WS4611
WS4611
80mΩ, Current Limited, Power Distribution Switch
www.sh-willsemi.com
Descriptions
The WS4611 is high-side switch with ultra-low ON
resistance P-MOSFET. Integrated current-limit function
can limit inrush current for heave capacitive load, over
load current, and short-circuit current to protect power
source.
SOT-23-5L
The WS4611 is also integrated reverse protection
function to eliminate any reverse current flow across
the switch when the device is off. Thermal shutdown
function can protect the device and load. The output
auto-discharge function is disabled in WS4611.
The WS4611 is available in SOT-23-5L package.
Standard product is Pb-free and Halogen-free.
Features
Input voltage range
Main switch R
ON
Current limit threshold
-
WS4611EB
: 1.0A (Typ.)
Reverse block (No “body diode”)
Over temperature protection
: 2.5~5.5V
: 80mΩ @ V
IN
=5V
Pin configuration (Top view)
Applications
USB peripherals
USB Dongle
USB 3G data card
3.3V or 5V Power Switch
3.3V or 5V Power Distribution
Marking
4611
EB
Y
W
= Device code
= Special code
= Year code
= Week code
Order information
Device
WS4611EB-5/TR
Package
SOT-23-5L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2019 - Rev. 1.3
WS4611
Typical Applications
Pin Descriptions
Pin Number
1
2
3
4
5
Symbol
OUT
GND
FLG
EN
IN
Output Pin
Ground
Fault Flag Pin, Open-Drain, Active Low
Enable Pin, Active High
Input Pin
Descriptions
Block Diagram
Will Semiconductor Ltd.
2
Aug, 2019 - Rev. 1.3
WS4611
Absolute maximum ratings
Parameter
IN pin voltage range
OUT pin voltage range
FLG pin voltage range
EN pin voltage range
Junction temperature
Lead temperature(Soldering, 10s)
Storage temperature
IN, OUT Pin ESD Ratings
FLG, EN Pin ESD Ratings
Symbol
V
IN
V
OUT
V
FLG
V
EN
T
J
T
L
Tstg
HBM
MM
HBM
MM
Value
-0.3½6.5
-0.3~6.5
-0.3~6.5
-0.3~6.5
-40~150
260
-55 ~ 150
8000
400
4000
400
Unit
V
V
V
V
o
o
C
C
o
C
V
V
V
V
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
Recommend Operating Conditions
Parameter
Supply input voltage range
Operating ambient temperature
Thermal Resistance
Symbol
V
IN
T
A
R
θJA
Value
2.5½5.5
-40½85
250
o
Unit
V
o
C
C/W
Will Semiconductor Ltd.
3
Aug, 2019 - Rev. 1.3
WS4611
Electronics Characteristics
(Ta=25
o
C, V
IN=
5V, C
IN
=C
OUT
=1μF, unless otherwise noted)
Parameter
Quiescent supply current
Shutdown current
Reverse current
Main-FET ON resistance
(1)
Auto-discharge FET ON
resistance
Over-current trip threshold
Symbol
I
Q
I
SD
I
REV
R
ON
R
DCHG
Conditions
I
OUT
=0, V
IN
=V
EN
=5V
V
EN
=0V
V
IN
=V
EN
=0V, V
OUT
=5V,
Current flow to V
IN
V
IN
=V
EN
=5V, I
OUT
=500mA
V
EN
=0V,
V
IN
=V
OUT
=5V
Current ramp (≤100A/s) on
OUT
OUT shorted to GND
OUT connected to GND，
C
L
=1
μ
F
VIN=5V
VIN=5V
C
L
=1
μ
F, R
L
=5ohm
1.6
20
9
160
35
2.2
200
0.7
80
65
Min.
Typ.
48
Max.
60
1
1
Units
μ
A
μ
A
μ
A
mΩ
Ω
I
OC
1
1.4
A
Short-circuit output current
Short circuit current limiting
response time
EN input low voltage
EN input high voltage
OUT pin turn-on time after EN ON
Fault flag output blanking time
Over-temperature shutdown
threshold
Over-temperature threshold
hysteresis
Under voltage lock out threshold
Under voltage lock out hysteresis
Note: (1) Pulse test, T
P
=380us
I
OS
t
SHORT
V
IL
V
IH
t
ON
t
BLANK
T
SD
T
HYS
V
UVLO
V
UVLO-HYS
0.45
2
0.4
A
μ
s
V
V
μ
s
ms
o
C
C
o
V
mV
Will Semiconductor Ltd.
4
Aug, 2019 - Rev. 1.3
WS4611
Typical Characteristics
(Ta=25
o
C, unless otherwise noted)
ON Resistance vs. Input Voltage
ON Resistance vs. Temperature
Quiescent current vs. Input Voltage
Quiescent current vs. Temperature
Shut-down Current vs. Temperature
Will Semiconductor Ltd.
5
Shut-down Current vs. Input Voltage
Aug, 2019 - Rev. 1.3
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