HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC463LH250 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C
3
I
• Test Instrumentation
• Fiber Optics
Features
50 Ohm Matched Input/Output
Hermetic SMT Package
Gain: 14 dB
Noise Figure: 2.5 dB @ Mid-Band
P1dB Output Power: +18 dBm @ Mid-Band
Supply Voltage: +5V @ 60mA
Screening to MIL-PRF-38535 (Class B or S) Available
Functional Diagram
General Description
The HMC463LH250 is a GaAs MMIC pHEMT Low
Noise AGC Distributed Amplifier packaged in a
hermetic surface mount package which operates
between 2 and 20 GHz. The amplifier provides 13
dB of gain, 3 dB noise figure and 18 dBm of output
power at 1 dB gain compression while requiring only
60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 2 - 14 GHz making the HMC463LH250
ideal for EW, ECM RADAR, test equipment and
High-Reliability applications. The HMC463LH250
LNA I/Os are internally matched to 50 Ohms and are
internally DC blocked.
Electrical Specifi cations,
T
A
= +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)
16
11.5
Min.
Typ.
2.0 - 6.0
14.5
±0.25
0.010
3.5
15
11
19
21.5
29
60
80
13
5.5
9
Max.
Min.
Typ.
6.0 - 16.0
12
±0.5
0.010
2.5
15
15
18
20.5
27
60
80
10
4.5
8
Max.
Min.
Typ.
16.0 - 20.0
11
±0.9
0.010
4
9
7
13
19
24
60
80
5.5
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
7
AMPLIFIERS - LOW NOISE - SMT
7-2
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
+25C
+85C
-40C
RETURN LOSS (dB)
+25C
+85C
-40C
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-10
-20
-30
-40
-50
-60
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature
26
Psat vs. Temperature
26
22
P1dB (dBm)
Psat (dBm)
22
18
18
+25C
+85C
-40C
14
+25C
+85C
-40C
14
10
10
6
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
6
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output IP3 vs. Temperature
32
30
28
26
IP3 (dBm)
24
22
20
18
16
14
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
24
GAIN (dB), P1dB (dBm), Psat (dBm)
22
20
18
16
14
12
10
8
6
4.5
5
Vdd (V)
GAIN
P1dB
Psat
4.5
4
3.5
NOISE FIGURE (dB)
3
2.5
2
1.5
1
NF
0.5
0
5.5
Gain, P1dB & Output IP3
vs. Control Voltage @ 10 GHz
32
GAIN (dB), P1dB (dBm), IP3 (dBm)
28
Noise Figure & Supply Current
vs. Control Voltage @ 10 GHz
80
70
6
5
NOISE FIGURE (dB)
4
3
2
1
0
0
0.2 0.4 0.6 0.8
1
24
20
16
12
8
4
0
-4
-1.2
20
-1
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
Vgg2 (V)
GAIN
P1dB
IP3
60
Idd (mA)
50
40
30
Vgg2 (V)
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Gain @ Several Control Voltages
18
14
10
GAIN (dB)
6
2
-2
-6
-10
-14
0
2
4
Vgg2=-1.3 V
Vgg2=-1.2 V
Vgg2=-1.1 V
Vgg2=-1.0 V
Vgg2=-0.9 V
Vgg2=-0.8 V
Vgg2=-0.6 V
Vgg2=-0.4 V
Vgg2=-0.2 V
Vgg2=0 V
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Current (Igg1)
Gate Bias Voltage (Vgg2)(AGC)
RF Input Power (RFIN)(Vdd = +5 V)
Channel Temperature
Storage Temperature
Operating Temperature
+9 V
-2 to 0 Vdc
2.5 mA
(Vdd -9)
Vdc to +2 Vdc
+18 dBm
175 °C
-65 to +150 °C
-40 to +85 °C
7
AMPLIFIERS - LOW NOISE - SMT
7-4
6
8
10
12
14
16
18
20
22
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
Idd (mA)
58
60
62
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
+5.0
+5.5
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR
2. LEAD AND GROUND PADDLE PLATING: GOLD 40-80 MICROINCHES.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PAD BURR LENGTH 0.15mm MAX. PAD BURR HEIGHT 0.25mm MAX.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC463LH250
v04.1010
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Pin Descriptions
Pin Number
1, 2, 4, 5,
7, 8, 10
Function
GND
Description
Ground paddle must be connected to RF/DC ground.
Interface Schematic
3
RFIN
This pad is AC coupled
and matched to 50 Ohms.
6
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
9
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
11
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
12
Vgg2
Optional gate control if AGC is required.
Leave Vgg2 open circuited if AGC is not required.
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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