11.0-19.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
15MPA0566
Chip Device Layout
Features
Compact, Low Cost Design
20.0 dB Small Signal Gain
+27.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
MMIC power amplifier has a small signal gain of
20.0 dB with a +27.0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.15
µm
GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
pr
o
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (ΔS21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Supply Current (Id) (Vd=5.0V, Vg=-0.9V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
11.0
-
-
-
-
-
-
-
-1.0
-
Typ.
-
12.0
8.0
20.0
+/-1.0
40.0
+27.0
+5.0
-0.9
380
Max.
19.0
-
-
-
-
-
-
+8.0
0.1
420
Pr
e-
du
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
ct
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
io
n
+9.0 VDC
500 mA
+0.3 VDC
+17.0 dBm
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
Page 1 of 6
11.0-19.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
15MPA0566
Power Amplifier Measurements
Small Signal Parameters
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
5
7
9
11
S11
S21
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19
-20
DB(|S(1,1)|)
All S ources
S22
S11
13
15
17
Fr equency ( G Hz)
19
21
23
25
ct
S12
15
16
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency ( G Hz)
io
n
18
19
pr
o
DB(|S(2,2)|)
All S ources
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
0
2
4
6
0
-10
-20
-30
-40
-50
-60
-70
0
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency ( G Hz)
S22
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
2
4
6
e-
15MP A0566: Pout (d Bm) v s . f req ( GHz ) Vgs= -0.5 Vds =5 V Pin = +10 dBm
30
28
26
24
22
20
Pr
Pout (d Bm)
18
16
14
12
10
8
6
4
2
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency ( G Hz)
0
11
12
13
14
17
20
du
2
4
6
S21
DB(|S(2,1)|)
All S ources
DB(|S(1,2)|)
All S ources
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Fr equency ( G Hz)
freq (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
15MPA0566
0.600
(0.023)
1.000
(0.039)
Mechanical Drawing
1.100
(0.043)
2
3
0.731
(0.028)
1
4
5
0.0
0.659
(0.026)
du
0.0
1.400
(0.055)
(Note: Engineering designator is 15MPA0566)
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
pr
o
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.810 mg.
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg)
Vd1,2
e-
Bias Arrangement
Bypass Capacitors
- See App Note [2]
1
RF In
Pr
2
3
4
RF Out
5
Vg
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
ct
0.294
(0.012)
io
n
11.0-19.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
15MPA0566
App Note [1] Biasing
-
It is recommended to bias each amplifier stage Vd(1,2)=5.0V with Id=380mA. It is also recommended to use
active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.9V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
All the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also
recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
C/W
C/W
C/W
du
E+
E+
E+
Pr
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
e-
pr
o
Bias Conditions:
Vd1=Vd2=5.0V, Id=380 mA
ct
FITs
E+
E+
E+
MTTF Tables
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
io
n
Page 4 of 6
11.0-19.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
15MPA0566
Device Schematic
Pr
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
e-
pr
o
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
du
ct
io
n
