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1.5SMC43CHM6G

Trans Voltage Suppressor Diode, 1500W, 34.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
R-PDSO-C2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
EXCELLENT CLAMPING CAPABILITY
最大击穿电压
47.3 V
最小击穿电压
38.7 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AB
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
BIDIRECTIONAL
最大功率耗散
6.5 W
参考标准
AEC-Q101
最大重复峰值反向电压
34.8 V
表面贴装
YES
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
30
文档预览
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
1500W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
1500
6.5
200
3.5 / 5.0
15
50
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C/W
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Note 2: V
F
=3.5V on 1.5SMC6.8 - 1.5SMC91 and V
F
=5.0V on 1.5SMC100 - 1.5SMC200
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types 1.5SMC6.8 - types 1.5SMC200A
2. Electrical characteristics apply in both directions
Version: N1602
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
1.5SMCxxxx
(Note 1)
PART NO.
SUFFIX
H
PACKING CODE
R7
R6
M6
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note 1: "xxxx" defines voltage from 6.8V (1.5SMC6.8) to 200V (1.5SMC200A)
EXAMPLE
EXAMPLE
PART NO.
1.5SMC200AHR7G
PART NO.
1.5SMC200A
PART NO.
SUFFIX
H
PACKING CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: N1602
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
tr=10μs
Peak value
I
PPM
IFSM, PEAK FORWARD SURGE CURRENT (A)
200
180
160
140
120
100
80
60
40
20
0
1
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms single half sine wave
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
UNIDIRECTIONAL
BIDRECTIONA
V
R
=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
V
R
-rated
stand-off
voltage
Version: N1602
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
1.5SMC6.8
1.5SMC6.8A
1.5SMC7.5
1.5SMC7.5A
1.5SMC8.2
1.5SMC8.2A
1.5SMC9.1
1.5SMC9.1A
1.5SMC10
1.5SMC10A
1.5SMC11
1.5SMC11A
1.5SMC12
1.5SMC12A
1.5SMC13
1.5SMC13A
1.5SMC15
1.5SMC15A
1.5SMC16
1.5SMC16A
1.5SMC18
1.5SMC18A
1.5SMC20
1.5SMC20A
1.5SMC22
1.5SMC22A
1.5SMC24
1.5SMC24A
1.5SMC27
1.5SMC27A
1.5SMC30
1.5SMC30A
1.5SMC33
1.5SMC33A
1.5SMC36
1.5SMC36A
1.5SMC39
1.5SMC39A
1.5SMC43
1.5SMC43A
1.5SMC47
1.5SMC47A
1.5SMC51
1.5SMC51A
1.5SMC56
1.5SMC56A
DDJ
DEJ
DFJ
DGJ
DHJ
DKJ
DLJ
DMJ
DNJ
DPJ
DQJ
DRJ
DSJ
DTJ
DUJ
DVJ
DWJ
DXJ
DYJ
DZJ
EDJ
EEJ
EFJ
EGJ
EHJ
EKJ
ELJ
EMJ
ENJ
EPJ
EQJ
ERJ
ESJ
ETJ
EUJ
EVJ
EWJ
EXJ
EYJ
EZJ
FDJ
FEJ
FFJ
FGJ
FHJ
FKJ
6.12
6.46
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
Maximum
@ V
WM
I
R
(μA)
1000
1000
500
500
200
200
50
50
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
145
150
134
139
126
130
114
117
105
108
97
100
91
94
82
86
71
74
67
70
59
60
54
56
49
51
45
47
40
42
36
38
33
34
30
31
27
29
25
26
23
24
21
22
19
20
Maximum
@ I
PPM
Vc (V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
Maximum
Coefficient
of V
BR
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
GENERAL
PART
NUMBER
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Version: N1602
1.5SMC SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
1.5SMC62
1.5SMC62A
1.5SMC68
1.5SMC68A
1.5SMC75
1.5SMC75A
1.5SMC82
1.5SMC82A
1.5SMC91
1.5SMC91A
1.5SMC100
1.5SMC100A
1.5SMC110
1.5SMC110A
1.5SMC120
1.5SMC120A
1.5SMC130
1.5SMC130A
1.5SMC150
1.5SMC150A
1.5SMC160
1.5SMC160A
1.5SMC170
1.5SMC170A
1.5SMC180
1.5SMC180A
1.5SMC200
1.5SMC200A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled.
4. For bidirectional use C or CA suffix for types 1.5SMC6.8 - 1.5SMC200A
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
FLJ
FMJ
FNJ
FPJ
FQJ
FRJ
FSJ
FTJ
FUJ
FVJ
FWJ
FXJ
FYJ
FZJ
GDJ
GEJ
GFJ
GGJ
GHJ
GKJ
GLJ
GMJ
GNJ
GPJ
GQJ
GRJ
GSJ
GTJ
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
Max
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
Maximum
@ V
WM
I
R
(μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
17
18
16
17
14
15
13
13.9
12
12.6
10.9
11.4
9.9
10.3
9.1
9.5
8.4
8.7
7.3
7.6
6.8
7.1
6.4
6.7
6.1
6.4
5.4
5.7
Maximum
@ I
PPM
Vc (V)
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
Maximum
Coefficient
of V
BR
(%/°C)
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
GENERAL
PART
NUMBER
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Version: N1602
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