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WS4603E

WS4603E 负载开关 电源管理芯片

器件类别:电源管理   

厂商名称:韦尔(WILLSEMI)

厂商官网:http://www.willsemi.com/

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WS4603
WS4603
80mΩ,Adjustable Current Limit,
Power Distribution Switch
Descriptions
The WS4603 is high-side switch with ultra-low ON
resistance P-MOSFET. Integrated current-limit function
can limit inrush current for heave capacitive load, over
load current, and short-circuit current to protect power
source.
SOT-23-5L
The WS4603 is also integrated reverse protection
function to eliminate any reverse current flow across
the
switch
when
the
device
is
off.
Output
auto-discharge while the device shutdown made
output voltage off quickly. Thermal shutdown function
can protect the device and load.
The WS4603 is available in SOT-23-5L package.
Standard product is Pb-free and Halogen-free.
Http//:www.sh-willsemi.com
Features
Input voltage range
Main switch R
ON
Adj. current limit range
Current limit accurate
Auto discharge
Reverse block (No “body diode”)
Over temperature protection
: 2.5~5.5
: 80mΩ @ V
IN
=5V
: 0.4~2A (Typ.)
: +/-20%
Pin configuration (Top view)
Applications
USB peripherals
USB Dongle
USB 3G data card
3.3V or 5V Power Switch
3.3V or 5V Power Distribution
4603
YY
WW
= Device code
= Year code
= Week code
Marking
Order information
Device
WS4603E-5/TR
Package
SOT-23-5L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Nov, 2014 - Rev. 1.1
WS4603
Typical Applications
Pin Descriptions
Pin Number
1
2
3
4
5
Symbol
OUT
GND
ISET
EN
IN
Output Pin
Ground
Current limit setting
Enable Pin, Active High
Input Pin
Descriptions
Block Diagram
Will Semiconductor Ltd.
2
Nov, 2014 - Rev. 1.1
WS4603
Absolute maximum ratings
Parameter
IN pin voltage range
OUT pin voltage range
ISET pin voltage range
EN pin voltage range
Junction temperature
Lead temperature(Soldering, 10s)
Storage temperature
IN, OUT Pin ESD Ratings
ISET, EN Pin ESD Ratings
Symbol
V
IN
V
OUT
V
FLG
V
EN
T
J
T
L
Tstg
HBM
MM
HBM
MM
Value
-0.3½6.5
-0.3~6.5
-0.3~6.5
-0.3~6.5
-40~150
260
-55 ~ 150
8000
400
4000
400
Unit
V
V
V
V
o
o
C
C
o
C
V
V
V
V
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
Recommend Operating Conditions
Parameter
Supply input voltage range
Operating ambient temperature
Thermal Resistance
Symbol
V
IN
T
A
R
θJA
Value
2.5½5.5
-40½85
250
o
Unit
V
o
C
C/W
Will Semiconductor Ltd.
3
Nov, 2014 - Rev. 1.1
WS4603
Electronics Characteristics
(Ta=25
o
C, V
IN=
5V, C
IN
=C
OUT
=1uF, unless otherwise noted)
Parameter
Quiescent supply current
Shutdown current
Reverse current
Main-FET ON resistance
(1)
Auto-discharge FET ON resistance
Over-current trip threshold
Short-circuit output current
Over-current threshold range
Short circuit current limiting response
time
EN input low voltage
EN input high voltage
OUT pin turn-on time after EN ON
Over-temperature shutdown threshold
Over-temperature threshold hysteresis
Under voltage lock out threshold
Under voltage lock out hysteresis
Note :
(1) Pulse test, T
P
=380us
Symbol
I
Q
I
SD
I
REV
R
ON
R
DCHG
I
OC
I
OS
Ioc(min)
Ioc(max)
t
SHORT
V
IL
V
IH
t
ON
T
SD
T
HYS
V
UVLO
V
UVLO-HYS
Conditions
I
OUT
=0, V
IN
=V
EN
=5V
V
EN
=0V
V
IN
=V
EN
=0V, V
OUT
=5V,
Current flow to V
IN
V
IN
=V
EN
=5V,
I
OUT
=500mA
V
EN
=0V,
V
IN
=V
OUT
=5V
Rset=6.8K
OUT shorted to
GND,Rset=6.8K
Min.
Typ.
48
Max.
60
1
1
Units
uA
uA
uA
Ω
80
65
0.8
1
0.45
0.4
2
1.2
A
A
A
A
us
OUT connected to
GND,C
L
=1uF
VIN=5V
VIN=5V
C
L
=1uF, R
L
=5ohm
2.0
3
0.4
20
160
35
2.2
200
V
V
us
o
o
C
C
V
mV
Will Semiconductor Ltd.
4
Nov, 2014 - Rev. 1.1
WS4603
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
Output Voltage vs. Output Current
Output Voltage vs. Output Current
Output Voltage vs. Output Current
Current Limit vs. Input voltage
Current Limit vs. Input voltage
Current Limit vs. Input voltage
Will Semiconductor Ltd.
5
Nov, 2014 - Rev. 1.1
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