WPM4801
WPM4801
P-Channel Enhancement Mode MOSFET
www.willsemi.com
Description
The WPM4801 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
PIN CONNECTIONS
S1
1
G1
S2
G2
4
(Top View)
8
D1
D1
D2
D2
Features
-30V/-5.0A,R
DS(ON)
=
37m
@V
GS
= - 10V
-30V/-4.0A,R
DS(ON)
=
45m
@V
GS
= - 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
WPM4801
YYWW
YYWW
= Date Code
WPM4801
= Specific Device Code
Marking Diagram and explain
Order information
WPM4801-8/TR
SOP-8P
2500Tape&Reel
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Page 1
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Dec, 2011 Rev 1.3
WPM4801
Pin Assignment
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Absolute Maximum Ratings
(T
A
=25
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25
T
A
=70
)
T
A
=25
T
A
=70
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
JA
Typical
-30
±12
Unit
V
V
A
A
A
W
-5.6
-4.5
-30
-2.3
2.0
1.2
-55/150
-55/150
62.5
/W
http://www.willsemi.com
Page 2
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Dec, 2011 Rev 1.3
WPM4801
Electrical Characteristics
(T
A
=25
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=85
V
DS
= -5V,V
GS
=-10V
V
GS
=-10V,I
D
=-5.0A
V
GS
=-4.5V,I
D
=-4.0A
V
DS
=-5 V,I
D
=-4.3A
I
S
=-1.0A,V
GS
=0V
-30
-
0.6
-
1.0
-1.4
±100
-1
-10
-25
0.030
0.0366
0.037
0.0
45
12
-0.75
0.050
0.060
V
nA
uA
A
S
-1.5
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,R
L
=15
I
D
-1.0A,V
GEN
=-10V
R
G
=6
V
DS
=-15V,V
GS
=0V
f=1MHz
V
DS
=-15V,V
GS
=-10V
I
D
= -4.3A
10
3.4
1.7
560
100
67
7
10
40
20
15
20
80
40
nS
pF
15
nC
http://www.willsemi.com
Page 3
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Dec, 2011 Rev 1.3
WPM4801
Typical Characteristis
30
24
V
GS
=10V
V
GS
=6V
V
GS
=5V
V
GS
=4.5V
35
30
V
DS
=3V
I
D
,Drain Current(A)
18
12
6
0
V
GS
=3V
I
D
,Drain Current(A)
V
GS
=4V
25
20
15
10
5
0
0
1
2
3
4
5
0
V
DS
,Drain-Source voltage(V)
1
2
3
4
5
V
GS
,Gate-Source Voltage(V)
Drain Current VS Drain-Source voltage
Drain Current VS Gate-Source Voltage
140
I
D
=4.6A,T=25 C
O
2.0
T=25 C
O
R
DSON
Resistance(mohm)
I
S
Source Current(A)
120
1.5
100
1.0
80
0.5
60
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
V
GS
Gate-Source Voltage
V
SD
Source to Drain Voltage
R
DSON
Resistance VS Gate-Source Voltage
Source Current VS Source to Drain Voltage
http://www.willsemi.com
Page 4
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Dec, 2011 Rev 1.3
WPM4801
Typical Characteristis
0.20
R
DSON
Resistance(mohm)
0.15
I
D
=250(uA),V
GS
=V
DS
70
65
60
55
50
45
-40
V
GS
=10V I
D
=4.6A
V
GS(on)
Vaniance(v)
0.10
0.05
0.00
-0.05
-0.10
-0.15
-50 -25
0
25
50
75 100 125 150 175
o
0
40
T
J
Temperature( C)
T
J
Temperature( C)
o
80
120
160
Gate-source voltage vs Temperature
R
DSON
Resistance VS T
J
Temperature
R
DSON
Resistance(ohm)
0.15
V
GS
=6.0V
0.10
V
GS
=4.5V
V
GS
=10V
0.05
0
I
D
,Drain Current(A)
10
20
30
R
DSON
Resistance VS I
D
,Drain Current
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Page 5
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Dec, 2011 Rev 1.3
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