WS7918DC
WS7918DC
CMOS High Gain GPS LNA
Descriptions
The WS7918DC is a low noise amplifier (LNA) for GPS
receiver applications, available in a small 6-pin DFN
package. The WS7918DC requires only one external
inductor for input matching.
The WS7918DC is designed to achieve low power
dissipation and good performance.
DFN1109-6L (Bottom view)
http//:www.sh-willsemi.com
Features
Operating frequency: 1550 MHz to 1615 MHz
Noise figure = 0.65 dB
Gain = 16.5 dB
Input 1 dB compression point = -5.0 dBm
Out-band input IP3 = +5.0 dBm
Supply voltage: 1.6 V to 3.1 V
Integrated supply decoupling capacitor
Supply current: 7.5 mA
Power-down mode leakage current < 10μA
One external matching inductor required
Output decoupled to ground
ESD protection: HBM > 2.0kV for all pins
Integrated input/output DC block capacitor
Integrated output matching
Package: 6-pin DFN, 1.1 x 0.9 x 0.45 mm
Process: CMOS
3
GND
VCC
RFOUT
1
2
3
6
5
4
EN
RFIN
GNDRF
Pin configuration (Top view)
O
*
O
*
= Device code
= Month code（A~Z）
Marking (Top view)
Applications
Cell phones
Tablets
Other RF front-end modules
Device
WS7918DC-6/TR
Order information
Package
DFN1109-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Jan, 2018 - Rev. 1.6
WS7918DC
Pinning Information
Pin
1
2
3
4
5
6
Description
GND
VCC
RFOUT
GNDRF
RFIN
EN
RFOUT
3
4
GNDRF
GND
VCC
1
2
6
5
EN
RFIN
Transparent top view
Symbol view
Application Information
Symbol
U1
C1
C2
L1
Description
WS7918DC
Capacitor
Capacitor
Inductor
Footprint
1.1x0.9x0.45 mm
0402
0402
0402
3
Value
NA
1 nF
1 nF
10 nH
Supplier
Will-Semi
Various
Various
Murata LQW15
Comment
DUT
DC blocking
Supply decoupling
Input matching
Will Semiconductor Ltd.
2
Jan, 2018 - Rev. 1.6
WS7918DC
Quick Reference Data
freq = 1575.42 MHz; V
CC
= 2.8 V; V
EN
> 1.2 V; Temp = 25C; input matched to 50 Ω with a 10 nH inductor. The
condition is applied unless otherwise specified.
Symbol
V
CC
I
CC
G
p
NF
IP
1dB
IIP
3
Parameter
Supply voltage
Supply current
Power gain
Noise figure
Input power at 1dBgain compression
Input third-order intercept point
Condition
Min
1.6
Typ
2.8
7.5
16.5
0.65
-5.0
+5.0
Max
3.1
Unit
V
mA
dB
dB
dBm
dBm
Recommended Operating Conditions
Symbol
V
CC
Temp
V
EN
Parameter
Supply voltage
Ambient temperature
Input voltage on pin 6 (EN)
OFF state
ON state
Condition
Min
1.6
-40
0
1.2
Typ
2.8
+25
Max
3.1
+85
0.3
V
CC
Unit
V
C
V
V
Absolute Maximum Ratings
Maximum ratings are absolute ratings, exceeding only one of these values may cause irreversible damage to
the integrated circuit.
Symbol
V
CC
V
EN
V
RFIN
V
RFOUT
P
in
T
STG
T
J
V
ESD
Parameter
Supply voltage
Input voltage on pin EN
Input voltage on pin RFIN
Input voltage on pin RFOUT
RF input power
Storage temperature
Junction temperature
ESD capability all pins
Human Body Model (HBM)
-65
Condition
Min
-0.3
-0.3
-0.3
-0.3
Max
3.3
3.3
3.3
3.3
0
+150
150
±2000
Unit
V
V
V
V
dBm
°
C
°
C
V
Will Semiconductor Ltd.
3
Jan, 2018 - Rev. 1.6
WS7918DC
Characteristics
1550 MHz ≤ f ≤ 1615 MHz; V
CC
= 2.8 V; V
EN
> 1.2 V; Temp = 25C; input mated to 50 Ω with a 10 nH
inductor; The condition is applied unless otherwise specified.
Symbol
I
CC
G
p
RL
in
RL
out
ISL
NF
IP
1dB
IIP
3
K
t
on
t
off
Parameter
Supply current
Power gain
Input return loss
Output return loss
Reverse isolation
Noise figure
Input power at 1 dB gain
compression
Input third-order intercept
point
[1]
[2]
Conditions
On state
Off state
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
Min
Typ
7.5
8.0
16.5
6.5
18.0
27.0
0.65
-5.0
+5.0
Max
10.0
Unit
mA
μA
dB
dB
dB
dB
dB
dBm
dBm
Rollett stability factor
Turn-on time
Turn-off time
1
5
5
μs
μs
[1] f
1
= 1713 MHz, f
2
= 1851 MHz, P
in
= -20 dBm
[2] 10M~20GHz
Will Semiconductor Ltd.
4
Jan, 2018 - Rev. 1.6
WS7918DC
1550 MHz ≤ f ≤ 1615 MHz; V
CC
= 1.8 V; V
EN
> 1.2 V; Temp = 25C; input mated to 50 Ω with a 10 nH
inductor; The condition is applied unless otherwise specified.
Symbol
I
CC
G
p
RL
in
RL
out
ISL
NF
IP
1dB
IIP
3
K
t
on
t
off
Parameter
Supply current
Power gain
Input return loss
Output return loss
Reverse isolation
Noise figure
Input power at 1 dB gain
compression
Input third-order intercept
point
[1]
[2]
Conditions
On state
Off state
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
f = 1575 MHz
Min
Typ
8.0
4.5
16.0
6.3
18.0
26.0
0.65
-7.0
+3.0
Max
5.5
Unit
mA
μA
dB
dB
dB
dB
dB
dBm
dBm
Rollett stability factor
Turn-on time
Turn-off time
1
5
5
μs
μs
[1] f
1
= 1713 MHz, f
2
= 1851 MHz, P
in
= -20 dBm
[2] 10M~20GHz
Will Semiconductor Ltd.
5
Jan, 2018 - Rev. 1.6
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