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10ETF10STRLPBF

Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, D2PAK-3

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-263
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
compliant
Is Samacsys
N
其他特性
FREEWHEELING
应用
FAST SOFT RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.33 V
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
185 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向电流
100 µA
最大反向恢复时间
0.31 µs
表面贴装
YES
端子面层
MATTE TIN OVER NICKEL
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
I2149 rev. A 11/99
QUIET
IR
Series
10ETF..S
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
t
rr
< 1.33V @ 10A
= 80ns
V
RRM
1000 to 1200V
Description/Features
The 10ETF..S fast soft recovery QUIET
IR
rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
range
I
FSM
V
F
t
rr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
10ETF..S
10
1000 to 1200
160
1.33
80
- 40 to 150
D
2
Pak (SMD-220)
www.irf.com
1
10ETF..S QUIET
IR
Series
I2149 rev. A 11/99
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
1000
1200
V
RSM
, maximum non repetitive
peak reverse voltage
V
1100
1300
I
RRM
150°C
mA
4
10ETF10S
10ETF12S
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
10ETF..S
10
160
Units
A
A
Conditions
@ T
C
= 125° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
185
128
180
A
2
s
A
2
√s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
1800
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
10ETF..S
1.33
22.9
0.96
0.1
4
Units
V
mΩ
V
mA
Conditions
@ 10A, T
J
= 25°C
T
J
= 150°C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Typical Snap Factor
10ETF..S
310
4.7
1.05
0.6
Units
ns
A
µC
Conditions
I
F
@ 10Apk
@ 25A/ µs
@ 25°C
2
www.irf.com
10ETF..S QUIET
IR
Series
I2149 rev. A 11/99
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
10ETF..S Units
- 40 to 150
- 40 to 150
1.5
62
240
2 (0.07)
°C
°C
°C/W
°C/W
°C
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient (PCB Mount)**
T
s
wt
Soldering Temperature
Approximate Weight
Case Style
DC operation
D
2
Pak (SMD-220)
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
M a x im u m A llo w a ble C a se T e m p e r at u re (°C )
1 45
1 40
1 0 E T F.. Se rie s
R
thJC
(D C ) = 1 .5 °C / W
M a xim u m A llo w a b le C a se T e m p e rat u re (°C )
1 50
1 50
1 45
1 40
1 35
1 30
30°
1 25
1 20
1 15
0
2
4
6
8
10
12
14
16
A v e ra g e Fo rw a rd C u rre n t (A )
6 0°
90°
120°
1 80°
DC
Co nd uc tio n Pe rio d
1 0 E T F.. Se rie s
R
thJC
(D C ) = 1 .5 ° C / W
C o nduc tio n A ng le
1 35
1 30
30 °
1 25
1 20
1 15
0
2
4
6
8
10
12
A v e ra g e F o rw a rd C ur re n t (A )
6 0°
90°
120°
180°
Fig. 1 - Current Rating Characteristics
M a x im u m A v e r ag e Fo rw a rd Po w e r Lo s s ( W )
Maxim um Average Forward Pow er Loss (W )
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
Average Forw ard Current (A)
10.TF.. Series
T
J
= 150°C
C o nd uctio n A ng le
Fig. 2 - Current Rating Characteristics
24
20
16
12
R M S Lim it
8
4
0
0
2
4
6
8
10
12
14
16
A v e ra g e Fo rw a rd C u rre n t (A )
C o ndu ction Pe rio d
180°
120°
90°
60°
30°
R MS Lim it
DC
180°
120°
90°
60°
30°
1 0 E T F.. S e rie s
T
J
= 1 5 0 °C
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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3
10ETF..S QUIET
IR
Series
I2149 rev. A 11/99
P e a k H a lf S in e W a v e F o r w a r d C u rre n t ( A )
A t A n y R a t e d L o a d C o n d itio n A n d W ith
R a te d V
RRM
A p p lie d Fo llo w in g S u rg e .
Peak Half Sin e W ave Forward Current (A)
1 80
1 60
1 40
1 20
1 00
80
60
40
1
200
180
160
140
120
100
80
60
40
0.01
M a xim u m N o n R e pe titiv e Surge C urre nt
V ersus Pulse Train Duration.
