JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
ZTX458
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
FEATURES
General Purpose Amplifier Transistor
High Breakdown Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
400
400
5
300
1
125
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
*
*
*
*
Test
conditions
Min
400
400
5
Typ
Max
Unit
V
V
V
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=320V, I
E
=0
V
CB
=320V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
I
C
=50mA, I
B
=5mA
V
CE
=10V,I
C
=50mA
V
CE
=20V,I
C
=10mA,f=20MHz
V
CB
=20V, I
E
=0, f=1MHz
V
(BR)EBO
0.1
0.1
0.1
100
100
15
0.2
0.5
0.9
0.9
50
5
300
μA
μA
μA
V
CE(sat)
*
V
V
V
V
MHz
pF
V
BE(sat)
V
BE
f
T
C
ob
*
*
A,Dec,2010
电子工程世界
