Preliminary Product Data Sheet
XO5035 Series
3
rd
Overtone
Crystal Oscillator IC
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Features
Wide range of operating supply voltage: 1.6V to
5.5V
Regulated voltage drive oscillator circuit for
reduced power consumption and crystal drive
current
Optimized low crystal drive current oscillation for
miniature crystal units
Recommended oscillation frequency range
-40MHz to 160MHz
-40 to 85℃ operating temperature range
Standby function
High impedance in standby mode, oscillator stops
CMOS output duty level(1/2VDD)
50±5% output duty
15pF output drive capability
Die form or Wafer form
The
XO5035
series
are
miniature
crystal
existing devices, and significantly reducing the
oscillator characteristics supply voltage dependency.
Application
Used for crystal oscillator
7050, 5032 Crystal Oscillator(XO5035ALx-2DE)
3225, 2520,Crystal Oscillator(XO5035ALx-3/5DE)
2016 Crystal Oscillator(XO5035ALx-4DE)
Ordering Information
Part no.
XO5035ALx-zWF
XO5035ALx-zDE
Package type
Wafer form
Die form
Description
oscillator module ICs. The oscillator circuit stage has
voltage regulator drive, significantly reducing current
consumption and crystal current, compared with
PT7C
XO
Device Type
Clock Series
XO 5035 Series
5014
5035
A
Note:
1.Below is the detailed definition of part no.
Note: 2. x: F/A/C/D, z: -2(220um) or -3(130um)， -
4(100um), -5(150um)
ALx
L
1-
z
Frequency Range
Oscillation frequency range,
frequency divider function
Suffix
f
output
Frequency range
ALF
40~60
ALA
48~75
ALB
40 to 160MHz
75~95
ALC
95~120
ALD
120~160
x: 2 Stand for 220um die thickness
3 Stand for 130um die thickness
4 Stand for 100um die thickness
5 Stand for 150um die thickness
DS1109
1
RayStar Microelectronics Technology Inc.
Preliminary Product Data Sheet
XO5035 Series
3
rd
Overtone
Crystal Oscillator IC
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Series Configuration
Operating
Output
supply
Oscillation
Part No.
frequency
voltage
mode
range(V)
XO5035ALF
40~60MHz
1.6 to 3.63
XO5035ALA
48~75MHz
1.6 to 3.63
XO5035ALB
75~95MHz
1.6 to 3.63
XO5035ALC
95~120MHz
1.6 to 3.63
3
rd
Overtone
XO5035ALD 120~130MHz
1.7 to 3.63
XO5035ALD 130~150MHz
2.5 to 3.63
XO5035ALD 140~160MHz
2.5 to 3.63
Note2;
“x” means B or C of different Pad layout type.
Recommended
oscillation
frequency
ragne
*1
(MHz)
Output drive
capability(mA)
Standby mode
Oscillator
Output
stop
state
function
40 to 160
20
Yes
Hi-Z
Block Diagram
DS1109
2
RayStar Microelectronics Technology Inc.
Preliminary Product Data Sheet
XO5035 Series
3
rd
Overtone
Crystal Oscillator IC
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
fo output frequency
High impedance
Oscillator
Normal operation
Stopped
Power-saving Pull-up Resistor
The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level(HIGH or LOW). When INHN is tied
LOW level, the pull-up resistance is large(RUP1),reducing the current consumed by the resistance. When INHN is left open
circuit, the pull-up resistance is small(RUP2),which increases the input susceptibility to external noise. However, the pull-up
resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output.
Oscillation Detector Function
The XO5035 series also feature an oscillation detector circuit. This circuit functions make the outputs disable until the oscillator
circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when
power is applied or when INHN is switched.
Pad Configuration
Pad Name
X Coordinate
Pad Coordinate File
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
119
303
584
sensor
0
760.00
4
525
1
118
584
5
641
2
118
301
6
641
3
221
119
Note:
.
Die Size:
760m*700m (Including scribe line size 80m*80m.)
Die Thickness:
220um20um(-2), 130m15m(-3), 100m15m(-4), 150um+/-15um(-5)
Pad Size:
90m*90m
Substrate Level:
GND or Floating
DS1109
3
RayStar Microelectronics Technology Inc.
Preliminary Product Data Sheet
XO5035 Series
3
rd
Overtone
Crystal Oscillator IC
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Pad Description
Sym.
XTN
XT
INHN
V
DD
GND
Q
Type
O
I
I
P
P
O
Amplifier output.
Description
Crystal oscillator connected between XT and XTN
Amplifier input.
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Supply voltage
Ground
Output. Output frequency determined by external crystal
DS1109
4
RayStar Microelectronics Technology Inc.
Preliminary Product Data Sheet
XO5035 Series
3
rd
Overtone
Crystal Oscillator IC
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Maximum Ratings
Storage Temperature ..............................................................................- 65oC to +150oC
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +4.0V
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V
DC Output ............................................................... -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................... 20mA
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
(GND=0V, unless otherwise noted.)
Sym.
V
DD
V
IN
T
A
f0
f
OUT
Parameter
Supply voltage
Input voltage
Operating temperature
Oscillation frequency*1
Output frequency
Series
All series
All series
All series
5035ALx
5035ALF/A/B/C/D
Conditions
5035, C
L
≤ 15pF
-
-
-
C
L
≤ 15pF
Min
1.60
GND
-40
40
40
Typ
-
-
-
-
-
Max
5.5
VDD
+85
160
160
Unit
V
V
°
C
MHz
MHz
Reliability Data
Sym.
ESD
Parameter
Human Body Model
Series
All series
Conditions
MIL-STD-883H Method 3015.8
Min
+/-3000
Typ
+/-6500
-
Max
Unit
V
Note：Industrial Standard ESD：HBM Model +/-2000V
DS1109
5
RayStar Microelectronics Technology Inc.
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