FZ12 / F0122PA100SC
preliminary datasheet
flowPHASE0
Features
●
Trench Fieldstop IGBT technology
●
2-clip housing in 12mm and 17mm height
●
Compact and low inductance design
4
1200V/100A
flow0 housing
Target Applications
●
Motor Drive
●
UPS
Schematic
Types
●
FZ122PA100SC
●
F0122PA100SC
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
71
93
300
146
222
±20
10
800
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
61
82
200
89
135
175
V
A
A
W
°C
Copyright by Vincotech
1
Revision: 1
FZ12 / F0122PA100SC
preliminary datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
2
Revision: 1
FZ12 / F0122PA100SC
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
CE
=V
GE
15
0
20
1200
0
0,0036
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1,5
5,8
1,95
2,39
6,5
2,3
0,035
700
7,5
193
210
32
42
299
383
75
110
8,09
12,46
5,35
8,47
6150
405
345
386
0,65
K/W
nC
pF
V
V
mA
nA
Ω
ns
±15
600
100
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=4
Ω
±15
600
100
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,81
1,77
98,18
113,5
283,4
454,7
8,93
18,06
3254
1038
3,1
6,56
1,07
K/W
2,3
V
A
ns
μC
A/μs
mWs
Copyright by Vincotech
3
Revision: 1
FZ12 / F0122PA100SC
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
300
I
C
(A)
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
300
Output inverter IGBT
250
250
200
200
150
150
100
100
50
50
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
350
μs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
350
μs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
120
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
300
I
F
(A)
Output inverter FRED
T
j
= 25°C
100
250
T
j
= T
jmax
-25°C
80
200
60
150
40
100
T
j
= T
jmax
-25°C
T
j
= 25°C
20
50
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,8
1,6
2,4
3,2
V
F
(V)
4
At
t
p
=
V
CE
=
350
10
μs
V
At
t
p
=
350
μs
Copyright by Vincotech
4
Revision: 1
FZ12 / F0122PA100SC
preliminary datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
30
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
30
E (mWs)
Output inverter IGBT
E
on High T
25
25
E
on High T
20
20
E
on Low T
15
15
E
on Low T
E
off High T
10
10
E
off Low T
5
5
E
off High T
E
off Low T
0
0
40
80
120
160
I
C
(A)
200
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
4
Ω
R
goff
=
4
Ω
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
100
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
10
E (mWs)
Output inverter IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
10
E (mWs)
Output inverter IGBT
8
E
rec
8
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
6
6
E
rec
T
j
= 25°C
4
E
rec
4
T
j
= 25°C
E
rec
2
2
0
0
40
80
120
160
I
C
(A)
200
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
4
Ω
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
100
A
Copyright by Vincotech
5
Revision: 1