In itia l T
J
= 1 5 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
In itial T
J
= 150°C
No Voltage Reapplied
Rated V
RR M
Reapplied
1 0ET F.. Series
10E TF.. Se ries
0.1
Pulse Train Duration (s)
1
10
10 0
N um b er O f Eq ua l A m plitu de Half C ycle C ur rent P u ls es (N )
Fig. 5 - Maximum Non-Repetitive Surge Current
1 0 00
Instan tan eous For ward Cur rent (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
T
J
= 25°C
10 0
T
J
= 150 °C
10
1 0ETF.. Ser ies
1
0.5
1
1. 5
2
2 .5
3
3 .5
4
4 .5
Instan taneous Forward Voltage (V )
Fig. 7 - Forward Voltage Drop Characteristics
M a xim u m R e v e rse R e c o v e ry Tim e - T rr (µ s)
M a xim u m R e v e rse R e c o v e ry Tim e - T rr (µs)
0 .6
0 .5
0 .4
0 .3
0 .2
0 .1
0
0
40
80
12 0
16 0
20 0
R a te O f F a ll O f Fo rw a rd C u rre n t - d i/ d t (A / µs )
I
FM
= 1 0 A
8 A
5 A
2A
1 A
0 .8
1 0 E T F.. S e rie s
T
J
= 150 ° C
0 .6
1 0 E T F.. S e r ie s
T
J
= 2 5 °C
0 .4
I
FM
= 1 0 A
8A
5A
2 A
1A
0 .2
0
0
40
80
12 0
1 60
2 00
Ra t e O f Fa ll O f F o rw a rd C u rre n t - d i/d t (A / µ s)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
4
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10ETF..S QUIET
IR
Series
I2149 rev. A 11/99
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q r r (µ C )
M a xim u m R e v er se R e c o v e r y C h arg e - Q rr (µ C )
2
1 0 E T F .. Se rie s
T
J
= 2 5 °C
1 .6
8A
I
FM
= 1 0 A
5
1 0 E T F.. S e r ie s
T
J
= 150 ° C
4
8A
I
FM
= 10 A
1 .2
5A
3
5A
0 .8
2A
2
2A
0 .4
1A
1
1 A
0
0
40
80
12 0
160
20 0
R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/ dt (A / µ s)
0
0
40
80
120
1 60
20 0
R a t e O f F a ll O f Fo rw a rd C ur re n t - d i/d t (A /µ s)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
M a x im um R e v e rse R e c o v e ry C u rre n t - Irr ( A )
20
1 0E T F.. Se ries
T
J
= 2 5 °C
16
I
FM
= 1 0 A
8 A
5A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
M ax im um R e v e r se R e c o v er y C u rre n t - I rr ( A )
25
1 0 ET F.. Se ries
T
J
= 1 5 0 °C
20
8 A
I
FM
= 10 A
12
2A
15
5A
2 A
8
1A
10
1A
4
5
0
0
40
80
120
1 60
20 0
R a t e O f F a ll O f Fo rw a rd C u rre n t - d i/ d t ( A / µs )
0
0
40
80
120
1 60
2 00
R a t e O f Fa ll O f F o r w a r d C u rre n t - d i/ d t ( A / µ s)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
T ran sie n t T h e rm al Im pe da n c e Z
thJ C
( ° C / W )
10
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
Stea dy Sta te V alue
(DC Op er ation)
1
D
D
D
D
D
=
=
=
=
=
0 .50
0 .33
0 .25
0 .17
0 .08
0 .1
0 .0 1
Sin gle Pulse
1 0E TF. . Series
0 .0 0 1
0. 001
0 .0 1
0 .1
Squa re W av e Pulse Du ration (s)
1
10
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
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参数对比
与10ETF10STRLPBF相近的元器件有:10ETF10SPBF、10ETF10STRRPBF、704-196-14E-LJ-S。描述及对比如下:
型号 10ETF10STRLPBF 10ETF10SPBF 10ETF10STRRPBF 704-196-14E-LJ-S
描述 Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, D2PAK-3 Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, D2PAK-3 PGA SOCKET,196 CONTACTS,14X14,0.1 ROW SPACING,PC TAIL TERMINAL
Reach Compliance Code compliant unknown compliant unknown
最高工作温度 150 °C 150 °C 150 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -55 °C
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
零件包装代码 TO-263 TO-263 TO-263 -
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 -
针数 3 3 3 -
Is Samacsys N N N -
其他特性 FREEWHEELING FREEWHEELING FREEWHEELING -
应用 FAST SOFT RECOVERY FAST SOFT RECOVERY FAST SOFT RECOVERY -
外壳连接 CATHODE CATHODE CATHODE -
配置 SINGLE SINGLE SINGLE -
二极管元件材料 SILICON SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 1.33 V 1.33 V 1.33 V -
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 -
JESD-609代码 e3 e3 e3 -
最大非重复峰值正向电流 185 A 185 A 185 A -
元件数量 1 1 1 -
相数 1 1 1 -
端子数量 2 2 2 -
最大输出电流 10 A 10 A 10 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
峰值回流温度(摄氏度) 260 NOT SPECIFIED 260 -
认证状态 Not Qualified Not Qualified Not Qualified -
最大重复峰值反向电压 1000 V 1000 V 1000 V -
最大反向电流 100 µA 100 µA 100 µA -
最大反向恢复时间 0.31 µs 0.31 µs 0.31 µs -
表面贴装 YES YES YES -
端子面层 MATTE TIN OVER NICKEL MATTE TIN MATTE TIN OVER NICKEL -
端子形式 GULL WING GULL WING GULL WING -
端子位置 SINGLE SINGLE SINGLE -
处于峰值回流温度下的最长时间 30 NOT SPECIFIED 30 -
Base Number Matches 1 1 1 -
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