WSB5520F/5521F/5522F
WSB5520F/5521F/5522F
Http//:www.willsemi.com
Schottky Barrier Diode
Features
Exetremely Fast Switching Speed
Standard
products
are
Pb-free
and
SOT-23
Halogen-free
WSB5520F
MARKING:KL2
WSB5521F
MARKING:KL3
WSB5522F
MARKING:KL4
Order information
Device
WSB5520F-3/TR
WSB5521F-3/TR
WSB5522F-3/TR
Package
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Will Semiconductor Ltd.
1
Apr,
2019 - Rev. 1.3
WSB5520F/5521F/5522F
Absolute maximum ratings
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Blocking voltage (DC)
Forward Continuous Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
R
θJA
T
J
T
STG
Value
30
30
30
0.2
200
500
125
-55 ~ 150
Unit
V
V
V
A
mW
℃/W
℃
℃
Electronics characteristics
(T
A
=25
o
C)
Parameter
Reverse breakdown voltage
Symbol
V
BR
V
F1
V
F2
Forward voltage
V
F3
V
F4
V
F5
Reverse current
Diode capacitance
Reverse recovery time
I
R
C
D
t
rr
Condition
I
R
=100uA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V,f=1MHz
I
F
=I
R
=10mA
I
rr
=0.1XI
R
,R
L
=100Ω
Min.
30
0.24
0.32
0.40
0.50
1
2
10
5
Typ.
Max.
Unit
V
V
V
V
V
V
μA
pF
ns
Will Semiconductor Ltd.
2
Apr, 2019 - Rev. 1.3
WSB5520F/5521F/5522F
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
1000
100
Reverse Current: I
R
(uA)
Ta=100 C
10
o
Forward Current: I
F
(mA)
100
Ta=100 C
10
o
Ta=25 C
1
o
1
Ta=25 C
0.1
o
0.1
0.01
0.01
0
100
200
300
400
500
600
700
800
0
5
Forward Voltage: V
F
(mV)
Forward voltage vs. Forward current
15
20
10
Reverse Voltage: V
R
(V)
25
30
Reverse current vs. Reverse voltage
20
16
12
8
4
0
F = 1MHz
o
Ta = 25 C
100
80
60
40
20
0
Capacitance: C
J
(pF)
0
5
15
20
10
Reverse Voltage: V
R
(V)
25
30
% of Rated power
0
25
50
75
100
o
125
150
T
A
- Ambient temperature ( C)
Junction capacitance vs. Reverse voltage
Power Derating
Will Semiconductor Ltd.
3
Apr, 2019 - Rev. 1.3
WSB5520F/5521F/5522F
Package outline dimensions
SOT-23
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in millimeter
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Typ.
1.025
0.500
0.975
0.400
0.115
2.900
1.300
2.400
0.950TYP
1.900
0.500REF
0.400
4°
0.500
8°
2.000
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Recommend PCB Layout (Unit: mm)
0.80
1.00
1.90
2.40
Will Semiconductor Ltd.
4
Apr, 2019 - Rev. 1.3
电子工程世界
综合技术交流
