WPM2341
WPM2341
P-Channel
Enhancement Mode Mosfet
Http://www.sh-willsemi.com
Features
Higher Efficiency Extending Battery Life
Miniature SOT23-3 Surface Mount Package
Super high density cell design for extremely low RDS (ON)
1
3
Applications
DC/DC Converter
Load Switch
Battery Powered System
LCD Display inverter
Power Management in Portable, Battery Powered Products
2
SOT 23-3
pin connections :
P Channel
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150 °C)
a
Symbol
V
DS
V
GS
I
D
I
DM
I
S
5s
Steady
State
-20
±8
Unit
G
1
3
D
V
-3.5
-2.5
S
2
T
A
=25°C
T
A
=80°C
-4.3
-3.2
-20
-1.7
1.25
0.7
Top View
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Maximum Power
Dissipation
a
a
A
-1
0.75
0.42
1
Marking:
Drain
3
T
A
=25°C
T
A
=80°C
P
D
W
W41Z
2
Gate
Source
Operating Junction and Storage
Temperature Range
T
J
, T
stg
- 55 to 150
°C
a.
Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu.
W 41= Specific Device Code
Z = Date Code
Order information
Part Number
WPM2341 3/TR
Package
SOT23-3
Shipping
3000 Tape & Reel
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.9
WPM2341
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance
b
t
5s
Symbol
R
JA
Typical
75
125
Maximum
100
165
Unit
°C/W
Steady State
b.
Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
=25
unless otherwise specified)
Min
-20
-1
100
-0.35
-0.63
52
65
3.0
-1.00
61
71
Typ
Max
Units
V
A
nA
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= -250 A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-16V,V
GS
= 0V
Gate –Source leakage current
I
GSS
V
GS
=
8
V,V
DS
= 0V
On Characteristics
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
=-250 A
Static Drain-Source
V
GS
= -4.5V, I
D
= -3.3A
R
DS(on)
On-Resistance
V
GS
= -2.5V,I
D
= -2.8 A
Forward Transconductance
g
FS
V
DS
= -5 V, I
D
= -3.3A
Dynamic Characteristics
Input Capacitance
C
iss
V
DS
= -6 V, V
GS
= 0V,
Output Capacitance
C
oss
f = 1.0 MHz
Reverse Transfer Capacitance
C
rss
Switching Characteristics
Turn-On Delay Time
t
d(on)
Turn-On Rise Time
t
r
V
GS
= -4.5V, V
DD
= -6 V,
I
D
= -1.0A, R
G
=6.0 ,
Turn-Off Delay Time
t
d(off)
Turn-Off Fall Time
t
f
Total Gate Charge
Q
G(TOT)
Threshold gate charge
Q
G(TH)
V
DS
= -6 V,I
D
= -3.3A,
V
GS
=-4.5V
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
V
SD
V
GS
= 0V,I
S
= -1.6A
700
160
120
25
55
90
60
13
8
0.2
1.2
2.2
-0.
8
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.9
WPM2341
Typical Characteristics
20
V
GS
=-5 thru -2.5 V
16
-2 V
(T
J
= 25°C unless otherwise noted)
20
T
C
= - 55 °C
16
-I
D
- Drain Current (A)
25 °C
125 °C
12
-I
D
- Drain Current (A)
12
8
-1.5 V
4
-1 V
0
0
1
2
3
4
5
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.10
900
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
V
GS
=-2.5 V
0.06
750
600
C
iss
450
0.04
V
GS
=-4.5 V
300
0.02
150
C
rss
C
oss
0.00
0
4
8
12
16
20
0
0
4
8
12
16
20
-I
D
- Drain Current (A)
-V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
=-6 V
I
D
=-3.3 A
R
DS(on)
- On-Resistance
1.5
1.4
1.3
1.2
(Normalized)
1.1
1.0
0.9
0.8
0.7
0
0
2
4
6
8
10
0.6
- 50
V
GS
=-4.5 V
I
D
=-3.3 A
Capacitance
-V
GS
- Gate-to-Source Voltage (V)
4
3
2
1
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Will Semiconductor Ltd.
3
2015/08/25 – Rev. 1.9
WPM2341
Typical Characteristics
20
10
R
DS(on)
- On-Resistance (Ω)
0.12
I
D
=-3.3 A
0.09
I
D
= - 2 A
0.06
(T
J
= 25°C unless otherwise noted)
0.15
-I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
1
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
-V
SD
- Source-to-Drain Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
12
On-Resistance vs. Gate-to-Source Voltage
0.3
I
D
=
-250μA
V
GS(th)
Variance (V)
0.2
Power (W)
10
8
0.1
6
0.0
4
T
A
= 25 °C
- 0.1
2
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
Time (s)
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
Limited by R
DS(on)
*
10
-I
D
- Drain Current (A)
Single Pulse Power
P(t) = 0.0001
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
Will Semiconductor Ltd.
4
2015/08/25 – Rev. 1.9
WPM2341
Typical Characteristics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
(T
J
= 25°C unless otherwise noted)
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 125 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.9
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