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12FLR80S02

Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
DO-4, 1 PIN
Reach Compliance Code
compliant
Is Samacsys
N
其他特性
FREE WHEELING DIODE
应用
FAST RECOVERY
外壳连接
ANODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-203AA
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
1
最大输出电流
12 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
800 V
最大反向恢复时间
0.2 µs
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
Bulletin PD-2.030 revG
01/05
1N3879(R), 1N3889(R)
6/ 12/ 16FL(R) SERIES
FAST RECOVERY DIODES
Stud Version
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
= 100°C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
t
rr
T
J
range
range
1N3879- 1N3889-
1N3883 1N3893
6FL 12FL 16FL Units
6
9.5
110
115
60
55
12
19
145
150
103
94
16
25
180
190
160
150
A
A
A
A
A
2
s
A
2
s
I
2
√s
V
ns
°C
Description
This range of fast recovery diodes is
designed for applications in DC power
supplies, inverters, converters, choppers,
ultrasonic systems and for use as a free
wheeling diode.
6*
9.5
72
75 *
26
23
363
12 *
19
145
150 *
103
94
856
Features
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Standard JEDEC types
Stud cathode and stud anode versions
Fully characterised reverse recovery conditions
1452 1452 2290
50 to 1000
50 to 400 *
see table
- 65 to 150
* JEDEC registred values.
case style
DO-203AA (DO-4)
www.irf.com
1
1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
1N3879.
1N3880.
1N3881.
1N3882.
1N3883.
1N3889.
1N3890.
1N3891.
1N3892.
1N3893.
-
-
-
-
-
5
10
6FL..
12FL..
16FL..
20
40
60
80
100
-
Voltage
V
RRM
max. repetitive
Code peak and off-state voltage
V
50
100
200
300
400
50
100
200
300
400
50
100
200
400
600
800
1000
V
RSM
, maximum non- I
RRM
max. I
RRM
max. I
RRM
max.
repetitive peak voltage T
J
= 25°C T
J
= 100°C T
J
= 150°C
V
µA
mA
mA
75
150
250
350
450
75
150
250
350
450
75
150
275
500
725
950
1250
50
-
6.0
25 *
3.0 *
5.0 *
15 *
1.0 *
3.0 *
12
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ TC = 100°C
I
F(RMS)
Max. RMS current
I
FSM
Max. peak, one-cycle
non-repetitive forward current
1N3879.
1N3883.
6FL..
1N3889.
1N3893. 16FL.. Units Conditions
12FL..
12 *
19
170
180
145
150 *
145
6*
9.5
85
90
72
75 *
6
9.5
130
135
110
115
86
78
60
55
856
1.4
1.5
16
25
215
225
180
190
230
A
A
180° conduction, half sine wave.
DC
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% V
RRM
t = 8.3ms reapplied
t = 10ms No voltage
Sinusoidal half wave
Initial T
J
= 150°C
2222222222222
I
2
t
Maximum I
2
t for fusing
36
33
26
23
130
103
94
1452
1.4 *
1.5 *
210
160
150
2290
1.4
1.5
A
2
s
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
I
2
√t
V
FM
Maximum I
2
√t
for fusing
Max. forward voltage
363
1.4 *
1.5 *
A
2
√s
V
t = 0.1 to 10ms, no voltage reapplied
T
J
= 25°C, I
F
= rated I
F(AV)
(D.C.)
T
C
= 100°C, I
FM
=
π
x rated I
F(AV)
* JEDEC registered value
2
1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series
Recovery Characteristics
Parameter
1N3879. 1N3889.
1N3883. 1N3893.
6FL..
12FL.. Units Conditions
16FL..
S02 S05
...
...
ns
---
...
...
nC
T
J
= 25°C, I
F
= 1A to V
R
= 30V, dI
F
/dt = 100A/µs
T
J
= 25°C, dI
F
/dt = 25A/µs, I
FM
= p x rated I
F(AV)
I
FM
= p x rated I
F(AV)
T
J
= 25°C, I
F
= 1A to V
R
= 30V, dI
F
/dt = 100A/µs
T
J
= 25°C, dI
F
/dt = 25A/µs, I
FM
= p x rated I
F(AV)
200 500
...
...
...
t
rr
Max. reverse recovery time
150
300 *
150
300 *
5*
350
400
I
RM(REC)
Max. peak recovery current
Q
RR
Max. reverse
recovered charge
* JEDEC registered value
4*
400
400
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. junction operating
temperature range
Max. storage temperature
range
2.5
1N3879. 1N3889.
1N3883. 1N3893.
6FL..
12FL..
-65 to 150
Units Conditions
16FL..
23
°C
-65 to 175
2.0
0.5
1.5
+0-10%
13
1.2
+0-10%
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Allowable mounting
torque
1.6
C/W
DC operation
Mounting surface, smooth, flat and greased
Nm
lbf.in
Nm
lbf.in
g (oz)
JEDEC
Lubricated threads
Not lubricated threads
10
wt
Approximate weight
Case style
7 (0.25)
DO-203AA(DO-4)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
1N3879.
1N3883.
6FL..
Conduction angle
180°
120°
60°
30°
0.58
0.60
1.28
2.20
1N3889.
1N3893.
12FL..
0.46
0.48
1.02
1.76
16FL..
0.37
0.39
0.82
1.41
1N3879.
1N3883.
6FL..
0.33
0.58
1.28
2.20
1N3889.
1N3893.
12FL..
0.26
0.46
1.02
1.76
16FL..
Units
Conditions
0.21
0.37
0.82
1.41
K/W
T
J
= 150°C
Sinusoidal conduction
Rectangular conduction
3
1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series
Ordering Information Table
Device Code
A
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Omit = Standard or Fast Recovery Diode
A
F
L
R
= Avalanche Diode
= Diode
= Only for Fast Diode
=
Stud Reverse Polarity
Current Code I
(AVG)
= Exact Current Rating
Omit =
Standard Recovery Diode
Omit =
Stud Forward Polarity
16
2
F
3
L
4
R
5
60
6
M
7
S02
8
12
Voltage code: Code x 10 = V
RRM
(see Voltage Ratings table)
Outlines:
Omit =
Stud Base UNF Thread
M
=
Stud Base Metric Thread
8
-7 t
rr
code only for Fast Diode (see Recovery Characteristics table)
Outline Table
2222222222222
Conforms to JEDEC DO-203AA (DO-4)
All dimensions in millimeters
4
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JlltIECTIPil.JIIt
1N3879. 1N3889, 6FL, 12Ft. 16Ft Serim
1
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