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WPN252010H4R7MT

精度:±20% 额定电流:1.1A 直流电阻(内阻):276mΩ 电感值:4.7uH

器件类别:无源元件    电感器   

厂商名称:顺络(Sunlord)

厂商官网:http://www.sunlordinc.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
顺络(Sunlord)
包装说明
CHIP
Reach Compliance Code
unknown
ECCN代码
EAR99
大小写代码
1008
构造
Wirewound
型芯材料
FERRITE
直流电阻
0.276 Ω
标称电感 (L)
4.7 µH
电感器应用
POWER INDUCTOR
电感器类型
GENERAL PURPOSE INDUCTOR
功能数量
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-40 °C
封装高度
1 mm
封装长度
2.5 mm
封装形式
SMT
封装宽度
2 mm
包装方法
TR, Embossed, 7 Inch
最大额定电流
1.1 A
自谐振频率
19 MHz
形状/尺寸说明
RECTANGULAR PACKAGE
屏蔽
YES
表面贴装
YES
端子位置
DUAL ENDED
端子形状
ONE SURFACE
测试频率
1 MHz
容差
20%
文档预览
Wire Wound SMD Power Inductors – WPN Series
Operating Temp. : -40℃~+125℃ (Including self-heating)
FEATURES
Fe base metal material core provides large saturation current
Metallization on ferrite core results in excellent shock resistance and damage-free durability
Closed magnetic circuit design reduces leakage flux and Electro Magnetic Interference (EMI)
Low DCR decreases power loss, small and slim take up less PCB real estate
Automatic production ensures high quality and consistency
APPLICATIONS
Smart phone
Blue -ray disc recorders, set top box
Notebooks, desktop computers, servers
Portable gaming devices, personal navigation systems, personal multimedia devices
PRODUCT IDENTIFICATION
WPN
WPN
252012
Type
H
2R2
M
(L×W×H) [mm]
T
□□□
External Dimensions (L×W×H) [mm]
Wire Wound SMD Power Inductor
Feature Type
201610
201612
252010
H Type
M Type
U Type
E Type
252012
3012
4012
4020
2.0×1.6×1.0
2.0×1.6×1.2
2.5×2.0×1.0
2.5×2.0×1.2
3.0×3.0×1.2
4.0×4.0×1.2
4.0×4.0×2.0
H
M
U
E
R47
2R2
Nominal Inductance
Nominal Value
0.47μH
2.2μH
Example
T
Packing
Tape & Reel
N
M
Inductance Tolerance
±30%
±20%
□□□
Design Code
Design Code
* Standard product is blank
Sunlord
The Specifications subject to change without notice. Please check our website for latest information.
Revised 2016/07/21
Sunlord Industrial Park, Dafuyuan Industrial Zone, Guanlan, Shenzhen, China 518110
Tel:
0086-755-29832660
Fax:
0086-755-82269029
E-Mail:
sunlord@sunlordinc.com
SHAPE AND DIMENSIONS
Fig.1
Fig.2
Mark
Fig.3
Fig.4
Mark
Mark
Fig.5
Mark
Recommended Land Pattern
Unit: mm
Series
WPN201610H
WPN201610M
WPN201610U
WPN201612
WPN252010
WPN252012H
WPN252012E
WPN3012
WPN4012
WPN4020
Shape
Fig.1
Fig.2
Fig.3
Fig.1
Fig.1
Fig.1
Fig.1
Fig.4
Fig.5
Fig.5
A
2.0±0.2
2.0±0.2
2.0±0.2
2.0±0.2
2.5±0.2
2.5±0.2
2.5±0.2
3.0±0.2
4.0±0.2
4.0±0.2
B
1.6±0.2
1.6±0.2
1.6±0.2
1.6±0.2
2.0±0.2
2.0±0.2
2.0±0.2
3.0±0.2
4.0±0.2
4.0±0.2
C
1.0 Max.
1.0 Max.
1.0 Max.
1.2 Max.
D
1.5±0.2
1.2±0.2
1.6±0.2
1.2±0.2
E
0.6±0.2
0.6±0.2
0.6±0.2
0.6±0.2
0.8±0.2
0.8±0.2
0.8±0.2
0.75±0.2
0.95±0.2
0.95±0.2
F
0.8±0.2
0.8±0.2
0.8±0.2
0.8±0.2
0.8±0.2
0.8±0.2
0.8±0.2
1.5±0.2
2.1±0.2
2.1±0.2
a Typ.
