首页 > 器件类别 > 分立半导体 > 二极管

15JGQ100SCSB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
HERMETIC SEALED PACKAGE-3
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
HIGH RELIABILITY, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-254AA
JESD-30 代码
S-XSFM-P3
JESD-609代码
e0
最大非重复峰值正向电流
175 A
元件数量
2
相数
1
端子数量
3
最大输出电流
35 A
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
MIL-19500
最大重复峰值反向电压
100 V
表面贴装
NO
技术
SCHOTTKY
端子面层
TIN LEAD
端子形式
PIN/PEG
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
PD-97558A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
15JGQ100
JANS1N7043CAT1
JANTX1N7043CAT1
JANTXV1N7043CAT1
35Amp, 100V
Ref: MIL-PRF-19500/730
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half-sine
(Per Leg)
V
F
@ 15Apk, T
J
= 125°C
(Per Leg)
1N7043CAT1 Units
35
100
175
0.85
A
V
A
V
°C
Description / Features
The 1N7043CAT1 center tap Schottky rectifier has
been expressly designed to meet the rigorous
requirements of high reliability environments. It is
packaged in the hermetic isolated TO-254AA
package. The device's forward voltage drop and
reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical
high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500
quality conformance testing is available on source
control drawings to TX, TXV and S quality levels.
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long
Term Reliability
• Lightweight
• ESD Rating: Class 3A per MIL-STD-750, Method 1020
13.84 [.545]
13.59 [.535]
0.12 [.005]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
T
J
, T
stg
Operating and storage
-65 to 150
CASE STYLE
3.78 [.149]
3.53 [.139]
A
17.40 [.685]
16.89 [.665]
1
2
3
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
B
C
14.48 [.570]
12.95 [.510]
0.84 [.033]
MAX.
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3.81 [.150]
( ISOLATED BASE )
NOTES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ].
CONTROLLING DIMENS ION: INCH.
CONFORMS T O JEDEC OUT LINE TO-254AA.
1
CATHODE
2
3
COMMON CATHODE
ANODE
Case Outline and Dimensions - TO-254AA
www.irf.com
1
10/05/12
15JGQ100, 1N7043CAT1
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V) (Per Leg)
V
RWM
Max. Working Peak Reverse Voltage (V) (Per Leg)
1N7043CAT1
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current (Per Leg)
175
A
@ t
p
= 8.3 ms half-sine
Limits
35
Units
A
Conditions
50% duty cycle @ T
C
= 84°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) See Fig. 1
Limits
1.84
0.95
1.30
1.2
Units
V
V
V
V
mA
mA
pF
nH
@ 35A
@ 15A
@ 35A
@ 35A
T
J
= 25°C
T
J
= 125°C
Condition
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
(Per Leg) See Fig. 2

Max. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
0.5
15
600
6.7
V
R
= 5V
DC
( 1MHz, 25°C )
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case (Per Leg)
R
thJC
Max. Thermal Resistance, Junction
to Case (Per Package)
wt
Weight (Typical)
Die Size (Typical)
Case Style

Pulse Width < 300µs, Duty Cycle < 2%
9.3
125X125
g
mils
1.15
°C/W
DC operation
Limits Units
-65 to 150
-65 to 150
2.30
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
TO-254AA
2
www.irf.com
15JGQ100, 1N7043CAT1
100
10
1
0.1
0.01
0.001
0.0001
Instantaneous Forward Current - I F (A)
T
J
= 175°C
150°C
125°C
75°C
50°C
100
Reverse Current - I
R
(mA)
25°C
A
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage (Per Leg)
10
Tj = 125°C
Tj = 25°C
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward Voltage Drop - V F (V)
Fig. 1 - Typical Forward Voltage Drop
Characteristics (Per Leg)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
www.irf.com
3
15JGQ100, 1N7043CAT1
10
Thermal Response ( Z thJC )
1
D = 0.4
D = 0.3
D = 0.2
D = 0.1
D = 0.5
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
160
Allowable Case Temperature - (°C)
140
120
100
80
60
40
20
0
0
5
10
15
DC
R
thJC (DC) = 1.15°C/W
80 % Square Wave (D=0.50)
Rated V R applied
20
25
30
35
40
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current (Per Package)
4
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
www.irf.com
查看更多>
参数对比
与15JGQ100SCSB相近的元器件有:15JGQ100、15JGQ100SCS。描述及对比如下:
型号 15JGQ100SCSB 15JGQ100 15JGQ100SCS
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3 Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMETIC SEALED PACKAGE-3
是否Rohs认证 不符合 不符合 不符合
包装说明 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3 HERMETIC SEALED PACKAGE-3
Reach Compliance Code compli compli compli
ECCN代码 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED
配置 COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-254AA TO-254AA TO-254AA
JESD-30 代码 S-XSFM-P3 S-XSFM-P3 S-XSFM-P3
JESD-609代码 e0 e0 e0
最大非重复峰值正向电流 175 A 175 A 175 A
元件数量 2 2 2
相数 1 1 1
端子数量 3 3 3
最大输出电流 35 A 35 A 35 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 100 V 100 V 100 V
表面贴装 NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1
参考标准 MIL-19500 - MIL-19500
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消