10-F006PPA006SB-M682B
preliminary datasheet
flowPIM0+PFC 2nd
Features
●
Clip in PCB mounting
●Trench
Fieldstop IGBT's for low saturation losses
●
Latest generation superjunction MOSFET for PFC
600V/6A
flowPIM0+PFC 2nd
Target Applications
●
Industrial Drives
●
Embedded Drives
Schematic
Types
●
10-F006PPA006SB-M682B
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
2
1600
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
26
36
200
T
j
=150°
C
200
32
48
150
V
A
A
A
2
s
W
°
C
Copyright by Vincotech
1
Revision: 1
10-F006PPA006SB-M682B
preliminary datasheet
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
PFC MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Power dissipation
Gate-source peak voltage
Reverse diode dv/dt
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
E
AS
E
AR
I
AR
dv/dt
P
tot
V
GS
dv/dt
T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
j
=T
j
max
t
p
limited by T
j
max
I
D
=3,4A
V
DD
=50V
I
D
=3,4A
V
DD
=50V
Tj=25°
C
Tj=25°
C
Tj=25°
C
T
h
=80°
C
T
c
=80°
C
600
10
11
59
418
0.63
3,4
50
47
70
20
15
150
V
A
A
mJ
mJ
A
V/ns
W
V
V/ns
°
C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
12
12
18
32
49
175
V
A
A
W
°
C
PFC Shunt
DC forward current
Power dissipation per Shunt
I
F
P
tot
T
c
=25°
C
T
c
=25°
C
10
5
A
W
Copyright by Vincotech
2
Revision: 1
10-F006PPA006SB-M682B
preliminary datasheet
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
400V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
9
13
18
18
28
43
20
6
360
175
V
A
A
A
W
V
µs
V
°
C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
13
16
12
21
32
175
V
A
A
W
°
C
Copyright by Vincotech
3
Revision: 1
10-F006PPA006SB-M682B
preliminary datasheet
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
DC link Capacitor
Max.DC voltage
V
MAX
T
c
=25°
C
500
V
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
Copyright by Vincotech
4
Revision: 1
10-F006PPA006SB-M682B
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
1600
25
25
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,20
1,17
0,92
0,81
10,9
14,4
0.05
V
V
m
mA
Thermal resistance chip to heatsink per chip
R
thJH
2,20
K/W
PFC MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Gate resistance
R
DS(on)
V
(GS)th
I
GSS
I
DSS
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
GE
Q
GS
Q
GD
C
iss
f=1MHz
C
oss
R
G
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
0
100
Tj=25°
C
85
6
0/10
480
9,5
Tj=25°
C
Rgoff=4
Rgon=4
V
GS
=V
DS
20
0
0
600
10
6
0,00063
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
203
398
3,0
m
3,6
100
1000
2,4
V
nA
nA
10
400
6
17
16
2
2
103
113
6
9
0,045
0,091
0,006
0,007
ns
mWs
63
7,6
32
1400
pF
nC
Thermal resistance chip to heatsink per chip
1,51
K/W
PFC Diode
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
di(rec)max
/dt
6
600
Rgon=4
10
400
6
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
2,83
1,66
50
500
29
31
9
15
0,12
0,29
0,013
0,042
12276
7905
V
µA
A
ns
µC
mWs
A/µs
Thermal resistance chip to heatsink per chip
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
2,95
K/W
PFC Shunt
R1 value
Temperature coeficient
Internal heat resistance
Inductance
R
t
c
R
thi
L
C
20° to 60°
C
50
30
10
3
m
ppm/K
K/W
nH
Copyright by Vincotech
5
Revision: 1
