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1.5KA8.2AE3

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 1.5KA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
O-PALF-W2
针数
2
制造商包装代码
CASE 1.5KA
Reach Compliance Code
unknown
其他特性
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压
8.61 V
最小击穿电压
7.79 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
NOT SPECIFIED
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
最高工作温度
185 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
Not Qualified
最大重复峰值反向电压
7.02 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
1.5KA6.8 thru 1.5KA47A
Vishay Semiconductors
Automotive Transient Voltage Suppressors
High Temperature Stability & High
Reliability Conditions
Major Ratings and Characteristics
V
(BR)
P
PPM
P
D
I
FSM
T
j
max.
6.8 V to 47 V
1500 W
5.0 W
200 A
185 °C
* Patent #'s
4,980,315
5,166,769
5,278,094
*
ted
n
ate
P
Case Style 1.5KA
Features
• Patented PAR
®
construction
• Available in Unidirectional polarity only
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1.0 µA above 15 V rating
• Solder Dip 260 °C, 40 seconds
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication
Mechanical Data
Case:
Molded plastic body over passivated junction
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Maximum Ratings
(T
A
= 25 °C, unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000
μs
waveform
(1)
(Fig. 1)
Peak pulse current at T
A
= 25 °C with a 10/1000
μs
waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
Limit
Minimum 1500
See Next Table
5.0
200
3.5
- 65 to + 185
Unit
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
Document Number 88300
16-Aug-05
www.vishay.com
1
1.5KA6.8 thru 1.5KA47A
Vishay Semiconductors
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
T
J
= 150 °C
Maximum Maximum
Reverse
Reverse
Leakage
Leakage
at V
WM
at V
WM
I
D
(µA)
I
D
(µA)
1000
1000
500
500
200
200
50
50
20
20
5.0
5.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10000
10000
5000
5000
2000
2000
500
500
200
200
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
20
20
20
Peak
Pulse
Current
I
PPM(2)
(Amps)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
Maximum
Clamping
Voltage
at I
PPM
V
C
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
Maximum
Temp.
Coefficient
of
V
(BR)
(% / °C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.076
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
Breakdown Voltage
V
(BR)(1)
at I
T
(V)
Min
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
Device Type
1.5KA6.8
1.5KA6.8A
1.5KA7.5
1.5KA7.5A
1.5KA8.2
1.5KA8.2A
1.5KA9.1
1.5KA9.1A
1.5KA10
1.5KA10A
1.5KA11
1.5KA11A
1.5KA12
1.5KA12A
1.5KA13
1.5KA13A
1.5KA15
1.5KA15A
1.5KA16
1.5KA16A
1.5KA18
1.5KA18A
1.5KA20
1.5KA20A
1.5KA22
1.5KA22A
1.5KA24
1.5KA24A
1.5KA27
1.5KA27A
1.5KA30
1.5KA30A
1.5KA33
1.5KA33A
1.5KA36
1.5KA36A
1.5KA39
1.5KA39A
1.5KA43
1.5KA43A
1.5KA47
1.5KA47A
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
Notes:
(1) V
(BR)
measured after I
T
applied for 300 µs = square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88300
16-Aug-05
1.5KA6.8 thru 1.5KA47A
Vishay Semiconductors
Ratings and Characteristics Curves
(T
A
= 25 °C unless otherwise noted)
100
20000
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
10000
T
J
= 25
°C
f = 1.0 MHz
Vsig
= 50 mVp-p
Measured at
Zero Bias
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
1000
1.0
Measured at
Stand-Of
Voltage, V
WM
0.1
0.1
µs
100
1.0
µs
10
µs
100
µs
1.0
µs
10
µs
1.0
10
100
td - Pulse
Width
(sec.)
V
(BR)
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Unidirectional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
5.0
60 Hz Resistive
or Inductive Load
3.75
75
50
P
D
, Power Dissipation (W)
2.5
L = 0.375” (9.5 mm)
Lead Lengths
25
1.25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
200
Figure 5. Power Derating Curve
I
PPM
- Peak Pulse Current,
%
I
RSM
tr = 10
µsec.
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
I
FSM
- Peak Forward Surge Current (A)
150
T
L
= 75 °C
8.3
ms Single Half Sine-Wave
100
100
Half
Value
- IPP
2
I
PPM
50
10/1000
µsec.
Waveform
as defined
by
R.E.A.
td
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number
of Cycles at 60H
Z
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
Document Number 88300
16-Aug-05
www.vishay.com
3
1.5KA6.8 thru 1.5KA47A
Vishay Semiconductors
Package outline dimensions in inches (millimeters)
Case Style 1.5KA
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
www.vishay.com
4
Document Number 88300
16-Aug-05
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