UNISONIC TECHNOLOGIES CO., LTD
10NN15
Preliminary
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC
10NN15
is a Dual N-channel enhancement mode power
MOSFET using UTC’s perfect technology to provide customers with
fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
SOP-8
FEATURES
* High switching speed
* Low Gate Charge
* Simple Drive Requirement
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10NN15L-S08-R
10NN15G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8
S: Source
1
S1
Pin Assignment
2
3
4 5, 6 7, 8
G1 S2 G2 D2 D1
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011Unisonic Technologies Co., Ltd
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10NN15
PIN CONFIGURATION
Preliminary
Power MOSFET
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www.unisonic.com.tw
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10NN15
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
150
V
Gate-Source Voltage
V
GSS
±20
V
Continuous (Note 3)
I
D
3
A
Drain Current
12
A
Pulsed (Note 2)
I
DM
Power Dissipation
P
D
2
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θ
JA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=150V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=120V, I
D
=3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DS
=75V, V
GS
=10V, I
D
=3A,
R
G
=3.3Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=3A, V
GS
=0V, dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse width
≤
300µs, duty cycle
≤
2% .
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
150
V
10
µA
+100 nA
-100 nA
4
400
420
60
40
10
2
4
6.5
7
14
35
672
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
µC
2
16
1.3
40
75
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www.unisonic.com.tw
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10NN15
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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微控制器 MCU
