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1.5KA7.5-E3/1

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
O-PALF-W2
针数
2
制造商包装代码
CASE 1.5KA
Reach Compliance Code
unknow
最大击穿电压
8.25 V
最小击穿电压
6.75 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
NOT SPECIFIED
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
最大重复峰值反向电压
6.05 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
1.5KA6.8 thru 1.5KA43A
Vishay Semiconductors
formerly General Semiconductor
Automotive Transient Voltage Suppressors
Case Style 1.5KA
d*
nte
Features
te
Pa
Breakdown Voltage
6.8 to 43V
Peak Pulse Power
1500W
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
• Designed for under the hood applications
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• 1500W peak pulse power surge capability with a
10/1000ms waveform, repetition rate (duty cycle):
0.01%
• Exclusive patented PAR
®
oxide passivated chip construction
• Excellent clamping capability
• Low incremental surge resistance
• Fast response time
• For devices with V
(BR)
D10V I
D
are typically less than
1.0mA at T
A
= 150°C
• High temperature soldering guaranteed: 300°C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Mechanical Data
Case:
Molded plastic over passivated junction
Terminals:
Solder plated axial leads, solderable per MIL-
STD-750, Method 2026
Available in uni-directional only
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.045 oz., 1.2 g
Packaging codes/options:
1/1.5K per Bulk Box, 15K/box
4/1.4K per 13" Reel (52mm Tape), 5.6K/box
23/1K per Ammo Box (52mm Tape), 9K/box
(T
A
= 25°C unless otherwise noted)
Dimensions in inches and (millimeters)
*
Patent #’s
4,980,315
5,166,769
5,278,094
Maximum Ratings and Thermal Characteristics
Parameter
Peak pulse power dissipation
with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current at T
A
= 25°C
with a 10/1000µs waveform
(1)
(Fig. 3)
Steady state power dissipation at T
L
= 75°C
lead lengths 0.375” (9.5mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage at 100A
(3)
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Limit
Minimum 1500
See Next Table
5.0
200
3.5
– 65 to +185
Unit
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Document Number 88300
08-Oct-02
www.vishay.com
1
1.5KA6.8 thru 1.5KA43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Device Type
Min
Max
A
= 25°C unless otherwise noted)
Test
Current
I
T
(mA)
Stand-off
Voltage
V
WM
(Volts)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
T
J
=150°C
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Peak Pulse
Current
I
PPM
(Note 2)
(Amps)
Maximum
Clamping
Voltage
at l
PPM
V
C
(Volts)
Maximum
Temp.
Coefficient
of
V
(BR)
(% / °C)
1.5KA6.8
1.5KA6.8A
1.5KA7.5
1.5KA7.5A
1.5KA8.2
1.5KA8.2A
1.5KA9.1
1.5KA9.1A
1.5KA10
1.5KA10A
1.5KA11
1.5KA11A
1.5KA12
1.5KA12A
1.5KA13
1.5KA13A
1.5KA15
1.5KA15A
1.5KA16
1.5KA16A
1.5KA18
1.5KA18A
1.5KA20
1.5KA20A
1.5KA22
1.5KA22A
1.5KA24
1.5KA24A
1.5KA27
1.5KA27A
1.5KA30
1.5KA30A
1.5KA33
1.5KA33A
1.5KA36
1.5KA36A
1.5KA39
1.5KA39A
1.5KA43
1.5KA43A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10000
10000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.076
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88300
08-Oct-02
1.5KA6.8 thru 1.5KA43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
1.0
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td — Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
20,000
tr = 10µsec.
Peak Value
I
PPM
Fig. 4 – Typical Junction Capacitance
Unidirectional
10,000
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
C
J
— Junction Capacitance (pF)
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
Measured at
Stand-Off
Voltage, V
WM
td
0
0
1.0
2.0
3.0
4.0
100
1.0
10
100
t — Time (ms)
V
(BR)
— Breakdown Voltage (V)
PM
(AV)
, Steady State Power Dissipation (W)
Fig. 5 – Steady State Power
Derating Curve
I
FSM
— Peak Forward Surge Current (A)
5.0
60H
Z
Resistive
or Inductive Load
3.75
L = 0.375" (9.5mm)
Lead Lengths
200
Fig. 6 - Maximum Non-Repetitive/Peak
Forward Surge Current
T
L
= 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
2.5
0.8 x 0.8 x 0.040"
(20 x 20 x 1mm)
Copper Heat Sinks
1.25
0
10
1
10
100
0
25
50
75
100
125
150
175
200
T
L
— Lead Temperature (°C)
Document Number 88300
08-Oct-02
Number of Cycles at 60H
Z
www.vishay.com
3
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