0.7
0.7
0.7
0.7
0.8
0.8
0.8
1.5
1.9
1.9
b Typ.
0.7
0.7
0.7
0.7
0.85
0.85
0.85
0.8
1.1
1.1
c Typ.
1.7
1.7
1.7
1.7
2.0
2.0
2.0
3.2
3.7
3.7
1.0 Max. 1.65±0.2
1.2 Max. 1.65±0.2
1.2 Max. 1.65±0.2
1.2 Max.
1.2 Max.
2.0 Max.
2.6±0.2
3.1±0.2
3.1±0.2
Sunlord
The Specifications subject to change without notice. Please check our website for latest information.
Revised 2016/07/21
Sunlord Industrial Park, Dafuyuan Industrial Zone, Guanlan, Shenzhen, China 518110
Tel:
0086-755-29832660
Fax:
0086-755-82269029
E-Mail:
sunlord@sunlordinc.com
SPECIFICATIONS
WPN201610H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN201610HR24MT
WPN201610HR47MT
WPN201610HR68MT
WPN201610H1R0MT
WPN201610H1R0MTY01
WPN201610H1R5MT
WPN201610H2R2MT
WPN201610H4R7MT
WPN201610H100MT
μH
L
0.24±20%
0.47±20%
0.68±20%
1.0±20%
1.0±20%
1.5±20%
2.2±20%
4.7±20%
10±20%
DC Resistance
Max.
DCR
0.040 0.033
0.049 0.041
0.065 0.057
0.090 0.075
0.070 0.060
0.130 0.110
0.170 0.142
0.425 0.370
0.826 0.688
Typ.
Self-resonant
Frequency
Min.
MHz
S.R.F
145
102
77
70
65
45
39
25
15
Self-resonant
Frequency
Min.
MHz
S.R.F
160
120
107
92
52
41
Self-resonant
Frequency
Min.
MHz
S.R.F
250
121
110
78
63
50
44
21
Self-resonant
Frequency
Min.
MHz
S.R.F
116
95
84
60
42
5.85
5.15
3.95
2.70
1.90
9.50
5.50
4.50
3.20
3.00
2.80
1.80
1.30
5.90
5.50
4.30
3.60
3.35
1.80
4.50
4.00
3.50
3.35
2.60
1.95
1.90
1.20
0.80
Saturation Current
Max.
A
Isat
5.50
4.70
4.00
3.85
3.05
2.30
2.15
1.50
0.95
3.00
2.70
2.50
2.05
2.20
1.70
1.45
0.90
0.65
Typ.
Heat Rating Current
Max.
A
Irms
3.45
3.10
2.80
2.35
2.55
2.00
1.70
1.00
0.75
Typ.
WPN201610M Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN201610MR24MT
WPN201610MR33MT
WPN201610MR47MT
WPN201610MR68MT
WPN201610M1R0MT
WPN201610M2R2MT
μH
L
0.24±20%
0.33±20%
0.47±20%
0.68±20%
1.0±20%
2.2±20%
DC Resistance
Max.
DCR
0.026 0.022
0.038 0.032
0.044 0.037
0.060 0.050
0.090 0.075
0.160 0.135
Typ.
Saturation Current
Max.
A
Isat
6.80
6.00
5.20
4.20
3.85
2.00
4.35
3.40
3.00
2.60
2.05
1.60
Typ.
Heat Rating Current
Max.
A
Irms
4.80
3.80
3.30
3.00
2.35
1.75
Typ.
WPN201610U Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN201610UR12MT
WPN201610UR33MT
WPN201610UR47MT
WPN201610UR68MT
WPN201610U1R0MT
WPN201610U1R5MT
WPN201610U2R2MT
WPN201610U4R7MT
μH
L
0.12±20%
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
4.7±20%
DC Resistance
Max.
DCR
0.015 0.012
0.025 0.022
0.033 0.028
0.045 0.037
0.060 0.050
0.110 0.095
0.120 0.100
0.288 0.240
Typ.
