WS3202E
WS3202E
Over voltage and over current protection IC
Http//:www.sh-willsemi.com
Descriptions
The WS3202E is an Over-Voltage-Protection
(OVP) and Over-Current-Protection (OCP) device. The
device will switch off internal MOSFET to disconnect
IN to OUT to protect load when any of input voltage,
input current over the threshold. The Over temperature
protection (OTP) function monitors chip temperature to
protect the device.
The WS3202E is available in SOT-23-6L package.
Standard products are Pb-free and Halogen-free.
GND
6
GND
5
OUT
4
SOT-23-6L
Features
High voltage technology
Maximum input voltage
Output power ON time
OVP threshold
OVP response time
OCP threshold
Output discharge
Package
: SOT-23-6L
: 25V
: 8ms (Typ.)
: 6.1V (Typ.)
: <1us
: 2A (Min.)
1
GND
2
GND
3
IN
Pin configuration (Top view)
6
5
4
WS61
TYWW
1
2
3
WS61
= Device code
= Series code
= Year
= Week
Marking
Applications
GPS
PMP
MID
PAD
Digital cameras
Digital Videos
Device
T
Y
WW
Order information
Package
SOT-23-6L
Shipping
3000/Reel&Tape
WS3202E61-6/TR
Will Semiconductor Ltd.
1
Mar, 2014 - Rev. 1.4
WS3202E
Typical applications
Pin descriptions
Pin No.
WS3202
Adaptor
1uF/50V
3
IN
GND
1,2,5,6
OUT
4
1uF
To Load
Symbol
GND
Descriptions
Power ground
Input pin, connect to AC
adaptor or VBUS. A 1uF low
ESR ceramic capacitor or
larger must be connected
as close as to this pin. It is
recommended to use 50V
capacitor or according to
application.
1, 2, 5, 6
3
IN
3
OUT
Output pin, Connect to load.
Block diagram
IN
OUT
Charge Pump
OCP
Control
Logic
Vref
OTP
GND
Will Semiconductor Ltd.
2
Mar, 2014 - Rev. 1.4
WS3202E
Absolute maximum ratings
Parameter
Input voltage (IN pin)
Output voltage (OUT pin)
Power dissipation * *
Power dissipation * *
Thermal resistance *
Thermal resistance *
1 3
2 3
1
2
Symbol
V
IN
V
OUT
P
D
R
θJA
T
J
T
L
Tstg
HBM
MM
Value
-0.3 ~ 25
-0.3 ~ 6.5
0.5
0.3
250
416
150
260
-55 ~ 150
±8000
±1000
Unit
V
V
W
W
o
o
C/W
C/W
o
o
o
Junction temperature
Lead temperature(10s)
Storage temperature
ESD Ratings
C
C
C
V
V
Note:
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
*1:
Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper
*2:
Surface mounted on FR-4 board using minimum pad size, 1oz copper
*3:
Power dissipation is calculated by P
D
= (V
IN
-V
OUT
) x I
OUT
Recommend operating conditions
(Ta=25
o
C, unless otherwise noted)
Parameter
Input voltage
Output current
Ambient operating temperature
Symbol
V
IN
I
OUT
Topr
Value
3 ~ 24
1.5
-40 ~ 85
Unit
V
A
o
C
Will Semiconductor Ltd.
3
Mar, 2014 - Rev. 1.4
WS3202E
Electronics Characteristics
(Ta=25
o
C, unless otherwise noted)
Parameter
Input quiescent current
IN-to-OUT ON resistance *
3
Symbol
I
Q
R
ON
R
DISCHARGE
UVLO
V
HYS-UVLO
T
ON
V
OVP
V
HYS-OVP
T
OVP
T
ON(OVP)
I
OCP
Test conditions
V
IN
=5V, I
OUT
=0A
V
IN
=5V, I
OUT
=0.7A
V
IN
increasing from 0~3V
V
IN
decreasing from 3~0V
V
IN
= 0 -> 5V to output ON
V
IN
increasing from 5~7V
V
IN
decreasing from 7~5V
V
IN
= 5 -> 10V
V
IN
= 10 -> 5V to output ON
Min.
Typ.
280
190
500
Max.
350
220
2.8
Unit
uA
mΩ
Ω
V
mV
ms
V
mV
us
ms
A
DC characteristics and Power-ON-Reset
Output discharge resistance
Under voltage lock out threshold
Under voltage lock out hysteresis
Output power-on time
2.3
200
6
5.8
200
6
2.0
165
40
250
8
6.1
300
8
300
10
6.4
400
1
10
Input Over-Voltage-Protection (OVP)
OVP threshold
OVP hysteresis
OVP active time
OVP recovery time
OCP threshold
Over-Temperature-Protection (OTP)
OTP threshold
OTP hysteresis
*3: Single Pulse, Pulse width=10ms
o
o
Input Over-Current-Protection (OCP)
C
C
Will Semiconductor Ltd.
4
Mar, 2014 - Rev. 1.4
WS3202E
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
6.2
6.1
6.0
5.9
5.8
5.8
5.7
-50
V
IN
Increasing
2.8
2.7
OVP Threshold, V
OVP
(V)
OCP Threshold, I
OCP
(A)
50
75
o
2.6
2.5
2.4
2.3
2.2
2.1
2.0
-50
-25
0
25
50
75
o
V
IN
Decreasing
-25
0
25
100
125
100
125
Temperature, T
A
( C)
OVP threshold vs. Temperature
2.8
Temperature, T ( C)
A
OCP threshold vs. Temperature
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
-50
-25
0
25
50
I
OUT
= 0.7A
DC
75
o
UVLO Threshold, V
UVLO
(V)
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
-50
-25
0
25
50
75
o
V
IN
Increasing
V
IN
Decreasing
ON Resistance, R
ON
(
)
100
125
100
125
Temperature, T
A
( C)
UVLO threshold vs. Temperature
6.0
5.5
V
IN
=5V
I
OUT
=DC Current
Temperature, T
A
( C)
IN-to-OUT ON resistance vs. Temperature
0.34
0.32
0.30
V
IN
=5V
I
OUT
=DC Current
Output Voltage, V
OUT
(V)
ON Resistance, R
ON
(
)
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
T
A
=85 C
O
5.0
T
A
=-40 C
4.5
4.0
3.5
3.0
T
A
=25 C
O
O
O
T
A
=25 C
O
T
A
=85 C
T
A
=-40 C
O
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Load Current, I
OUT
(mA)
Output voltage vs. Output current
Load Current, I
OUT
(mA)
ON resistance vs. Output current
Will Semiconductor Ltd.
5
Mar, 2014 - Rev. 1.4
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