Product Data Sheet
XO5027 series
Fundamental
Crystal Oscillator IC
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Features
Wide range of operating supply voltage: 1.40V to
5.5V
Regulated voltage drive oscillator circuit for
reduced power consumption and crystal drive
current
Optimized low crystal drive current oscillation for
miniature crystal units
XO5027Bxseries: for Wire Bonding (type
Ⅰ)
XO5027Cxseries: for Wire Bonding (type
Ⅱ)
Recommended oscillation frequency range
Low frequency Fundamental: 10MHz to 60MHz
Multi-stage frequency divider for low-frequency
output support: 50kHz(min)
Frequency divider built-in:
-Selectable by version: f0, f0/2, f0/4, f0/8, f0/16,
f0/32, f0/64, f0/128, f0/256
-40 to 85℃ operating temperature range
Standby function
High impedance in standby mode, oscillator stops
CMOS output duty level(1/2VDD)
-50±5% output duty
Die form or Wafer form
Description
The
XO5027
series
are
miniature
crystal
oscillator module ICs. The oscillator circuit stage has
voltage regulator drive, significantly reducing current
consumption and crystal current, compared with
existing devices, and significantly reducing the
oscillator characteristics supply voltage dependency.
Application
Used for crystal oscillator
7050, 5032 Crystal Oscillator(XO5027Cx-2DE)
3225, 2520,Crystal Oscillator(XO5027Cx-3/5DE)
2016 Crystal Oscillator(XO5027Cx-4DE)
Ordering Information
Part no.
XO50xxxxx-zWF
XO50xxyy-zDE
Package type
Wafer form
Die form
Note:
1.Below is the detailed definition of part no.
Note: 2. xx:27 , yy:Bx or Cx, z: -2(220um) or -3(130um)， -
4(100um), -5(150um)
PT7C
XO
Device Type
Clock Series
XO 5027 Series
5014
5027
A
CL
1-
1
X
Pad layout type
B: for Wire Bonding(type I)
C: for Wire Bonding(type II)
X: 2 Stand for 220um die thickness
3 Stand for 130um die thickness
4 Stand for 100um die thickness
5 Stand for 150um die thickness
Oscillation frequency range,
frequency divider function
Suffix
f
output
Frequency range
1
f
O
2
f
O
/2
3
f
O
/4
4
f
O
/8
5
f
O
/16
10 to 60MHz
6
f
O
/32
7
f
O
/64
8
fo/128
9
fo/256
DS1109
1
RayStar Microelectronics Technology Inc.
Product Data Sheet
XO5027 series
Fundamental
Crystal Oscillator IC
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Series Configuration
Part No.
Output
frequency
Operating
supply
voltage
range(V)
Oscillation
mode
Recommended
oscillation
frequency
ragne
*1
(MHz)
Output drive
capability(mA)
Standby mode
Oscillator
Output
stop
state
function
XO5027x1
*2
f0
*2
XO5027x2
*2
f0/2
*2
XO5027x3
f0/4
*2
XO5027x4
f0/8
XO5027x5
*2
f0/16
1.4~5.5
Fundamental
XO5027x6
*2
f0/32
XO5027x7
*2
f0/64
XO5027C8
f0/128
XO5027C9
f0/256
Note2;
“x” means B or C of different Pad layout type.
10 to 60
4
Yes
Hi-Z
Block Diagram
VDD
GND
INHN
VRG
R
F
DIVIDER
XT
R
D
C
G
C
G
CMOS
Q
XTN
DS1109
2
RayStar Microelectronics Technology Inc.
Product Data Sheet
XO5027 series
Fundamental
Crystal Oscillator IC
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Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
fo output frequency
High impedance
Oscillator
Normal operation
Stopped
Power-saving Pull-up Resistor
The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level(HIGH or LOW). When INHN is tied
LOW level, the pull-up resistance is large(RUP1),reducing the current consumed by the resistance. When INHN is left open
circuit, the pull-up resistance is small(RUP2),which increases the input susceptibility to external noise. However, the pull-up
resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output.
Oscillation Detector Function
The XO5027 series also feature an oscillation detector circuit. This circuit functions make the outputs disable until the oscillator
circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when
power is applied or when INHN is switched
Pad Configuration
Pad Name
X Coordinate
Pad Coordinate File
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
119
303
584
sensor
0
760.00
4
525
1
118
584
5
641
2
118
301
6
641
3
221
119
Note:
.
Die Size:
760m*700m (Including scribe line size 80m*80m.)
Die Thickness:
220um20um(-2), 130m15m(-3), 100m15m(-4), 150um+/-15um(-5)
Pad Size:
90m*90m
Substrate Level:
GND or Floating
DS1109
3
RayStar Microelectronics Technology Inc.
Product Data Sheet
XO5027 series
Fundamental
Crystal Oscillator IC
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Pad Description
Sym.
XTN
XT
INHN
V
DD
GND
Q
Type
O
I
I
P
P
O
Amplifier output.
Description
Crystal connected between XT and XTN
Amplifier input.
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Supply voltage
Ground
Output. Output frequency determined by internal circuit to one of
f0,f0/2,f0/4,f0/8,f0/16,f0/32,f0/64, f0/128, f0/256
DS1109
4
RayStar Microelectronics Technology Inc.
Product Data Sheet
XO5027 series
Fundamental
Crystal Oscillator IC
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Maximum Ratings
Storage Temperature ..............................................................................- 65oC to +150oC
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +7.0V
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V
DC Output ............................................................... -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................... 20mA
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
(GND=0V, unless otherwise noted.)
Sym.
V
DD
V
IN
T
A
f0
f
OUT
Parameter
Supply voltage
Input voltage
Operating temperature
Oscillation frequency*1
Output frequency
Series
All series
All series
All series
5027x1-5027x9
5027x1-5027x9
Conditions
C
L
= 15pF
-
-
Vdd=1.4V~5.5V -
Vdd=1.4V~5.5V
Min
1.40
GND
-40
10
0.05
Typ
-
-
-
-
-
-
Max
5.5
VDD
+85
60
60
Unit
V
V
°
C
MHz
MHz
Reliability Data
Sym.
ESD
Parameter
Human Body Model
Series
All series
Conditions
MIL-STD-883H Method 3015.8
Min
+/-3000
Typ
+/-6500
-
Max
Unit
V
Note：Industrial Standard ESD：HBM Model +/-2000V
DS1109
5
RayStar Microelectronics Technology Inc.
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