WPM3005
WPM3005
Single P-Channel, -30V, -4.1A, Power MOSFET
Http//:www.willsemi.com
V
DS
(V)
Rds(on) ( )
0.057@ V
GS
=
-30
0.057@ V
GS
=
0.083@ V
GS
=
0.083@ V
GS
=
10.0V
10.0V
4.5V
4.5V
SOT-23-3L
Descriptions
D
The WPM3005 is P-Channel enhancement MOS
Field
Effect
Transistor.
Uses
advanced
trench
(ON)
3
technology and design to provide excellent R
DS
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM3005 is Pb-free.
1
G
2
S
Pin configuration (Top view)
Features
3
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23-3L
1
W35*
2
W35 = Device Code
*
= Month (A~Z)
Marking
Applications
Order information
Driver for Relay, Solenoid, Motor, LED etc.
Device
DC-DC converter circuit
Power Switch
Load Switch
Charging
WPM3005-3/TR
Package
Shipping
SOT-23-3L 3000/Reel&Tape
Will Semiconductor Ltd.
1
Dec,
2011 - Rev.1.
2
WPM3005
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
-4.1
-3.3
1.4
0.9
-3.8
-3.0
1.2
0.8
-25
150
260
-55 to 150
10 S
Steady State
-30
±20
Unit
V
-3.4
-2.7
1.0
0.6
-3.2
-2.5
0.8
0.5
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
t
10 s
10 s
Steady State
Steady State
Steady State
Symbol
R
R
R
JA
Typical
65
90
85
Maximum
85
125
100
140
60
Unit
°C/W
JA
115
40
JC
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Dec,
2011 - Rev.1.
2
WPM3005
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -10V, I
D
= -3.0A
Drain-to-source On-resistance
R
DS(on)
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -4.5V, I
D
= -3.0A
Forward Transconductance
g
FS
V
DS
= -5 V, I
D
= -4.1A
-1.5
-2.0
57
57
83
83
Symbol
Test Conditions
Min
Typ
Max
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
= -24 V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±20V
-30
-1
V
uA
±100
nA
-2.5
60
60
90
90
V
m
7.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= -1.0A
-0.55
-0.78
-1.50
V
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
-15 V
670
75
62
14.0
pF
V
GS
= -10 V, V
DS
= -15 V,
I
D
= -4.1 A
1.31
2.0
2.45
nC
td(ON)
tr
td(OFF)
tf
V
GS
= -10 V, V
DS
= -15V,
R
L
=5.0
, R
G
=15
6.8
3.2
25.2
4.4
ns
Will Semiconductor Ltd.
3
Dec,
2011 - Rev.1.
2
WPM3005
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
15
-I
DS
_Drain to Source Current (A)
V
GS
= -10V
-I
DS
- Drain Current (A)
16
V
DS
= -5V
V
GS
= -4.5V
V
GS
= -4.0V
12
T=-50 C
T=25 C
0
0
12
9
8
6
T=125 C
0
4
V
GS
= -3.0V
3
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
-V
DS
_Drain to Source Voltage (V)
-V
GS
- Gate to Drain Voltage (V)
Output characteristics
120
Transfer characteristics
200
RDS(on)- On-Resistance (m )
80
RDS(on)- On-Resistance (m )
100
V
GS
=-4.5V
I
D
=-4.1A
160
120
V
GS
=-10V
60
80
40
40
20
2
4
6
8
10
12
14
0
2
4
6
8
10
-V
GS
-Gate to Source Voltage(V)
-I
DS
-Drain to Source Current (A)
On-Resistance vs. Drain current
90
80
70
60
50
40
30
-50
On-Resistance vs. Gate-to-Source voltage
2.4
RDS(on)- On-Resistance (m )
V
GS
=-10V I
DS
=-4.1A
-V
GS(TH)
- Threshold Voltage (V)
2.2
2.0
1.8
1.6
1.4
1.2
-25
I
DS
= -250uA
0
50
100
0
150
0
25
50
75
0
100
125
150
Temperature ( C)
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Dec,
2011 - Rev.1.
2
WPM3005
1000
1.0
800
V
GS
=0 f=1MHZ
-I
SD
- Source to Drain Current (A)
0.8
C-Capacitance (pF)
T=150 C
0.6
0
600
400
200
Crss
Cout
Cin
0.4
T=25 C
0.2
0
0
0
4
8
12
16
20
0.4
0.5
0.6
0.7
0.8
0.9
-V
DS
- Drain to Source Voltage (V)
-V
SD
- Source to Drain Voltage(V)
Capacitance
Body diode forward voltage
50
100.0
40
T
J(Max)
=150°C
T
A
=25°C
10 s
R
DS(ON)
limited
100 s
Power (W)
30
-I
D
(Amps)
10.0
20
1.0
1s
10s
1ms
10ms
DC
0.1s
10
-V
DS
(Volts)
100
10
0.1
0.1
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
1
Single pulse power
15
Safe operating power
V
DS
=-15V,I
DS
=-5A
12
V
GS
-Gate Voltage
9
6
3
0
0
5
10
15
20
Q
g
(nC)
Gate Charge Characteristics
Will Semiconductor Ltd.
5
Dec,
2011 - Rev.1.
2
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