WPMD3002
WPMD3002
Dual P-Channel, -30V, -4.9A, Power MOSFET
V
DS
(V)
-30
Rds(on) ( )
0.049@ V
GS
=-10V
0.070@ V
GS
=-4.5V
Http//:www.willsemi.com
Descriptions
SOP-8L
The WPMD3002 is the Dual P-Channel logic
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize
on-state resistance. These devices are particularly
suited for low voltage application, notebook computer
power management and other battery powered circuits
where high-side switching.
Pin configuration (Top view)
Features
WPM3002
Super high density cell design for extremely low
R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8L package design
YYWW
WPM3002
YY
WW
= Device Code
= Year
= Week
Marking
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Order information
Device
WPMD3002-8/TR
Package
SOP-8L
Shipping
2500/Reel&Tape
Will Semiconductor Ltd.
1
Dec,
2011 - Rev.1.
2
WPMD3002
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
Pulsed Drain Current
c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
P
D
I
D
P
D
I
DM
T
J
T
L
T
stg
-4.9
-3.9
1.9
1.2
-4.5
-3.6
1.6
1.0
-30
150
260
-55 to 150
10 S
Steady State
-30
±20
-3.8
-3.0
1.1
0.7
-3.6
-2.9
1.0
0.6
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
t
t
10 s
10 s
Steady State
Steady State
Steady State
t
t
10 s
10 s
Symbol
R
R
R
JA
Typical
56
87
64
Maximum
65
105
76
115
40
Unit
°C/W
JA
96
32
JC
Dual Operation
Junction-to-Ambient Thermal Resistance
a
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
Steady State
Steady State
Steady State
R
R
R
61
JA
70
112
82
120
45
92
69
°C/W
JA
102
36
JC
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10μs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Will Semiconductor Ltd.
2
Dec,
2011 - Rev.1.
2
WPMD3002
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -10V, I
D
= -4.9A
V
GS
= -10V, I
D
= -3.0A
Drain-to-source On-resistance
R
DS(on)
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -4.5V, I
D
= -3.0A
Forward Transconductance
g
FS
V
DS
= -15 V, I
D
= -3.0A
-1.5
-1.9
49
49
70
70
5.0
-2.5
60
60
90
90
S
m
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V, I
D
= -250uA
V
DS
= -24 V, V
GS
= 0V
V
DS
= 0 V, V
GS
= ±20V
-30
-1
±100
V
uA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
= -1.0A
-0.55
-0.78
-1.50
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= -10 V, V
DS
= -15V,
R
L
=5.0
, R
G
=15
6.8
3.2
25.2
4.4
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= -10 V, V
DS
= -15 V,
I
D
= -4.9 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
-15 V
670
75
62
14.0
1.31
1.80
1.60
nC
pF
Will Semiconductor Ltd.
3
Dec,
2011 - Rev.1.
2
WPMD3002
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
20
15
-I
DS
_Drain to Source Current (A)
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
8
V
DS
= -5V
-I
DS
- Drain Current (A)
12
16
T=-50 C
T=25 C
0
0
12
9
6
T=125 C
0
4
V
GS
= -3.0V
3
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
-V
DS
_Drain to Source Voltage (V)
-V
GS
- Gate to Drain Voltage (V)
Output characteristics
200
140
Transfer characteristics
RDS(on)-
On-Resistance (m )
RDS(on)- On-Resistance (m )
120
100
80
60
40
20
2
3
4
5
6
7
8
9
10
150
100
V
GS
= -4.5V
V
GS
= -10V
I
DS
= -4.9A
50
I
DS
=-3A
0
2
4
6
8
10
12
14
-I
DS
-Drain to Source Current (A)
-V
GS
-Gate to Source Voltage(V)
On-Resistance vs. Drain current
80
70
60
50
40
30
20
-50
On-Resistance vs. Gate-to-Source voltage
2.4
RDS(on)- On-Resistance (m )
V
GS
= -10V
DS
= -4.9A
I
-V
GS(TH)
- Threshold Voltage (V)
2.2
2.0
1.8
1.6
1.4
1.2
-25
I
DS
= -250uA
0
50
100
0
150
0
25
50
75
0
100
125
150
Temperature ( C)
Temperature ( C)
On-Resistance vs. Junction temperature
Threshold voltage vs. Temperature
Will Semiconductor Ltd.
4
Dec,
2011 - Rev.1.
2
WPMD3002
1000
1000
800
V
GS
=0V f=1MHZ
-I
SD
- Source to Drain Current (A)
800
C-Capacitance (pF)
600
T=150 C
600
0
400
200
Crss
Cout
Cin
400
T=25 C
200
0
0
0
4
8
12
16
20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-V
DS
- Drain to Source Voltage (V)
-V
SD
- Source to Drain Voltage(V)
Capacitance
50
Body diode forward voltage
100.0
40
T
J(Max)
=150°C
T
A
=25°C
10 s
R
DS(ON)
limited
100 s
Power (W)
30
-I
D
(Amps)
10.0
20
1.0
1s
10s
1ms
10ms
DC
0.1s
10
-V
DS
(Volts)
100
10
0.1
0.1
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
1
Single pulse power
Safe operating power
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 87 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Will Semiconductor Ltd.
4
Dec,
2011 - Rev.1.
2
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