150U/150UR
SILICON POWER DIODE
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
I
F
V
FM
I
FSM
I
FRM
I
2
t
Maximum Average Forward
Current Te=125
0
C
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current
Maximum I
2
t rating (non-rep.) for
5 to 10 msec.
150A
1.4V
3000A
750A
45,000 A2 Sec
NAINA
THERMAL MECHANICAL SPECIFICATIONS
θ
JC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0.25
0
C/W
-65
0
C to 150
0
C
-65
0
C to 200
0
C
2.0 M-kg min,
3.0 M-kg max
150 gms.
ELECTRICAL RATINGS
TYPE
V
RRM
150U/150UR
Max. repetitive peak reverse
voltage (v)
V
R
(RMS)
V
R
Max. R.M.S. reverse voltage (V)
Max. D.C. Blocking Voltage (V)
10
100
70
100
20
200
140
200
40
400
280
400
60
600
420
600
80
800
560
800
100
1000
700
1000
120
1200
840
1200
140
160
1400 1600
980
1120
1400 1600
560
200
640
200
I
R
(AV)
Recommended R.M.S. working
40
80
160 240
320
400
480
Voltage(v)
Max. Average reverse leakage
200
200 200 200
200
200
200
current @ VRRM Tc 25
0
C (uA)
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site: www.nainasemi.com
微控制器 MCU