Saturation Current
Max.
A
Isat
11.00
6.00
5.00
3.70
3.50
3.20
2.10
1.50
5.60
4.10
3.60
3.10
2.60
2.00
1.90
1.25
Typ.
Heat Rating Current
Max.
A
Irms
6.50
4.70
4.10
3.60
3.00
2.30
2.20
1.45
Typ.
WPN201612H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN201612HR24MT
WPN201612HR33MT
WPN201612HR47MT
WPN201612H1R0MT
WPN201612H1R5MT
μH
L
0.24±20%
0.33±20%
0.47±20%
1.0±20%
1.5±20%
DC Resistance
Max.
DCR
0.023 0.019
0.031 0.026
0.041 0.034
0.059 0.049
0.109 0.091
Typ.
Saturation Current
Max.
A
Isat
6.75
6.00
4.60
3.10
2.35
4.50
3.85
3.40
2.70
2.10
Typ.
Heat Rating Current
Max.
A
Irms
5.20
4.45
3.90
3.00
2.45
Typ.
Sunlord
The Specifications subject to change without notice. Please check our website for latest information.
Revised 2016/07/21
Sunlord Industrial Park, Dafuyuan Industrial Zone, Guanlan, Shenzhen, China 518110
Tel:
0086-755-29832660
Fax:
0086-755-82269029
E-Mail:
sunlord@sunlordinc.com
SPECIFICATIONS
Part Number
Inductance
@1MHz
Units
Symbol
WPN201612H2R2MT
μH
L
2.2±20%
DC Resistance
Max.
DCR
0.146 0.122
Typ.
Self-resonant
Frequency
Min.
MHz
S.R.F
32
Self-resonant
Frequency
Min.
MHz
S.R.F
117
80
65
46
40
26
24
19
12
Self-resonant
Frequency
Min.
MHz
S.R.F
117
104
89
67
52
38
32
36
25
23
16
14
Self-resonant
Frequency
Min.
MHz
S.R.F
52
92
52
4.50
7.00
4.50
6.50
5.30
4.90
3.70
3.60
2.90
2.60
2.30
1.70
1.60
1.15
1.10
4.80
4.40
3.20
3.10
2.60
1.90
1.60
1.30
0.90
1.70
Saturation Current
Max.
A
Isat
2.00
1.80
Typ.
Heat Rating Current
Max.
A
Irms
2.05
Typ.
WPN252010H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN252010HR33MT
WPN252010HR47MT
WPN252010HR68MT
WPN252010H1R0MT
WPN252010H1R5MT
WPN252010H2R2MT
WPN252010H3R3MT
WPN252010H4R7MT
WPN252010H100MT
μH
L
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
3.3±20%
4.7±20%
10±20%
DC Resistance
Max.
DCR
0.039 0.033
0.045 0.038
0.059 0.049
0.076 0.063
0.106 0.088
0.155 0.129
0.235 0.196
0.276 0.230
0.500 0.435
Typ.
Saturation Current
Max.
A
Isat
5.50
5.20
3.60
3.50
3.00
2.20
1.80
1.50
1.00
3.50
3.20
2.75
2.50
2.00
1.50
1.20
1.10
0.80
Typ.
Heat Rating Current
Max.
A
Irms
4.05
3.70
3.20
2.90
2.30
1.80
1.40
1.30
0.90
Typ.
WPN252012H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN252012HR24MT
WPN252012HR33MT
WPN252012HR47MT
WPN252012HR68MT
WPN252012H1R0MT
WPN252012H1R5MT
WPN252012H2R2MT
WPN252012H2R2MTY01
WPN252012H3R3MT
WPN252012H4R7MT
WPN252012H6R8MT
WPN252012H100MT
μH
L
0.24±20%
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
2.2±20%
2.2±20%
3.3±20%
4.7±20%
6.8±20%
10±20%
DC Resistance
Max.
DCR
0.023 0.019
0.028 0.023
0.035 0.029
0.043 0.036
0.054 0.048
0.072 0.060
0.120 0.100
0.102 0.085
0.163 0.136
0.260 0.225
0.366 0.305
0.480 0.435
Typ.
