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12CWQ10FNTRRPBF

Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-252AA
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY, FREE WHEELING DIODE
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.68 V
JEDEC-95代码
TO-252AA
JESD-30 代码
R-PSSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
330 A
元件数量
2
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
6 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向电流
1000 µA
表面贴装
YES
技术
SCHOTTKY
端子面层
MATTE TIN OVER NICKEL
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin PD-20548 rev. F 01/03
12CWQ10FN
SCHOTTKY RECTIFIER
12 Amp
D-Pak (TO-252AA)
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 6 Apk, T
J
= 125°C
(per leg)
range
- 55 to 150
°C
12CWQ10FN
12
100
330
0.65
Description/ Features
Units
A
V
A
V
The 12CWQ10FN surface mount, center tap, Schottky rectifier
series has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications are
in disk drives, switching power supplies, converters, free-
wheeling diodes, battery charging, and reverse battery
protection.
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
2.38 (0.09)
6.73 (0.26)
6.35 (0.25)
5.46 (0.21)
5.21 (0.20)
4
2.19 (0.08)
1.14 (0.04)
0.89 (0.03)
0.58 (0.02)
0.46 (0.02)
MINIMUM RECOMMENDED FOOTPRINT
5.97 (0.24)
1.27 (0.05)
0.88 (0.03)
6.45 (0.24)
6.22 (0.24)
1.64 (0.02)
1
2
3
5.68 (0.22)
10.42 (0.41)
9.40 (0.37)
0.51 (0.02)
MIN.
6.48 (0.26)
10.67 (0.42)
5.97 (0.23)
1.52 (0.06)
1.15 (0.04)
2x
1.14 (0.04)
0.76 (0.03)
2.28 (0.09)
2x
4.57 (0.18)
1 - Anode
2 - Cathode
3 - Anode
4 - Cathode
3x
0.89 (0.03)
0.64 (0.02)
2x
2.54 (0.10)
1.65 (0.06)
2x
2.28 (0.09)
2x
Base
Common
Cathode
4
0.58 (0.02)
0.46 (0.02)
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches)
Anode
2
Common
1 Cathode
3
Anode
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1
12CWQ10FN
Bulletin PD-20548 rev. F 01/03
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
100
V
RWM
Max. Working Peak Reverse Voltage (V)
12CWQ10FN
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward
Current * See Fig. 5
I
FSM
E
AS
I
AR
(Per Leg)
(Per Device)
12CWQ... Units
6
12
330
110
6
1
A
mJ
A
A
Conditions
50% duty cycle @ T
C
= 135°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
Max.PeakOneCycleNon-Repetitive
Surge Current * See Fig. 7(Per Leg)
Non-Repetit. AvalancheEnergy(PerLeg)
RepetitiveAvalancheCurrent(PerLeg)
T
J
= 25 °C, I
AS
= 1 Amps, L = 12 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) * See Fig. 1
(1)
12CWQ... Units
0.80
0.95
0.65
0.78
1
4
0.47
20.68
183
5.0
V
V
V
V
mA
mA
V
mΩ
Conditions
@ 6A
@ 12A
@ 6A
@ 12A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current
(Per Leg) * See Fig. 2
(1)
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Typ. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
pF
nH
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
12CWQ... Units
-55 to 150
-55 to 150
3.0
1.5
0.3 (0.01)
g (oz.)
°C
°C
Conditions
R
thJC
Max. Thermal Resistance (Per Leg)
Junction to Case
wt
Approximate Weight
Case Style
(*) dPtot
dTj
<
1
Rth( j-a)
°C/W DC operation
* See Fig. 4
(PerDevice)
D-Pak
Similar to TO-252AA
thermal runaway condition for a diode on its own heatsink
2
www.irf.com
12CWQ10FN
Bulletin PD-20548 rev. F 01/03
1000
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 150°C
125°C
100°C
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
100
Reverse Current - I
R
(mA)
0
10 20 30 40 50 60 70 80 90 100
Reverse Voltage - V
R
(V)
T
J
= 150°C
T
J
= 125°C
10
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
1000
Junction Capacitance - C
T
(pF)
T
J
= 25°C
T
J
= 25°C
100
1
0
0.5
1
1.5
2
2.5
3
3.5
10
0
20
40
60
80
100
Forward Voltage Drop - V
FM
(V)
Reverse Voltage - V
R
(V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
10
Thermal Impedance Z
thJC
(°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
0.1
Notes:
Single Pulse
(Thermal Resistance)
0.01
0.00001
0.0001
0.001
0.01
t1
t2
1. Duty factor D = t 1/ t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
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3
12CWQ10FN
Bulletin PD-20548 rev. F 01/03
150
Allowable Case Temperature - (°C)
Average Power Loss - (Watts)
145
DC
140
135
130
125
see note (2)
6
5
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
Square wave (D = 0.50)
80% Rated V
R
applied
120
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (Per Leg)
Non-Repetitive Surge Current - I
FSM
(A)
1000
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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12CWQ10FN
Bulletin PD-20548 rev. F 01/03
Marking Information
EXAMPLE: THIS IS AN 12CWQ10FN
INTERNATIONAL
RECTIFIER LOGO
4 (K)
PART NUMBER
12CWQ10FN
712A
5K3A
ASSEMBLY
LOT CODE
2 (K)
DATE CODE (YWWA)
Y
= YEAR
W W = WEEK
A
= LINE
1 (A)
3 (A)
Tape & Reel Information
4.1 (0.16)
3.9 (0.15)
2.1 (0.83)
1.9 (0.07)
1.85 (0.07)
DIA.
