Advanced Technical Information
IXKP 10N60C5M
I
D25
= 5.4 A
V
DSS
= 600 V
R
DS(on) max
= 0.385
Ω
CoolMOS Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Ultra low gate charge
G
D
TO-220 ABFP
G
D
S
S
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AS
E
AR
dV/dt
Symbol
T
C
= 25°C
T
C
= 90°C
single pulse
repetitive
I
D
= 3.4 A; T
C
= 25°C
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
5.4
3.7
225
0.3
50
V
V
A
A
mJ
mJ
V/ns
Features
• Fast CoolMOS power MOSFET - 4th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
• Fully isolated package
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
CoolMOS is a trademark of
Infineon Technologies AG.
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
350
2.5
T
VJ
= 25°C
T
VJ
= 125°C
3
tbd
100
790
38
17
4
6
tbd
tbd
tbd
tbd
3.95
22
max.
385
3.5
1
mΩ
V
µA
µA
nA
pF
pF
nC
nC
nC
ns
ns
ns
ns
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
V
GS
= 10 V; I
D
= 5.2 A
V
DS
= V
GS
; I
D
= 0.34 mA
V
DS
= 600 V; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 5.2 A
V
GS
= 10 V; V
DS
= 400 V
I
D
= 5.2 A; R
G
= 4.3
Ω
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0649
Advanced Technical Information
IXKP 10N60C5M
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
I
S
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0 V
I
F
= 5.2 A; V
GS
= 0 V
I
F
= 5.2 A; -di
F
/dt = 100 A/µs; V
R
= 400 V
0.9
260
21
24
typ.
max.
5.2
1.2
A
V
ns
µC
A
Component
Symbol
T
VJ
T
stg
M
d
Symbol
Conditions
operating
mounting torque
Conditions
Maximum Ratings
-40...+150
-40...+150
0.4 ... 0.6
°C
°C
Nm
Characteristic Values
min.
typ.
0.50
80
2
max.
K/W
K/W
g
R
thCH
R
thJA
Weight
with heatsink compound
thermal resistance junction - ambient
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0649
Advanced Technical Information
IXKP 10N60C5M
TO-220 ABFP Outline
ØP
E
A
A1
H
Q
D
L1
A2
L
b1
e
b
c
35
25
16
T
J
= 25°C
30
20 V
10 V
8V
7V
T
J
= 150°C
14
10 V
8V
7V
6V
5.5 V
20
25
V
GS
=
6V
12
V
GS
=
20 V
20
P
tot
[ W]
15
10
I
D
[A ]
I
D
[A ]
8
15
5.5 V
5V
10
6
5V
10
4.5 V
4
5
5
4.5 V
2
0
0
40
80
T
C
[°C]
120
160
0
0
5
10
15
20
0
0
5
10
15
20
V
DS
[V]
V
DS
[V]
Fig. 1 Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
0649
Advanced Technical Information
IXKP 10N60C5M
40
1.6
6V
6.5 V
7V
1.2
V
DS
=
5V
5.5 V
I
D
= 5.2 A
V
GS
= 10 V
1
V
DS
> 2·R
DS(on) max
· I
D
36
32
28
25 °C
1.2
T
JV
= 150°C
20 V
0.8
[Ω]
[Ω]
24
0.6
98 %
DS (on)
0.8
DS (on)
I
D
[A ]
20
16
150 °C
R
R
T
J
=
0.4
typ
12
0.4
0.2
8
4
0
0
5
10
15
20
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
I
D
[A]
T
j
[°C]
V
GS
[V]
Fig. 3 Typ. drain-source on-state
resistance characteristics of IGBT
10
2
Fig. 4 Drain-source on-state resistance
Fig. 5 Typ. transfer characteristics
10
10
5
I
D
= 5.2 A pulsed
9
8
10
4
V
GS
= 0 V
f = 1 MHz
10
1
T
J
=
150 °C
25 °C
150 °C, 98%
V
DS
=
120 V
7
6
400 V
10
3
Ciss
[V ]
V
GS
5
4
C [pF ]
10
2
I
F
[A ]
10
0
Coss
25 °C, 98%
3
2
1
10
1
Crss
10
-1
0
0
0.5
1
1.5
2
10
0
0
5
10
15
20
0
50
100
150
200
V
SD
[V]
Q
gate
[nC]
V
DS
[V]
Fig. 6 Forward characteristic
of reverse diode
250
Fig. 7
Typ. gate charge
Fig. 8 Typ. capacitances
700
I
D
= 3.4 A
I
D
= 0.25 mA
200
660
[m J ]
B R (DS S )
[V ]
620
150
E
AS
100
V
580
540
20
60
100
140
180
50
0
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Fig. 9 Avalanche energy
Fig. 10 Drain-source breakdown voltage
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IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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