ZMM1...ZMM75
Silicon Epitaxial Planar Zener Diodes
in MiniMELF case especially for automatic insertion.
The Zener voltages are graded according to the
international E24 standard. Smaller voltage tolerances
and higher Zener voltages are upon request.
LL-34
These diodes are also available in DO-35 case with
the type designation BZX55C...
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
P
tot
T
j
T
stg
Value
500
1)
175
- 55 to + 175
Unit
mW
O
C
C
O
Valid provided that electrodes are kept at ambient temperature
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 100 mA
1)
Symbol
R
thA
V
F
Max.
0.3
1)
1
Unit
K/mW
V
Valid provided that electrodes are kept at ambient temperature
1/8
ZMM1...ZMM75
Characteristics at T
a
= 25
O
C
Zener Voltage Range
Type
ZMM1
2)
1)
Dynamic Resistance
Z
ZT
Max. (Ω)
8
85
85
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
Z
ZK
Max. (Ω)
50
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
500
600
700
700
1000
1000
1000
at I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse Leakage Current
T
a
= 25 C
O
V
Znom
(V)
0.75
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
ZT
(V)
0.7...0.8
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
at l
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
T
a
= 125 C
Max. (µA)
-
200
160
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
o
at V
R
(V)
-
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
Temp. Coefficient
of Zener Voltage
TKvz (%/K)
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
Max. (µA)
-
100
75
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
ZMM2V0
ZMM2V2
ZMM2V4
ZMM2V7
ZMM3V0
ZMM3V3
ZMM3V6
ZMM3V9
ZMM4V3
ZMM4V7
ZMM5V1
ZMM5V6
ZMM6V2
ZMM6V8
ZMM7V5
ZMM8V2
ZMM9V1
ZMM10
ZMM11
ZMM12
ZMM13
ZMM15
ZMM16
ZMM18
ZMM20
ZMM22
ZMM24
ZMM27
ZMM30
ZMM33
ZMM36
ZMM39
ZMM43
ZMM47
ZMM51
ZMM56
ZMM62
ZMM68
ZMM75
1)
2)
Tested with pulses t
p
= 20 ms.
The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode
electrode to the negative pole.
2/8
ZMM1...ZMM75
Breakdown characteristics
T
j
= constant (pulsed)
mA
50
ZMM...
Tj=25 C
ZMM 1
o
ZMM 2.7
ZMM 3.9
ZMM 3.3
ZMM 4.7
ZMM 6.8
Iz
40
ZMM 8.2
ZMM 5.6
30
20
10
Test current Iz
5mA
0
0
1
2
3
4
5
6
Vz
7
8
9
10 V
Breakdown characteristics
T
j
= constant (pulsed)
mA
30
ZMM...
ZMM 10
ZMM 12
Tj=25
o
C
Iz
ZMM 15
20
ZMM 18
ZMM 22
ZMM 27
ZMM 33
ZMM 36
10
Test current Iz
5mA
0
0
10
20
Vz
30
40 V
3/8
ZMM1...ZMM75
Breakdown characteristics
T
j
= constant (pulsed)
mA
10
ZMM 51
ZMM...
Tj=25
o
C
ZMM 39
Iz
8
ZMM 43
Test current Iz
5mA
6
ZMM 47
4
2
0
0
10
20
30
40
50
60
Vz
70
80
90
100 V
Forward characteristics
Admissible power dissipation
versus ambient temperature
Valid provided that electrodes are kept
at ambient temperature.
mA
10
3
ZMM...
mW
500
ZMM...
10
2
i
F
10
Tj=100 C
1
Tj=25 C
10
-1
o
o
P
tot
400
300
10
-2
200
10
-3
100
10
-4
10
-5
0
0
0.2
0.4
0.6
V
F
0.8
1V
0
100
200
o
C
T
amb
4/8
ZMM1...ZMM75
Pulse thermal resistance
versus pulse duration
Valid provided that the electrodes are kept
at ambient temperature.
K/W
10
3
7
5
5
4
3
2
2
2
4
Dynamic resistance
versus Zener current
ZMM...
1000
ZMM...
T
j
=25 C
o
r
thA
r
zj
3
0.5
100
0.2
5
4
10
7
5
4
3
0.1
0.05
3
2
2
0.02
0.01
V=0
10
7
5
4
3
2
10
ZMM1
5
4
2.7
3.6
4.7
t
p
t
p
V=
T
P
I
3
2
5.1
ZMM5.6
0.1
2
5
T
1
10
-5
10
-4
1
1
10 S
1
2
5
10
-3
10
-2
10
t
p
-1
10
2
5
100mA
Iz
Capacitance versus
Zener voltage
Dynamic resistance
versus Zener current
ZMM...
pF
1000
7
5
ZMM...
T
j
=25 C
o
100
T
j
=25 C
5
o
r
zj
V
R
=1V
4
3
C
tot
4
3
33
2
V
R
=2V
2
27
22
18
15
12
10
100
7
5
4
3
V
R
=1V
5
4
3
V
R
=2V
10
2
6.8/8.2
2
ZMM6.2
1
0.1
1
2
3
4 5
2
5
10
10
2
3
4 5
1
2
5
10
2
5
100mA
100V
Iz
Vz at Iz=5 mA
5/8
电子工程世界
综合技术交流
