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10ETF06STRL

10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-263
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
compliant
Is Samacsys
N
应用
FAST RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值正向电流
160 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
225
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.145 µs
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin I2204 03/05
QUIET
IR
Series
10ETF06SPbF
FAST SOFT RECOVERY
RECTIFIER DIODE
Lead-Free ("PbF" suffix)
V
F
t
rr
< 1.2V @ 10A
= 50ns
V
RRM
= 600V
Description/ Features
The 10ETF06SPbF fast soft recovery
QUIET
IR
rectifier series has been optimized for combined
short reverse recovery time and low forward
voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
t
rr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
Values
10
600
150
1.2
50
- 40 to 150
D
2
Pak (SMD-220)
www.irf.com
1
10ETF06SPbF
QUIET
IR
Series
Bulletin I2204 03/05
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
10ETF06SPbF
600
V
RSM
, maximum non repetitive
peak reverse voltage
V
700
I
RRM
150°C
mA
2
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I t
2
10ETF..
10
150
160
112.5
160
Units
A
A
A
2
s
A
2
√s
Conditions
@ T
C
= 128° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I t for fusing
2
I
2
√t
Max. I
2
√t
for fusing
1125
Electrical Specifications
Parameters
V
FM
r
t
I
RM
Max. Forward Voltage Drop
Forward slope resistance
10ETF..
1.2
12.7
1.25
0.1
2.0
Units
V
mΩ
V
mA
Conditions
@ 10A, T
J
= 25°C
T
J
= 150°C
V
F(TO)
Threshold voltage
Max. Reverse Leakage Current
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
10ETF..
145
2.75
0.32
0.6
Units
ns
A
µC
Conditions
I
F
@ 10Apk
@ 25A/ µs
@ 25°C
2
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10ETF06SPbF
QUIET
IR
Series
Bulletin I2204 03/05
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
10ETF..
- 40 to 150
- 40 to 150
1.5
40
240
2 (0.07)
Units
°C
°C
°C/W
°C/W
°C
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient (PCB Mount)**
T
s
wt
Soldering Temperature
Approximate Weight
Case Style
Marking Device
DC operation
D
2
Pak (SMD-220)
10ETF06S
** When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Maximum Allowa ble Case T
emperature (°C)
10ET
F..SS
eries
R
thJC
(DC) = 1.5 °C/ W
Maximum Allowable Cas T
e emperature (°C)
150
145
140
150
145
140
10ET
F..SS
eries
R
thJC
(DC) = 1.5 °C/ W
Conduction Angle
Cond uction Period
135
130
125
120
30°
60°
90°
120°
180°
0
2
4
6
8
10
12
135
130
125
120
30°
60°
90°
120°
180°
12
DC
14
16
0
2
4
6
8
10
Average F
orward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
16
14
12
10
8
6
Cond uction Angle
Fig. 2 - Current Rating Characteristics
20
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMSLimit
16
12
8
R
MSLimit
Conduction Period
4
2
0
0
2
4
10ET ..SS
F
eries
T
J
= 150°C
6
8
10
4
10ET
F..SS
eries
T
J
= 150°C
0
4
8
12
16
0
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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3
10ETF06SPbF
QUIET
IR
Series
Bulletin I2204 03/05
Peak Half S Wave Forward Current (A)
ine
At Any Ra ted Loa d Cond ition And With
Rated V
R
Ap p lied Follo wing Surge.
