RoHS
YJL3407A
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
● I
D
● R
DS(ON)
( at V
GS
=-10V)
● R
DS(ON)
( at V
GS
=-4.5V)
-30V
-4.1A
＜55
mohm
＜68
mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low R
DS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■
Absolute Maximum Ratings
(T
A
=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
V
DS
-30
V
Gate-source Voltage
T
A
=25℃ @ Steady State
T
A
=70℃ @ Steady State
V
GS
±20
-4.1
-3.2
-15
V
Drain Current
I
D
A
Pulsed Drain Current
A
I
DM
A
Total Power Dissipation @ T
A
=25℃
P
D
1.2
W
Thermal Resistance Junction-to-Ambient @ Steady State
B
R
θJA
105
℃/
W
Junction and Storage Temperature Range
T
J
,T
STG
-55½+150
℃
■
Ordering Information
(Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJL3407A
F2
3407.
3000
30000
120000
7“ reel
1/6
S-S1976
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3407A
■
Electrical Characteristics
(T
J
=25℃ unless otherwise noted)
Parameter
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=-250μA
V
DS
=-30V,V
GS
=0V,T
C
=25℃
V
GS
=
±20V,
V
DS
=0V
V
DS
= V
GS
, I
D
=-250μA
V
GS
= -10V, I
D
=-4.1A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= -4.5V, I
D
=-3.5A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
g
Q
gs
Q
gd
t
D(on)
t
r
V
GS
=-10V,V
DD
=-15V, R
L
=15Ω,I
D
=-1A,
R
GEN
=2.5Ω
t
D(off)
t
f
19
10
V
GS
=-10V,V
DS
=-15V,I
D
=-4.1A
6.8
1.0
1.4
14
61
ns
nC
C
iss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,f=1MHZ
580
98
74
pF
V
SD
I
S
I
S
=-4.1A,V
GS
=0V
53
-0.8
68
-1.2
-4.1
V
A
-1.0
-1.5
40
-30
-1
±100
-2.4
55
mΩ
V
μA
nA
V
Symbol
Conditions
Min
Typ
Max
Units
A. Pulse Test: Pulse Width≤300us,Duty cycle
≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/6
S-S1976
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3407A
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/6
S-S1976
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3407A
Figure7. Safe Operation Area
Figure8. Switching wave
4/6
S-S1976
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL3407A
■
SOT-23 Package information
■
SOT-23 Suggested Pad Layout
5/6
S-S1976
Rev.2.0,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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