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1.5KE82A

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-04, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
包装说明
O-PALF-W2
针数
2
制造商包装代码
CASE 41A-04
Reach Compliance Code
unknown
其他特性
UL RECOGNIZED, HIGH RELIABILITY
最大击穿电压
86.1 V
最小击穿电压
77.9 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
湿度敏感等级
NOT SPECIFIED
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
5 W
认证状态
COMMERCIAL
最大重复峰值反向电压
70.1 V
表面贴装
NO
技术
ZENER
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
40
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1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
Working Peak Reverse Voltage Range
5.8 V to 214 V
Peak Power
1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available*
MARKING DIAGRAMS
A
1.5KE
xxxA
YYWWG
G
A
1N6
xxx
YYWWG
G
A
= Assembly Location
1.5KExxxA = ON Device Code
1N6xxx
= JEDEC Device Code
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ORDERING INFORMATION
Device
1.5KExxxAG
1.5KExxxARL4G
1N6xxxAG
1N6xxxARL4G
Package
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Axial Lead
(Pb−Free)
Shipping
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2009
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
October, 2009
Rev. 12
1
Publication Order Number:
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
25°C
Steady State Power Dissipation
@ T
L
25°C, Lead Length = 3/8 in
Derated above T
L
= 50°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
50
R
qJL
I
FSM
T
J
, T
stg
20
200
65 to +150
Unit
W
W
mW/°C
°C/W
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
Uni−Directional TVS
http://onsemi.com
2
1N6267A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
(Note 4)
1N6267AG
1N6269AG
1N6271AG
1N6274AG
1N6275AG
1N6276AG
1N6277AG
1N6278AG
1N6279AG
1N6280AG
1N6281AG
1N6282AG
1N6283AG
1N6284AG
1N6285AG
1N6286AG
1N6287AG
1N6288A, G
1N6289AG
1N6290AG
1N6291AG
1N6292AG
1N6294AG
1N6295AG
V
RWM
(Note 5)
(Volts)
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
Breakdown Voltage
I
R
@ V
RWM
(mA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BR
(Note 6)
(Volts)
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
@ I
T
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 7)
V
C
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
I
PP
(A)
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12
11
QV
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
Device
1.5KE6.8AG
1.5KE7.5AG
1.5KE8.2AG
1.5KE9.1AG
1.5KE10AG
1.5KE11AG
1.5KE12AG
1.5KE13AG
1.5KE15AG
1.5KE16A, G
1.5KE18A, G
1.5KE20AG
1.5KE24AG
1.5KE27AG
1.5KE30AG
1.5KE33AG
1.5KE36AG
1.5KE39AG
1.5KE43AG
1.5KE47AG
1.5KE51AG
1.5KE56AG
1.5KE62AG
1.5KE68AG
1.5KE75AG
1.5KE82A, G
1.5KE91AG
Devices listed in
bold, italic
are ON Semiconductor Preferred devices.
Preferred
devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb−Free package or Pb−Free packages are available.
http://onsemi.com
3
1N6267A Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
100
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
10,000
MEASURED @
ZERO BIAS
10,000
MEASURED @
ZERO BIAS
1000
C, CAPACITANCE (pF)
MEASURED @ V
RWM
100
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
IPP, VALUE (%)
3/8″
100
t
r
PEAK VALUE - I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr
10
ms
HALF VALUE -
50
t
P
I
PP
2
1
2
t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
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