R M
Initial T
J
= 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Peak Half S Wave F
ine
orward Current (A)
160
140
120
100
80
60
40
180
160
140
120
100
80
60
40
0.01
Maximum No n Repetitive S
urge Current
Versus Pulse T in Duratio n.
ra
Initia l T
J
= 150°C
No Volta ge R
eap plied
R
ated V
RRM
R
eap plied
10ET ..S S
F
eries
1
10
100
10E F S
T ..S eries
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
100
Instantaneous Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
10
T
J
= 25°C
T
J
= 150°C
10E F S
T ..S eries
1
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum R
everse R
ecovery T
ime - T (µs)
rr
Maximum R
everse R
ecovery T
ime - T (µs)
rr
0.2
0.4
0.15
I
FM
= 20 A
10 A
0.3
0.1
5A
2A
0.2
I
FM
= 20 A
10 A
5A
0.05
10E F..S S
T
eries
T
J
= 25 °C
0
0
40
80
120
1A
0.1
10ET ..SS
F
eries
T
J
= 150 °C
0
0
40
80
120
2A
1A
160
200
160
200
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
R
ate Of Fall Of F
orward Current - di/ dt (A/ µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
4
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10ETF06SPbF
QUIET
IR
Series
Bulletin I2204 03/05
Maximum R
everse Recovery Charge - Qrr (µC)
Maximum R
everse Recovery Charge - Qrr (µC)
1.4
1.2
1
0.8
0.6
0.4
0.2
1A
10 A
2.5
10ET
F..SS
eries
T
J
= 150 °C
I
FM
= 20 A
10ET ..SS
F
eries
T
J
= 25 °C
I
FM
= 20 A
2
10 A
1.5
5A
5A
2A
1
2A
0.5
1A
0
0
40
80
120
160
200
Rate Of Fall Of F
orward Current - di/ dt (A/ µs)
0
0
40
80
120
160
200
Rate Of Fall Of F
orward Current - di/ dt (A/ µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
Maximum R
everse R
ecovery Current - Irr (A)
15
10E F S
T ..S eries
T = 25 °C
J
I
FM
= 20 A
10 A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
Maximum R
everse Recovery Current - Irr (A)
20
10E F S
T ..S eries
T
J
= 150 °C
I
FM
= 20 A
10 A
5A
2A
12
16
9
5A
2A
1A
12
6
8
1A
3
4
0
0
40
80
120
160
200
R
ate Of Fall Of F
orward Current - di/ dt (A/ µs)
0
0
40
80
120
160
200
R
ate Of F Of F
all
orward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
T
ransient T
hermal Impedance Z
thJC
(°C/ W)
10
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
teady S
tate Value
(DC Opera tion)
S
ingle Pulse
0.01
10E F S
T ..S eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
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参数对比
与10ETF06STRL相近的元器件有:10ETF06S、10ETF06STRR、10ETF06STRRPBF、SM4004DT-C。描述及对比如下:
型号 10ETF06STRL 10ETF06S 10ETF06STRR 10ETF06STRRPBF SM4004DT-C
描述 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 600 V, SILICON, RECTIFIER DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 1Amp Surface Mount Silicon Rectifiers
是否Rohs认证 不符合 不符合 不符合 符合 -
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) - -
零件包装代码 TO-263 TO-263 TO-263 - -
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 - -
针数 3 3 3 - -
Reach Compliance Code compliant compliant unknown unknown -
Is Samacsys N N N N -
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY - -
配置 SINGLE SINGLE SINGLE SINGLE -
二极管元件材料 SILICON SILICON SILICON - -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 1.2 V 1.2 V 1.2 V 1.2 V -
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 - -
JESD-609代码 e0 e0 e0 - -
湿度敏感等级 1 1 1 1 -
最大非重复峰值正向电流 160 A 160 A 160 A 150 A -
元件数量 1 1 1 1 -
相数 1 1 1 - -
端子数量 2 2 2 - -
最高工作温度 150 °C 150 °C 150 °C 150 °C -
最大输出电流 10 A 10 A 10 A 10 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - -
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
认证状态 Not Qualified Not Qualified Not Qualified - -
最大重复峰值反向电压 600 V 600 V 600 V 600 V -
最大反向恢复时间 0.145 µs 0.145 µs 0.145 µs 0.145 µs -
表面贴装 YES YES YES YES -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
端子形式 GULL WING GULL WING GULL WING - -
端子位置 SINGLE SINGLE SINGLE - -
Base Number Matches 1 1 1 1 -
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