High value, low leakage and small size are difficult parameters to obtain
in capacitors for high voltage systems. AVX special high voltage MLC
chips capacitors meet these performance characteristics and are
designed for applications such as snubbers in high frequency power
converters, resonators in SMPS, and high voltage coupling/DC blocking.
These high voltage chip designs exhibit low ESRs at high frequencies.
To make high voltage chips, larger physical sizes than are normally
encountered are necessary. These larger sizes require that special pre-
cautions be taken in applying these chips in surface mount assemblies.
In response to this, and to follow from the success of the FLEXITERM
®
range of low voltage parts, AVX is delighted to offer a FLEXITERM
®
high
voltage range of capacitors, FLEXITERM
®
.
The FLEXITERM
®
layer is designed to enhance the mechanical flexure
and temperature cycling performance of a standard ceramic capacitor,
giving customers a solution where board flexure or temperature cycle
damage are concerns.
HOW TO ORDER
1808
AVX
Style
0805
1206
1210
1808
1812
1825
2220
2225
***
A
Voltage
600V/630V =
1000V =
1500V =
2000V =
2500V =
3000V =
4000V =
5000V =
C
A
S
G
W
H
J
K
C
272
K
A
Z
1
A
Temperature Capacitance Code Capacitance
Test Level
Termination*
Coefficient
(2 significant digits
Tolerance
A = Standard Z = FLEXITERM
®
C0G: J = ±5%
100% Tin
C0G = A
+ no. of zeros)
(RoHS Compliant)
K = ±10%
X7R = C
Examples:
X = FLEXITERM
®
M = ±20%
10 pF = 100
5% min. Pb
100 pF = 101 X7R: K = ±10%
M = ±20%
1,000 pF = 102
Z = +80%,
22,000 pF = 223
-20%
220,000 pF = 224
1 µF = 105
Packaging
Special
1 = 7" Reel
Code
3 = 13" Reel A = Standard
9 = Bulk
Notes: Capacitors with X7R dielectrics are not intended for applications across AC supply mains or AC line filtering with polarity reversal. Contact plant for recommendations.
Contact factory for availability of Termination and Tolerance options for Specific Part Numbers.
***
AVX offers nonstandard chip sizes. Contact factory for details.
中国电科（CETC）第五十五研究所（NEDI）微信公众号4月12日报道，该所重点实验室张凯博士发表在国际半导体器件权威期刊《IEEE Electron DeviceLetters》上的论文《High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications》即《三维鳍式GaN高线性微波功率器件》被国际半导体行业著名杂志《Semico...[详细]
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