1.65 (0.06)
1.85 (0.07)
1.65 (0.06)
7.6 (0.30)
7.4 (0.29)
2.6 (0.10)
DIA.
1.5 (0.06)
0.35 (0.01)
0.25 (0.01)
TR
7.0 (0.28)
6.8 (0.26)
2.75 (0.11)
2.55 (0.10)
16.3 (0.64)
15.7 (0.62)
FEED DIRECTION
12.1 (0.48)
11.9 (0.47)
4.1 (0.16)
3.9 (0.15)
TRR
2.1 (0.83)
1.9 (0.07)
1.85 (0.07)
DIA.
1.65 (0.06)
1.85 (0.07)
1.65 (0.06)
7.6 (0.30)
7.4 (0.29)
0.35 (0.01)
0.25 (0.01)
10.6 (0.42)
10.4 (0.41)
2.75 (0.11)
2.55 (0.10)
16.3 (0.64)
15.7 (0.62)
FEED DIRECTION
8.1 (0.32)
7.9 (0.31)
2.6 (0.10)
DIA.
1.5 (0.06)
4.1 (0.16)
3.9 (0.15)
TRL
2.1 (0.83)
1.9 (0.07)
1.85 (0.07)
DIA.
1.65 (0.06)
1.85 (0.07)
1.65 (0.06)
7.6 (0.30)
7.4 (0.29)
0.35 (0.01)
0.25 (0.01)
10.6 (0.42)
10.4 (0.41)
2.75 (0.11)
2.55 (0.10)
16.3 (0.64)
15.7 (0.62)
FEED DIRECTION
8.1 (0.32)
7.9 (0.31)
2.6 (0.10)
DIA.
1.5 (0.06)
13 (0.52) DIA.
22.4 (0.88)
TO-252AA Tape & Reel
When ordering, indicate the part
number, part orientation, and the
quantity. Quantities are in multiples
of 2,000 pieces per reel for TR and
multiples of 3,000 pieces per reel
for both TRL and TRR.
375 (14.17)
DIA. MAX.
50 (1.97) DIA.
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参数对比
与12CWQ10FNTRRPBF相近的元器件有:12CWQ10FNTRLPBF、055U1R6B251PW-A。描述及对比如下:
型号 12CWQ10FNTRRPBF 12CWQ10FNTRLPBF 055U1R6B251PW-A
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 100V V(RRM), Silicon, TO-252AA, SIMILAR TO TO-252AA, DPAK-3 Ceramic Capacitor, Multilayer, Ceramic, 250V, 6.25% +Tol, 6.25% -Tol, NP0, -/+30ppm/Cel TC, 0.0000016uF, 0606,
是否Rohs认证 符合 符合 符合
包装说明 R-PSSO-G2 R-PSSO-G2 , 0606
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
JESD-609代码 e3 e3 e4
端子数量 2 2 2
最高工作温度 175 °C 175 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装形式 SMALL OUTLINE SMALL OUTLINE SMT
端子面层 MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL Palladium/Silver (Pd/Ag)
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) -
零件包装代码 TO-252AA TO-252AA -
针数 3 3 -
Is Samacsys N N -
其他特性 HIGH RELIABILITY, FREE WHEELING DIODE HIGH RELIABILITY, FREE WHEELING DIODE -
应用 GENERAL PURPOSE GENERAL PURPOSE -
外壳连接 CATHODE CATHODE -
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS -
二极管元件材料 SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 0.68 V 0.68 V -
JEDEC-95代码 TO-252AA TO-252AA -
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 -
湿度敏感等级 1 1 -
最大非重复峰值正向电流 330 A 330 A -
元件数量 2 2 -
相数 1 1 -
最大输出电流 6 A 6 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR -
峰值回流温度(摄氏度) 260 260 -
认证状态 Not Qualified Not Qualified -
最大重复峰值反向电压 100 V 100 V -
最大反向电流 1000 µA 1000 µA -
表面贴装 YES YES -
技术 SCHOTTKY SCHOTTKY -
端子形式 GULL WING GULL WING -
端子位置 SINGLE SINGLE -
处于峰值回流温度下的最长时间 30 30 -
Base Number Matches 1 1 -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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