characteristics
80
V
GS
=-2.5V
60
V
GS
=-4.5V
70
I
DS
=-3.2A
60
40
50
20
40
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
4
6
8
-I
DS
-Drain-to-Source Current(A)
10
-V
GS
-Gate-to-Source Voltage(V)
On-Resistance vs. Drain current
80
R
DS(on)
- On-Resistance (m )
70
60
50
40
30
20
-50
VGS=-4.5V,ID=-3.2A
-V
GS(TH)
Gate Threshold Voltage (V)
On-Resistance vs. Gate-to-Source voltage
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
o
I
DS
=-250uA
-25
0
25
50
75
o
100 125 150
75
100
125
150
Temperature( C)
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Dec,2011 - Rev.1.1
WPM2037
1750
1500
C - Capacitance(pF)
1250
1000
750
500
250
0
0
4
8
12
16
Ciss
Coss
Crss
1.5
-ISD-Source to Drain Current(A)
V
GS
=0V
F=1MHz
1.2
0.9
0.6
0.3
0.2
0.3
0.4
0.5
0.6
0.7
0.8
o
T=150 C
o
T=25 C
20
-V
DS
Drain-to-Source Voltage (V)
-V
SD
-Source-to-Drain Voltage(V)
Capacitance
40
T
J(Max)
=150°C
T
A
=25°C
30
Power (W)
-I
D
(Amps)
10
100
Body diode forward voltage
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
100 s
1ms
1
DC
10s
1s
10ms
100m
20
10
0
0.001
0.1
0.01
0.1
1
10
Pulse Width (s)
100
1000
0.1
1
-V
DS
(Volts)
10
100
Single pulse power
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Safe operating area
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
1. Duty Cycle, D =
3. T
JM
2. Per Unit Base = R
thJA
= 112_C/W
t
1
t
2
Single Pulse
0.01
10
4
10
3
10
2
10
1
1
Square Wave Pulse Duration (sec)
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Dec,2011 - Rev.1.1
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