Saturation Current
Max.
A
Isat
7.80
6.20
5.60
4.30
4.20
3.50
3.00
2.70
2.10
1.90
1.35
1.35
4.05
3.70
3.45
3.15
3.00
2.40
1.90
2.10
1.80
1.25
0.95
0.85
Typ.
Heat Rating Current
Max.
A
Irms
4.70
4.30
4.00
3.60
3.40
2.80
2.15
2.40
2.05
1.45
1.10
1.00
Typ.
WPN252012E Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN252012E1R0MT
WPN252012ER47MT
WPN252012E1R0MT
μH
L
1.0±20%
0.47±20%
1.0±20%
DC Resistance
Max.
DCR
0.044 0.037
0.032 0.026
0.044 0.037
Typ.
Saturation Current
Max.
A
Isat
5.00
8.00
5.00
3.50
4.10
3.50
Typ.
Heat Rating Current
Max.
A
Irms
3.90
4.70
3.90
Typ.
Sunlord
The Specifications subject to change without notice. Please check our website for latest information.
Revised 2016/07/21
Sunlord Industrial Park, Dafuyuan Industrial Zone, Guanlan, Shenzhen, China 518110
Tel:
0086-755-29832660
Fax:
0086-755-82269029
E-Mail:
sunlord@sunlordinc.com
SPECIFICATIONS
WPN3012H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN3012HR33MT
WPN3012HR47MT
WPN3012HR68MT
WPN3012H1R0MT
μH
L
0.33±20%
0.47±20%
0.68±20%
1.0±20%
DC Resistance
Max.
DCR
0.027 0.023
0.033 0.028
0.042 0.035
0.054 0.045
Typ.
Self-resonant
Frequency
Min.
MHz
S.R.F
107
86
63
51
Self-resonant
Frequency
Min.
MHz
S.R.F
37
28
25
20
16
12
Self-resonant
Frequency
Min.
MHz
S.R.F
113
96
70
55
56
48
38
28
23
19
17
12
7
Self-resonant
Frequency
Min.
MHz
S.R.F
108
72
57
37
30
18.70
13.40
8.70
8.70
7.70
10.30
9.10
5.50
5.70
4.50
4.00
3.90
2.80
2.80
2.30
1.60
1.55
1.05
3.40
2.80
2.20
2.00
1.60
1.20
7.20
6.80
5.80
4.20
Saturation Current
Max.
A
Isat
8.90
8.00
6.80
5.40
4.20
3.90
3.40
2.70
Typ.
Heat Rating Current
Max.
A
Irms
4.85
4.50
3.90
3.10
Typ.
WPN3012H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN3012H1R5MT
WPN3012H2R2MT
WPN3012H3R3MT
WPN3012H4R7MT
WPN3012H6R8MT
WPN3012H100MT
μH
L
1.5±20%
2.2±20%
3.3±20%
4.7±20%
6.8±20%
10±20%
DC Resistance
Max.
DCR
0.074 0.064
0.108 0.090
0.155 0.129
0.235 0.196
0.340 0.290
0.474 0.395
Typ.
Saturation Current
Max.
A
Isat
4.10
3.35
2.60
2.50
1.90
1.45
2.50
2.05
1.70
1.30
1.10
1.00
Typ.
Heat Rating Current
Max.
A
Irms
2.90
2.35
2.00
1.50
1.25
1.15
Typ.
WPN4012H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN4012HR33MT
WPN4012HR47MT
WPN4012HR68MT
WPN4012H1R0MT
WPN4012H1R0MTY01
WPN4012H1R2MT
WPN4012H1R5MT
WPN4012H2R2MT
WPN4012H3R3MT
WPN4012H4R7MT
WPN4012H6R8MT
WPN4012H100MT
WPN4012H220MT
μH
L
0.33±20%
0.47±20%
0.68±20%
1.0±20%
1.0±20%
1.2±20%
1.5±20%
2.2±20%
3.3±20%
4.7±20%
6.8±20%
10±20%
22±20%
DC Resistance
Max.
DCR
0.032 0.027
0.041 0.034
0.041 0.034
0.059 0.049
0.049 0.041
0.059 0.049
0.070 0.058
0.079 0.066
0.125 0.104
0.166 0.138
0.226 0.188
0.335 0.279
0.679 0.566
Typ.
