WPM3407
WPM3407
Single P-Channel, -30 V, -4.4A,Power MOSFET
Description
The WPM3407 uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is suitable for
use in
DC-DC conversion applications. Standard Product
WPM3407 is Pb-free.
Http://www.sh-willsemi.com
3
Features
V
(BR)DSS
−30
V
R
DS(on)
Typ
36 mΩ @
−10
V
53 mΩ @
−4.5
V
1
2
SOT 23-3
pin connections :
P Channel
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
G
1
3
S
2
D
Top View
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150 °C)
a
T
A
=25°C
T
A
=70°C
T
A
=25°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
1.4
0.9
10 S
Steady State Unit
-30
±20
V
Marking:
Drain
3
WP7Z
-
4.4
-
3.5
-
3.7
-
2.9
-20
1.0
0.6
-55 to 150
W
°C
A
1
Pulsed Drain Current
T
A
=70°C
Operating Junction and Storage
Temperature Range
Maximum Power
Dissipation
a
2
Gate
Source
W
P7=
Specific Device Code
Z = Date Code
Order information
Part Number
WPM3407-3/TR
Package
SOT23-3
Shipping
3000Tape&Reel
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.3
WPM3407
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Case Thermal Resistance
t
≤
10 s
Steady State
Steady State
Symbol
R
θJA
R
θJC
Typical
70
90
50
Maximum
90
125
80
°C/W
Unit
a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
Electrical Characteristics
(T = 25°C unless otherwise noted)
J
Parameter
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-source On-Resistance
Forward Recovery Voltage
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate- Source Charge
Gate- Drain Charge
Gate Resistance
Switching Parameters
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
SD
g
FS
Test Condition
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 2 4 V , V
GS
= 0 V
T
J
= 25°C
T
J
= 85°C
Min
-30
Typ
Max
Unit
V
-1
-10
±100
-1.0
-2.0
36
53
-0.5
5
-0.79
8
-3.0
46
66
-1.5
µA
nA
V
mΩ
V
S
V
DS
= 0 V, V
GS
= ±20 V
V
GS
= V
DS
, I
D
= -250 µA
V
GS
= -10V, I
D
=-4.4A
V
GS
= -4.5, I
D
=-3.0A
V
GS
= 0 V, I
S
=-1.0A
V
DS
= -5.0 V, I
D
= -5 A
C
iss
C
oss
C
rss
Q
g(tot)
Q
g(th)
Q
gs
Q
gd
R
g
V
GS
= 0 V, V
DS
= 0 V, f = 1.0 MHz
V
GS
= -10 V, V
DS
= -15 V, I
D
=
-
5 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= -15 V
700
90
75
13
1.5
2
3
950
120
100
18
2
2.5
3.8
5
1200
150
125
23
2.5
3
4.5
8
Ω
nC
pF
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
=-5A, dI/dt=100A/µs
I
F
=-5A, dI/dt=100A/µs
8
11
6
40
7.5
25
14
15
9
50
10
ns
nC
ns
V
GS
= -10 V, V
DS
= -15 V,
I
D
=-4.3A, R
G
=6
Ω
4
30
5
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.3
WPM3407
Typical Performance Characteristis
24
20
I
D
,Drain Current(A)
V
GS
=6V
16
12
8
V
GS
=3V
4
0
V
GS
=4V
R
DS(ON)
ON Resistance(mOhm)
V
GS
=10V
150
120
V
GS
=4.5V
90
60
V
GS
=6V
30
0
5
10
V
GS
=10V
0
V
DS
,Drain-Source voltage(V)
1
2
3
4
5
I
D
, Drain Current(A)
15
20
Drain Current VS Drain-Source voltage
0.20
Drain Current vs ON Resistance
25
V
DS
=-2V
R
DS(ON)
ON Resistance(Ohm)
0.16
I
D
,Drain Current(A)
I
D
=-3A
20
0.12
15
10
0.08
5
0.04
0
0
V
GS
,Gate-Source Voltage(V)
2
4
6
8
10
0
1
V
GS
,Gate-Source Voltage(V)
2
3
4
5
6
Gate-Source Voltage vs ON Resistance
1.6
Normalized On-Resistance
Drain Current VS Gate-Source Voltage
1.4
V
GS
=-10V
V
GS
=-4.5V
1.2
1
I
D
=-3A
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
On-Resistance vs. Junction
Will Semiconductor Ltd.
3
2015/08/25 – Rev. 1.3
WPM3407
10
9
8
7
-V
GS
(Volts)
6
5
4
3
2
1
0
0
2
4
6
8
-Q
g
(nC)
10
12
14
16
V
DS
=-15V
I
D
=-6A
Capacitance (pF)
1200
1000
800
600
400
C
oss
200
C
rss
0
0
5
10
15
-V
DS
(Volts)
20
25
30
C
iss
Gate-Charge Characteristics
100
T
J(Max)
=150°C
T
A
=25°C
10 s
Power (W)
-I
D
(Amps)
10
R
DS(ON)
limited
0.1s
1
100 s
1ms
10ms
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
10
100
0
0.001
30
40
Capacitance Characteristics
T
J(Max)
=150°C
T
A
=25°C
20
10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Maximum Forward Biased Safe
Operating Area (Note E)
10
Normalized Transient
Thermal Resistance
Single Pulse Power Rating Junction-to-
Ambient (Note E)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
R
JA
=40°C/W
JA
.R
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
JA
T
Z
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
Will Semiconductor Ltd.
4
2015/08/25 – Rev. 1.3
WPM3407
Avalanche Energy (Single pulsed) Test Circuit & Waveforms
E
AS
=1/2 L*I
AR2
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.3
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