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10-RZ126PA025SC-M627F41

Clip-in PCB mounting (optional)

厂商名称:Vincotech

厂商官网:https://www.vincotech.com/

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10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
flow
90PACK 0
Features
90° PCB mounting for easy heat sink assembly
Clip-in PCB mounting (optional)
Open emitter for easy current sensing
1200V/8A
flow
90PACK 0
without clips
Target Applications
Standard Drive
Servo Drive
Bookshelf Inverter
with clips
Schematic
Types
10-RZ126PA008SC-M627F41
10-R0126PA008SC-M627F40
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current *
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT *
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
* measured with phase-change material
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
1200V, Tj
Top max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
1200
12
12
24
16
51
78
±20
10
800
175
V
A
A
A
W
V
µs
V
°
C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current *
Repetitive peak forward current
Power dissipation per Diode *
Maximum Junction Temperature
* measured with phase-change material
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
22
29
20
49
74
175
V
A
A
W
°
C
Copyright by Vincotech
1
Revision: 2
10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+150
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 10,93
>200
V
mm
mm
Copyright by Vincotech
2
Revision: 2
10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
960
8
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=32
Rgon=32
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
V
CE
=V
GE
15
0
20
1200
0
0,0003
8
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5,0
1,5
5,8
1,91
2,21
6,5
2,3
10
200
V
V
µA
nA
none
55
54
23
24
177
240
67
121
0,556
0,870
0,434
0,733
ns
±15
600
8
mWs
490
50
30
53
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,85
K/W
Thermal resistance chip to heatsink per chip
R
thJH
2,18
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
8
Rgon=32
±15
600
8
Erec
Phase-Change
Material
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1,2
1,69
1,59
7
9
247
428
0,85
1,77
80
44
0,328
0,714
2,30
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,95
K/W
Thermal resistance chip to heatsink per chip
R
thJH
2,30
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
R
∆R/R
P
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-5
200
2
3500
3560
G
4700
5
%
mW
mW/K
K
K
Copyright by Vincotech
3
Revision: 2
10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
25
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
25
I
C
(A)
Output inverter IGBT
20
20
15
15
10
10
5
5
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
µs
250
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
8
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
8
I
F
(A)
Output inverter FWD
6
6
4
4
T
j
= 150°
C
T
j
= 25°
C
2
T
j
= 150°
C
T
j
= 25°
C
2
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,4
0,8
1,2
1,6
V
F
(V)
2
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
Copyright by Vincotech
4
Revision: 2
10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
2
E (mWs)
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
2
Output inverter IGBT
E
on High T
1,6
1,6
E
on High T
1,2
E
off High T
E
on Low T
1,2
E
on Low T
0,8
0,8
E
off High T
E
off Low T
0,4
0,4
E
off Low T
0
0
5
10
I
C
(A)
15
0
0
20
40
60
80
100
120
R
G
(
)
140
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
32
R
goff
=
32
With an inductive load at
T
j
=
°C
25/150
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
8
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
1
E (mWs)
Output inverter FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
E (mWs)
1
Output inverter FWD
E
rec
0,8
0,8
T
j
= 150°
C
T
j
= 150°
C
0,6
E
rec
0,6
T
j
= 25°
C
0,4
E
rec
0,4
T
j
= 25°
C
E
rec
0,2
0,2
0
0
3
6
9
12
I
C
(A)
15
0
0
32
64
96
R
G
(
)
128
With an inductive load at
25/150
T
j
=
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
32
With an inductive load at
T
j
=
25/150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
8
A
Copyright by Vincotech
5
Revision: 2
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参数对比
与10-RZ126PA025SC-M627F41相近的元器件有:10-R01126PA008SC-M627F40、10-R0126PA025SC-M627F40。描述及对比如下:
型号 10-RZ126PA025SC-M627F41 10-R01126PA008SC-M627F40 10-R0126PA025SC-M627F40
描述 Clip-in PCB mounting (optional) Clip-in PCB mounting (optional) Clip-in PCB mounting (optional)
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