Saturation Current
Max.
A
Isat
11.50
9.90
6.35
6.60
5.30
4.80
4.60
3.30
3.30
2.60
2.20
1.85
1.30
4.30
3.80
3.80
3.20
3.60
3.20
2.90
2.70
2.10
1.90
1.60
1.30
0.90
Typ.
Heat Rating Current
Max.
A
Irms
4.90
4.40
4.40
3.70
4.20
3.70
3.30
3.10
2.50
2.20
1.85
1.50
1.05
Typ.
WPN4020H Series
Part Number
Inductance
@1MHz
Units
Symbol
WPN4020HR22MT
WPN4020HR47MT
WPN4020HR68MT
WPN4020H1R0MT
WPN4020H1R5MT
μH
L
0.22±20%
0.47±20%
0.68±20%
1.0±20%
1.5±20%
DC Resistance
Max.
DCR
0.013 0.011
0.022 0.018
0.022 0.018
0.026 0.022
0.036 0.030
Typ.
Saturation Current
Max.
A
Isat
22.00
15.50
11.10
11.10
9.60
8.20
6.40
6.40
5.80
5.20
Typ.
Heat Rating Current
Max.
A
Irms
9.50
7.40
7.40
6.70
6.00
Typ.
Sunlord
The Specifications subject to change without notice. Please check our website for latest information.
Revised 2016/07/21
Sunlord Industrial Park, Dafuyuan Industrial Zone, Guanlan, Shenzhen, China 518110
Tel:
0086-755-29832660
Fax:
0086-755-82269029
E-Mail:
sunlord@sunlordinc.com
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谁有关于智能车的书,s12的单片机介绍。本人参加了这届智能车比赛,现在还是菜鸟一个。对于定时器啊,PWM是怎么用的,有代码给点更好...基于s12单片机的智能车建议楼主去凌阳官网看看他们的小车和上面03、05、07年,每年都有电子大赛的论文和源代码WWW.UNSP.COM或者WWW.UNCP.COM.CN对于对车,的确很有用。PWM是脉宽调制,可以实现直流电机的调速,当然还用于控制步进电机。http://www.unsp.com/activity/09race/race.as...
dzt 嵌入式系统
(5)基于GD32L233C-START的低功耗远程数据监控系统
【GD32L233C-START评测】(5)基于GD32L233C-START的低功耗远程数据监控系统本次评测是《评测2-4》的综合,集片内资源LPUART、LPTIMER、硬件过采样ADC、低功耗而成的低功耗远程数据监控系统。体验了GD32L233C独特的低功耗特性。使用了拓普微HMT070ETD-1D智能模块作为终端,而GD32L233C-START通过LPUART与HMT070ETD-1D智能模块进行远程通讯。GD32L233C工作于deepsle...
wenyangzeng GD32 MCU
迪文86盒数据资料分享
现在很多客户对于迪文86和产品的开发与相应的数据无从下手,本贴将最新手机的86盒数据手册打包汇总,供有需要的用户下载了解,欢迎批评指正。迪文86盒数据资料分享有不明白的,欢迎留言咨询有不明白的可以回帖咨询哦...
DWIN_IOT 下载中心专版
如何枚举出同级的所有驱动设备地址?
如何枚举出同级的所有驱动设备地址?比如:DEVICETREE中Driver\\Kbdclass\\Device\\keyboardclass0\\Device\\keyboardclass1\\Device\\keyboardclass2\\Device\\keyboardclass3假如现在知道KEYBOARDCLASS2的DeviceObject.如何得到其他keyboardclassX的DeviceObject?谢谢如何枚举出同...
keye200 嵌入式系统
borland c++6.0编译ucos 出错误
OS_CPU_C.C(264):E2342Typemismatchinparameter\'__src\'(wanted\'constvoid*\',got\'int\')264---memcpy(*ppbos,MK_FP(_SS,0),384);borlandc++6.0编译ucos出错误检查你的ppbos的定义....应当是void**ppbos才行....要不就是MK_FP宏有问题...parameter\'__src\'....
第八个音符 实时操作系统RTOS